BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949588
DESIGN SUPPORT TOOLS
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APPLICATIONS
Models
• Switched mode power supplies
Available
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
• High-frequency inverter circuits
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYM36E-TR
BYM36E-TAP
2500 per 10" tape and reel
2500 per ammopack
12 500
12 500
PART
TYPE DIFFERENTIATION
PACKAGE
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
VR = 200 V; IF(AV) = 3 A
VR = 400 V; IF(AV) = 3 A
VR = 600 V; IF(AV) = 3 A
VR = 800 V; IF(AV) = 2.9 A
VR = 1000 V; IF(AV) = 2.9 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
BYM36E
BYM36E
PARTS TABLE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
= repetitive peak reverse voltage
Peak forward surge current
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IF(AV)
IF(AV)
IF(AV)
IF(AV)
IF(AV)
ER
Tj = Tstg
200
400
600
800
1000
65
3
3
3
2.9
2.9
20
-55 to +175
V
V
V
V
V
A
A
A
A
A
A
mJ
°C
tp = 10 ms, half sine wave
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
I(BR)R = 1 A, inductive load
Rev. 1.8, 21-Feb-18
Document Number: 86012
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
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Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
RthJA
25
70
K/W
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 3 A
Forward voltage
IF = 3 A, Tj= 175 °C
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
BYM36A
VF
-
-
1.6
V
BYM36B
VF
-
-
1.6
V
BYM36C
VF
-
-
1.6
V
BYM36D
VF
-
-
1.78
V
BYM36E
VF
-
-
1.78
V
BYM36A
VF
-
-
1.22
V
BYM36B
VF
-
-
1.22
V
BYM36C
VF
-
-
1.22
V
BYM36D
VF
-
-
1.28
V
BYM36E
VF
-
-
1.28
V
IR
-
-
5
μA
VR = VRRM
Reverse current
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Reverse recovery time
IR = 100 μA
Reverse breakdown voltage
IR
-
-
100
μA
BYM36A
trr
-
-
100
ns
BYM36B
trr
-
-
100
ns
BYM36C
trr
-
-
100
ns
BYM36D
trr
-
-
150
ns
BYM36E
trr
-
-
150
ns
BYM36A
V(BR)R
300
-
-
V
BYM36B
V(BR)R
500
-
-
V
BYM36C
V(BR)R
700
-
-
V
BYM36D
V(BR)R
900
-
-
V
BYM36E
V(BR)R
1100
-
-
V
4
600
RthJA = 25 K/W
500
1000 V
RthJA = 70 K/W
400
800 V
300
600 V
200
400 V
100
200 V
0
IFAV - Average Forward Current (A)
PR - Max. Reverse Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
BYM36A, BYM36B, BYM36C
3
RthJA = 25 K/W
2
RthJA = 70 K/W
1
VR = VRRM
half sinewave
0
0
959705
40
80
120
160
200
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
0
959706
40
80
120
160
200
Tamb - Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Rev. 1.8, 21-Feb-18
Document Number: 86012
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
100
BYM36D, BYM36E
IF - Forward Current (A)
IFAV - Average Forward Current (A)
4
3
RthJA = 25 K/W
2
RthJA = 70 K/W
1
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
VR = VRRM
half sinewave
BYM36D, BYM36E
0.001
0
0
40
80
120
160
0
200
Tamb - Ambient Temperature (°C)
959707
959709
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1
2
3
4
VF - Forward Voltage (V)
Fig. 6 - Max. Forward Current vs. Forward Voltage
1000
90
CD - Diode Capacitance (pF)
IR - Reverse Current (μA)
10
100
10
VR = VRRM
1
70
60
50
40
30
20
10
0
0.1
0.1
0
40
80
120
160
200
Tj - Junction Temperature (°C)
959704
16302
Fig. 4 - Max. Reverse Current vs. Junction Temperature
f = 1 MHz
80
1
10
100
VR - Reverse Voltage (V)
Fig. 7 - Diode Capacitance vs. Reverse Voltage
IF - Forward Current (A)
100
10
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
BYM36A, BYM36B, BYM36C
0.001
0
959708
1
2
3
4
VF - Forward Voltage (V)
Fig. 5 - Max. Forward Current vs. Forward Voltage
Rev. 1.8, 21-Feb-18
Document Number: 86012
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.8, 21-Feb-18
Document Number: 86012
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000