BYW56-TAP

BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 949539 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS • Rectification, general purpose  Models Available MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg       ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS BYW56 BYW56-TR 5000 per 10" tape and reel MINIMUM ORDER QUANTITY 25 000 BYW56 BYW56-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW52 VR = 200 V; IF(AV) = 2 A SOD-57 BYW53 VR = 400 V; IF(AV) = 2 A SOD-57 BYW54 VR = 600 V; IF(AV) = 2 A SOD-57 BYW55 VR = 800 V; IF(AV) = 2 A SOD-57 BYW56 VR = 1000 V; IF(AV) = 2 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2t-rating Junction and storage temperature range PART SYMBOL VALUE UNIT BYW52 VR = VRRM 200 V BYW53 VR = VRRM 400 V BYW54 VR = VRRM 600 V BYW55 VR = VRRM 800 V BYW56 VR = VRRM 1000 V IFSM 50 A IFRM 12 A  = 180 ° IF(AV) 2 A tp = 20 μs half sine wave, Tj = 175 °C PR 1000 W l(BR)R = 1 A, Tj = 175 °C ER 20 mJ i2t 8 A2s Tj = Tstg -55 to +175 °C Rev. 1.9, 21-Feb-18 Document Number: 86049 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - 0.9 1 V VR = VRRM IR - 0.1 1 μA μA Forward voltage Reverse current UNIT VR = VRRM, Tj = 100 °C IR - 5 10 Breakdown voltage IR = 100 μA, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V Diode capacitance VR = 4 V, f = 1 MHz CD - 18 - pF ns Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 4000 IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr - - 4000 ns lF = 1 A, dI/dt = 5 A/μs Qrr - - 200 nC Reverse recovery charge 2.5 120 l l IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 80 TL = constant 60 40 20 2.0 0 5 10 15 20 25 1.0 RthJA = 100 K/W 0.5 PCB: d = 25 mm 0 30 l - Lead Length (mm) 949101 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (°C) 16351 Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 10 IR - Reverse Current (μA) Tj = 175 °C IF - Forward Current (A) RthJA = 45 K/W l = 10 mm 1.5 0.0 0 1 Tj = 25 °C 0.1 0.01 VR = VRRM 100 10 1 0.001 0.0 16350 VR = VRRM half sine wave 0.4 0.8 1.2 25 1.6 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage 16352 50 75 100 125 150 175 Tj - Junction Temperature (°C) Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.9, 21-Feb-18 Document Number: 86049 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors 40 400 VR = VRRM 350 CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) www.vishay.com 300 PR - Limit at 100 % VR 250 200 150 PR - Limit at 80 % VR 100 50 30 25 20 15 10 0 5 0 25 16353 f = 1 MHz 35 50 75 100 125 150 0.1 175 16354 Tj - Junction Temperature (°C) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 Zthp - Thermal Resistance for Pulse Cond. (K/W) VRRM = 1000 V, RthJA = 100 K/W 100 tp/T = 0.5 Tamb = 25 °C tp/T = 0.2 Tamb = 45 °C tp/T = 0.1 10 Tamb = 60 °C tp/T = 0.05 1 tp/T = 0.02 Tamb = 70 °C tp/T = 0.01 Tamb = 100 °C 10-5 10-4 10-3 10-2 10-1 100 101 tp - Pulse Length (s) 94 9178 1 10 100 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.9, 21-Feb-18 Document Number: 86049 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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