BZG04-27-M3-08

BZG04-M-Series www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • High reliability • Stand-off voltage range 8.2 V to 220 V • Excellent clamping capability • Fast response time • AEC-Q101 qualified available • Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade SMA (DO-214AC) • Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 10 to 270 V Test current IZT 2 to 50 mA VBR 9.4 to 251 V VWM 8.2 to 220 V PPPM 300 W 150 °C TJ max. VZ specification Circuit configuration Polarity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 UNIT APPLICATIONS • Protection from high voltage, high energy transients      Pulse current Single Uni-directional ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY BZG04-M-series BZG04-M-series BZG04xxx-M3-08 1500 per 7" reel 6000/box BZG04xxx-M3-18 6000 per 13" reel 6000/box BZG04-M-series BZG04xxx-HM3-08 1500 per 7" reel 6000/box BZG04-M-series BZG04xxx-HM3-18 6000 per 13" reel 6000/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SMA (DO-214AC) 73 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT RthJA < 25 K/W, Tamb = 100 °C Ptot 3000 mW RthJA < 100 K/W, Tamb = 50 °C Ptot 1250 mW Non repetitive peak surge power dissipation tp = 10/1000 μs exp. pulse, Tj = 25 °C prior to surge PZSM 300 W Peak forward surge current 10 ms single half sine wave Power dissipation Junction to lead Junction to ambient air 50 A 25 K/W Mounted on epoxy-glass hard tissue, fig. 1a RthJA 150 K/W Mounted on epoxy-glass hard tissue, fig. 1b RthJA 125 K/W Mounted on Al-oxide-ceramic (Al2O3), fig. 1b RthJA 100 K/W Tj 150 °C Tstg -65 to +150 °C VF 1.2 V Junction temperature Storage temperature range Forward voltage (max.) IFSM RthJL IF = 0.5 A Rev. 1.0, 13-Oct-17 Document Number: 86139 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZG04-M-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE TEST CURRENT STAND OFF VOLTAGE BREAKDOWN VOLTAGE VZ at IZT1 IZT1 VR at IR V(BR) at IZT1 V mA V NOM. CLAMPING VOLTAGE (1) VCL(R) at IPP IPP A μA V V MAX. MIN. MIN. TEMPERATURE JUNCTION COEFFICIENT CAPACITANCE TKVZ at IZT1 %/K Cj at VR = 0 V, f = 1 MHZ pF TYP. MAX. TYP. 1200 BZG04-8V2-M 10 50 8.2 20 9.4 14.8 20.3 0.05 0.09 BZG04-9V1-M 11 50 9.1 5 10.4 15.7 19.1 0.05 0.1 1100 BZG04-10-M 12 50 10 5 11.4 17 17.7 0.05 0.1 1000 BZG04-11-M 13 50 11 5 12.4 18.9 15.9 0.05 0.1 850 BZG04-12-M 15 50 12 5 13.8 20.9 14.4 0.05 0.1 815 BZG04-13-M 16 25 13 5 15.3 22.9 13.1 0.06 0.11 785 BZG04-15-M 18 25 15 5 16.8 25.6 11.7 0.06 0.11 710 BZG04-16-M 20 25 16 5 18.8 28.4 10.6 0.06 0.11 655 BZG04-18-M 22 25 18 5 20.8 31 9.7 0.06 0.11 610 BZG04-20-M 24 25 20 5 22.8 33.8 8.9 0.06 0.11 570 BZG04-22-M 27 25 22 5 25.1 38.1 7.9 0.06 0.11 545 BZG04-24-M 30 25 24 5 28 42.2 7.1 0.06 0.11 505 BZG04-27-M 33 25 27 5 31 46.2 6.5 0.06 0.11 475 BZG04-30-M 36 10 30 5 34 50.1 6 0.06 0.11 450 BZG04-33-M 39 10 33 5 37 54.1 5.5 0.06 0.11 420 BZG04-36-M 43 10 36 5 40 60.7 4.9 0.07 0.12 390 BZG04-39-M 47 10 39 5 44 65.5 4.6 0.07 0.12 370 BZG04-43-M 51 10 43 5 48 70.8 4.2 0.07 0.12 350 BZG04-47-M 56 10 47 5 52 78.6 3.8 0.07 0.12 330 BZG04-51-M 62 10 51 5 58 86.5 3.5 0.08 0.13 310 BZG04-56-M 68 10 56 5 64 94.4 3.2 0.08 0.13 291 BZG04-62-M 75 10 62 5 70 103.5 2.9 0.08 0.13 280 BZG04-68-M 82 10 68 5 77 114 2.6 0.08 0.13 275 BZG04-75-M 91 5 75 5 85 126 2.4 0.09 0.13 260 BZG04-82-M 100 5 82 5 94 139 2.2 0.09 0.13 250 BZG04-91-M 110 5 91 5 104 152 2 0.09 0.13 243 BZG04-100-M 120 5 100 5 114 167 1.8 0.09 0.13 170 BZG04-110-M 130 5 110 5 124 185 1.6 0.09 0.13 153 BZG04-120-M 150 5 120 5 138 204 1.5 0.09 0.13 150 BZG04-130-M 160 5 130 5 153 224 1.3 0.09 0.13 145 BZG04-150-M 180 5 150 5 168 249 1.2 0.09 0.13 140 BZG04-160-M 200 5 160 5 188 276 1.1 0.09 0.13 135 BZG04-180-M 220 2 180 5 208 305 1 0.09 0.13 131 BZG04-200-M 240 2 200 5 228 336 0.9 0.09 0.13 122 BZG04-220-M 270 2 220 5 251 380 0.8 0.09 0.13 120 Note (1) 10/1000 μs pulse Rev. 1.0, 13-Oct-17 Document Number: 86139 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZG04-M-Series www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 3.0 a) b) 2 2.5 IF - Forward Current (A) 5 2 1.5 10 2.0 1.5 1.0 0.5 1 25 94 9313 0 0 25 0.5 Fig. 1 - Boards for RthJA Definition (Copper Overlay 35 µ) 10 000 PZSM - Non-Repetitive Surge Power Dissipation (W) Ptot - Total Power Dissipation (W) 3 RthJA = 25 K/W 2.5 2 1.5 RthJA = 100 K/W 1 0.5 0 0 25 50 75 100 125 1000 100 10 0.01 150 Tamb - Ambient Temperature (°C) 0.1 1 10 100 tp - Pulse Length (ms) 94 9582 Fig. 2 - Typ. Total Power Dissipation vs. Ambient Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) 2.0 1.5 Fig. 3 - Forward Current vs. Forward Voltage 3.5 94 9580 1.0 VF - Forward Voltage (V) 94 9581 Fig. 4 - Non Repetitive Surge Power Dissipation vs. Pulse Length 1000 100 tp/T = 0.5 10 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 1 10-5 94 9583 tp/T = 0.01 10-4 10-3 10-2 10-1 100 101 102 tp - Pulse Length (s) Fig. 5 - Thermal Response Rev. 1.0, 13-Oct-17 Document Number: 86139 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZG04-M-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SMA (DO-214AC) 5.5 (0.217) 4.9 (0.193) 4.5 (0.176) 0.1 (0.004) 0.2 (0.008) 2.0 (0.078) 2.3 (0.090) 4.2 (0.164) 3.3 (0.130) 2.3 (0.090) 2.8 (0.109) 1.4 (0.055) 1.7 (0.066) 2.5 (0.098) Foot print recommendation: 2.21 (0.087) 2.3 (0.091) max. Document no.:S8-V-3848.01-003 (4) Created - Date: 18.February.1997 Rev. 8 - Date: 10.November 2006 2.2 (0.087) max. 6.7 (0.264) ref. 19628 Rev. 1.0, 13-Oct-17 Document Number: 86139 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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