DF04S-E3/77

DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface-Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ~ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ~ TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Case Style DFS LINKS TO ADDITIONAL RESOURCES MECHANICAL DATA 3D 3D Case: DFS 3D Models Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade PRIMARY CHARACTERISTICS IF(AV) 1A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 5 μA VF at IF = 1.0 A 1.1 V TJ max. 150 °C Package DFS Circuit configuration Quad Terminals: matte tin plated leads, solderable J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked on body      MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A I2t 10 A2s TJ, TSTG -55 to +150 °C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Note (1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads Revision: 09-Jul-2020 Document Number: 88573 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Maximum instantaneous forward voltage drop per diode Maximum DC reverse current at rated DC blocking voltage per diode 1.0 A VF TA = 25 °C 1.1 5.0 IR TA = 125 °C Typical junction capacitance per diode (1) V μA 500 CJ 25 pF Note (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) DF005S DF01S DF02S DF04S RJA 40 RJL 15 DF06S DF08S DF10S UNIT °C/W Note (1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE DF06S-E3/45 0.399 45 50 Tube DF06S-E3/77 0.399 77 1500 13" diameter paper tape and reel Revision: 09-Jul-2020 Document Number: 88573 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Reverse Current (µA) Average Forward Output Current (A) 1.0 60 Hz Resistive or Inductive Load 0.5 P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads 0 TJ = 125 °C 1 0.1 TJ = 50 °C 0.01 20 40 60 80 100 120 140 160 0 20 40 80 60 100 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Derating Curve Output Rectified Current Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 60 100 TJ = 150 °C Single Sine-Wave 50 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 40 30 20 10 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1.0 Cycle 0 1 1 10 10 1 100 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 10 1 0.1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.4 0.6 0.8 1.0 1.2 1.4 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Heating Time (s) Fig. 3 - Typical Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Revision: 09-Jul-2020 Document Number: 88573 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFS Mounting Pad La yout 0.205 (5.2) 0.195 (5.0) 0.047 (1.20) 0.040 (1.02) 0.047 MIN. (1.20 MIN.) 0.404 MAX. (10.26 MAX.) 0.060 MIN. (1.52 MIN.) 0.404 (10.3) 0.386 (9.80) 0.335 (8.51) 0.320 (8.13) 45° 0.255 (6.5) 0.245 (6.2) 0.130 (3.3) 0.120 (3.05) 0.205 (5.2) 0.195 (5.0) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.013 (0.330) 0.003 (0.076) Revision: 09-Jul-2020 Document Number: 88573 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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