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DG2536DN-T1-E4

DG2536DN-T1-E4

  • 厂商:

    TFUNK(威世)

  • 封装:

    VFDFN10

  • 描述:

    IC SWITCH LV DUAL SPST 10DFN

  • 数据手册
  • 价格&库存
DG2536DN-T1-E4 数据手册
DG2535/DG2536 Vishay Siliconix 0.35-Ω Low-Voltage Dual SPDT Analog Switch DESCRIPTION FEATURES The DG2535/DG2536 is a sub 1 Ω (0.35 Ω at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has on-resistance matching (less than 0.05 Ω at 2.7 V) and flatness (less than 0.2 Ω at 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds make the DG2535/DG2536 an ideal interface to low voltage DSP control signals. The DG2535/DG2536 has fast switching speed with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is - 69 dB at 100 kHz. The DG2535/DG2536 is built on Vishay Siliconix’s high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG2535/DG2536 contains the additional benefit of 2,000 V ESD protection. In space saving MSOP-10 and DFN-10 lead (Pb)-free packages, the DG2535/DG2536 are high performance, low rON switches for battery powered applications. No lead (Pb) is used in the manufacturing process either inside the device/ package or on the external terminations. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured in DFN packages, the lead (Pb)-free "-E3/E4" suffix is being used as a designator. Lead (Pb)-free DFN products purchased at any time will have either a nickel-palladium-gold device termination or a 100 % matte tin device termination. The different lead (Pb)-free materials are interchangeable and meet all JEDEC standards for reflow and MSL rating. • • • • • • Low Voltage Operation Low On-Resistance - rON: 0.35 Ω at 2.7 V - 69 dB OIRR at 2.7 V, 100 kHz MSOP-10 and DFN-10 Packages ESD Protection > 2000 V Latch-Up Current > 300 mA (JESD 78) RoHS COMPLIANT BENEFITS • • • • • Reduced Power Consumption High Accuracy Reduce Board Space 1.8 V Logic Compatible High Bandwidth APPLICATIONS • • • • • • Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Relay Replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2535 V+ 1 10 NO2 NO1 2 9 COM2 Logic NC1 and NC2 NO1 and NO2 COM1 3 8 IN2 0 ON OFF IN1 4 7 NC2 1 OFF ON NC1 5 6 GND Top View TRUTH TABLE ORDERING INFORMATION DG2536 Temp Range V+ NC1 1 10 NC2 2 9 COM2 COM1 3 8 IN2 IN1 4 7 NO2 NO1 5 6 GND Document Number: 72939 S-71009-Rev. E, 14-May-07 Top View Package MSOP-10 - 40 to 85 °C DFN-10 Part Number DG2535DQ-T1-E3 DG2536DQ-T1-E3 DG2535DN-T1-E4 DG2536DN-T1-E4 www.vishay.com 1 DG2535/DG2536 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Referenced V+ to GND Unit - 0.3 to + 6 IN, COM, NC, NOa V - 0.3 to (V+ + 0.3) Continuous Current (NO, NC, COM) ± 300 Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 500 Storage Temperature (D Suffix) - 65 to 150 °C >2 kV ESD per Method 3015.7 MSOP-10c Power Dissipation (Packages)b DFN-10 mA 320 d mW 1191 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/°C above 70 °C d. Derate 14.9 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3 V) Parameter Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 Ve Limits - 40 to 85 °C Tempa Minb VNO, VNC VCOM Full 0 rON Room Full 0.35 0.5 0.6 Room 0.09 0.2 Symbol Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd rON Flatness On-Resistance ΔrDS(on) Match Between Channelsd Switch Off Leakage Current Channel-On Leakage Current INO(off) INC(off) ICOM(off) ICOM(on) V+ = 2.7 V, VCOM = 0.6 V/1.5 V, INO, INC = 100 mA Room V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V Ω 0.05 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 Room Full -1 - 10 1 10 1.4 nA Digital Control Input High Voltaged VINH Full Input Low Voltage VINL Full Input Capacitance Input Current www.vishay.com 2 Cin IINL or IINH 0.5 Full VIN = 0 or V+ Full 10 1 V pF 1 µA Document Number: 72939 S-71009-Rev. E, 14-May-07 DG2535/DG2536 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, ± 10 %, VIN = 0.4 or 2.0 Ve Limits - 40 to 85 °C Tempa Minb Typc Maxb Room Full 52 82 90 VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF Room Full 43 73 78 CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω Room 21 Room - 69 Room - 69 Room 145 Room 145 Room 406 Room 406 Unit Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injection Off-Isolation Crosstalk d d d NO, NC Off Capacitanced Channel-On Capacitanced td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on Full RL = 50 Ω, CL = 5 pF, f = 100 kHz VIN = 0 or V+, f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 ns 6 pC dB pF Power Supply Power Supply Current I+ VIN = 0 or V+ Full 1.0 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. Document Number: 72939 S-71009-Rev. E, 14-May-07 www.vishay.com 3 DG2535/DG2536 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.7 0.8 V+ = 1.8 V 0.5 V+ = 2.0 V V+ = 2.7 V V+ = 3.0 V 0.4 0.3 V+ = 3.3 V 0.2 0.1 0.0 0.0 V+ = 3.0 V IS = 100 mA 0.7 r ON - On-Resistance (Ω) r ON - On-Resistance (Ω) 0.6 T = 25 °C IA = 100 mA 0.6 0.5 85 °C - 40 °C 0.4 25 °C 0.3 0.2 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.0 4.0 0.5 1.0 VCOM - Analog Voltage (V) 2.5 3.0 rON vs. Analog Voltage and Temperature (NC1) 100000 100 mA V+ = 3.0 V VIN = 0 V 10 mA I+ - Supply Current (A) I+ - Supply Current (nA) 2.0 VCOM - Analog Voltage (V) rON vs. VCOM and Supply Voltage 10000 1.5 1000 100 V+ = 3 V 1 mA 100 µA 10 µA 1 µA 100 nA 10 nA 10 1 nA 10 100 Temperature (°C) 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10000 300 250 V+ = 3.0 V ICOM(on) V+ = 3.0 V 200 1000 ICOM(on) 150 I COM(off) 100 INO(off), INC(off) 10 Leakage Current (pA) Leakage Current (pA) 1K 100 INO(off), INC(off) 50 0 - 50 - 100 - 150 - 200 ICOM(off) - 250 1 - 60 - 40 - 20 0 20 40 60 80 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 4 100 - 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCOM - Analog Voltage (V) Leakage vs. Analog Voltage Document Number: 72939 S-71009-Rev. E, 14-May-07 DG2535/DG2536 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 t ON / t OFF - Switching Time (ns) 90 tON V+ = 2 V 80 Loss - 10 60 Loss, OIRR, X TALK (dB) 70 tON V+ = 3 V 50 tOFF V+ = 3 V 40 30 tOFF V+ = 2 V 20 OIRR XTA LK - 30 - 50 V+ = 3.0 V RL = 50 Ω - 70 10 0 - 60 - 40 - 20 0 20 40 60 80 - 90 100 1M 100 K Insertion Loss, Off-Isolation Crosstalk vs. Frequency 2.00 300 250 1.75 200 1.50 Q - Charge Injection (pC) - Switching Threshold (V) 1G Frequency (Hz) Switching Time vs. Temperature VT 100 M 10 M Temperature (°C) 1.25 1.00 0.75 0.50 150 100 50 V+ = 2.0 V 0 V+ = 3.0 V - 50 - 100 - 150 - 200 0.25 - 250 0.00 0 1 2 3 4 5 6 - 300 0.0 0.5 1.0 V+ - Supply Voltage (V) 1.5 2.0 2.5 3.0 VCOM - Analog Voltage (V) Charge Injection vs. Analog Voltage Switching Threshold vs. Supply Voltage TEST CIRCUITS V+ Logic Input V+ Switch Input NO or NC tr < 5 ns tf < 5 ns VOUT 0.9 x V OUT IN Logic Input 50 % VINL Switch Output COM VINH RL 300 Ω GND CL 35 pF Switch Output 0V tON tOFF 0V CL (includes fixture and stray capacitance) VOUT = VCOM RL Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. R L + R ON Figure 1. Switching Time Document Number: 72939 S-71009-Rev. E, 14-May-07 www.vishay.com 5 DG2535/DG2536 Vishay Siliconix TEST CIRCUITS V+ Logic Input V+ COM NO VNO VO VINH tr < 5 ns tf < 5 ns VINL NC VNC RL 300 Ω IN CL 35 pF GND VNC = V NO VO 90 % Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ ΔVOUT VOUT Rgen V+ COM NC or NO IN VOUT On + IN Off On CL = 1 nF VIN = 0 - V+ Q = ΔVOUT x CL GND IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection V+ V+ 10 nF 10 nF V+ NC or NO V+ IN COM COM RL 0 V, 2.4 V COM 0 V, 2.4 V Meter IN GND NC or NO GND Analyzer HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM Off Isolation = 20 log V NO/ NC Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72939. www.vishay.com 6 Document Number: 72939 S-71009-Rev. E, 14-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
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