DG2722DN-T1-E4

DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2722 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2722 switch is configured in DPDT. It handles bidirectional signal flow, achieving a 900 MHz - 3 dB bandwidth, and a port to port crosstalk and isolation at - 49 dB. Processed with high density sub micron CMOS, the DG2722 provide low parasitic capacitance. Signals are routed with minimized phase distortion and attain a bit to bit skew is as low as 40 pS. The DG2722 is designed for a wide range of operating voltages, from 2.7 V to 4.3 V that can be driven directly from one cell Li-ion battery. On-chip circuitry protects against conditions when either the D+/D- lines are shorted to the VBUS at the USB port. Additionally, logic control pins (S and OE) can tolerate the presence of voltages that are above the supply power rail (V+). The control logic threshold is guaranteed to be (VIH = 1.3 V/min). Latch up current is 300 mA, as per JESD78, and its ESD tolerance exceeds 8 kV. Packaged in ultra small miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm), it is ideal for portable high speed mix signal switching application. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-E4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. As a further sign of Vishay Siliconix's commitment, the DG2722 is fully RoHS complaint. • Halogen-free according to IEC 61249-2-21 Definition • Wide operation voltage range • Low on-resistance, 7  (typical at 3 V) • Low capacitance, CON = 5.8 pF (typical) • 3 dB high bandwidth: 900 MHz (typical) • Low bit to bit skew: 40 pS (typical) • Low power consumption • Low logic threshold: V • Power down protection: D+/D- pins can tolerate up to 5 V when V+ = 0 V • Logic (S and OE) above V+ tolerance • 8 kV ESD protection (HBM) • Latch-up current 300 mA per JESD78 • Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Cellular phones • • • • • • Portable media players PDA Digital camera GPS Notebook computer TV, monitor, and set top box FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 8 V+ 9 S 10 HSD1- 7 6 Control OE HSD1+ miniQFN-10L 5 HSD2+ 4 HSD2- 3 GND Rx 1 Top View Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 D- D+ Pin 1: LONG LEAD 2 Pin 1 Device marking: Rx for DG2722 x = Date/Lot Traceability Code www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number - 40 °C to 85 °C miniQFN-10 DG2722DN-T1-E4 TRUTH TABLE PIN DESCRIPTIONS OE (Pin 8) S (Pin 10) Function Pin Name Description 0 0 D+ = HSD1+ and D- = HSD1- OE Bus Switch Enable 0 1 D+ = HSD2+ and D- = HSD2- S Select Input 1 X Disconnect HSD1±, HSD2±, D± Data Port ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Unit V+ - 0.3 to 5 Reference to GND V - 0.3 to (V+ + 0.3) S, OE, D±, HSD1±, HSD2±a Current (Any Terminal except S, OE, D±, HSD1±, HSD2±) 30 mA Continuous Current (S, OE, D±, HSD1±, HSD2±) ± 250 Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) ± 500 Storage Temperature (D Suffix) - 65 to 150 °C Power Dissipation (Packages)b miniQFN-10c 208 mW ESD (Human Body Model) I/O to GND 8 kV Latch-up (Current Injection) 300 mA Notes: a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified VANALOG RDS(on) Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b Unit Analog Switch Analog Signal Ranged Full 0 Room V+ 7 RDS(on) V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V RON V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0.4 V Room 0.8 On-Resistance Resistance Flatnessd RON Flatness V+ = 3 V, ID± = 8 mA, VHSD1/2± = 0 V, 1 V Room 2 Switch Off Leakage Current I(off) V+ = 4.3 V, VHSD1/2± = 0.3 V, 3 V, VD± = 3 V, 0.3 V Full - 100 100 Channel On Leakage Current I(on) V+ = 4.3 V, VHSD1/2± = 0.3 V, 4 V, VD± = 4 V, 0.3 V Full - 200 200 V+ = 3 V to 3.6 V Full 1.3 V+ = 4.3 V Full 1.5 V+ = 3 V to 4.3 V Full VIN = 0 or V+ Full On-Resistance On-Resistance Match d Full V 8 9  nA Digital Control Input Voltage High VINH Input Voltage Low VINL Input Capacitance Input Current www.vishay.com 2 CIN IINL or IINH V 0.5 Full 6.5 -1 pF 1 µA Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Parameter Symbol Test Conditions Otherwise Unless Specified Limits - 40 °C to 85 °C Temp.a Min.b Typ.c Max.b Unit 30 ns Dynamic Characteristics Break-Before-Make Timee, d tBBM S, OE Turn-On Timee, d tON S, OE Turn-Off Timee, d tOFF Room 5 Full V+ = 3 V, VD1/2 ± = 1.5 V, RL = 50 , CL = 35 pF Room Full Room 25 Full Charge Injectiond QINJ CL = 1 nF, RGEN = 0 , VGEN = 0 V 0.5 Off-Isolationd OIRR - 30 Crosstalkd XTALK V+ = 3 V to 3.6 V, RL = 50 , CL = 5 pF, f = 240 MHz Bandwidthd BW V+ = 3 V to 3.6 V, RL = 50 , - 3 dB 900 D+/D- On Capacitance CON V+ = 3.3 V, OE = 0 V, f = 240 MHz 5.8 D1n, D2n Off Capacitance COFF V+ = OE = 3.3 V, f = 240 MHz Channel-to-Channel Skewd tSK(O) Skew Off Opposite Transitions of the Same Outputd tSK(p) Total Jitterd pC dB - 45 Room MHz pF 2.2 50 V+ = 3 V to 3.6 V, RL = 50 , CL = 5 pF 20 tJ ps 200 Power Supply Power Supply Range V+ Power Supply Current I+ 2.6 VIN = 0 V, or V+ Full 4.3 V 2 µA Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. VIN = input voltage to perform proper function. f. Crosstalk measured between channels. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 28 26 V+ = 2.6 V 24 V+ = 3.0 V V+ = 2.6 V ION = 8 mA 25 22 RON - On-Resistance (Ω) RON - On-Resistance (Ω) T = 25 °C IS = 8 mA D1± V+ = 3.3 V 20 V+ = 3.6 V 18 V+ = 4.3 V 16 14 12 10 8 + 85 °C 20 + 25 °C 15 10 - 40 °C 5 6 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 0 0.5 1 VD - Analog Voltage (V) RON vs. VD and Single Supply Voltage 2.5 3 25 V+ = 3.0 V ION = 8 mA V+ = 3.3 V ION = 8 mA + 85 °C 20 RON - On-Resistance (Ω) 20 RON - On-Resistance (Ω) 2 RON vs. Analog Voltage and Temperature 25 + 25 °C 15 10 - 40 °C 5 + 85 °C 15 + 25 °C 10 - 40 °C 5 0 0.0 0 0 0.5 1 1.5 2 VD - Analog Voltage (V) 2.5 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 25 25 V+ = 4.3 V ION = 8 mA V+ = 3.6 V ION = 8 mA 20 + 85 °C 15 + 25 °C 10 - 40 °C RON - On-Resistance (Ω) 20 RON - On-Resistance (Ω) 1.5 VD - Analog Voltage (V) + 85 °C 15 + 25 °C 10 - 40 °C 5 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 4 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 mA 10 000 V+ = 4.3 V 1 mA V+ = 3.6 V 1000 Leakage Current (pA) I+ - Supply Current (A) V+ = 4.3 V 100 µA 10 µA V+ = 3.0 V 1 µA V+ = 3.3 V V+ = 2.6 V 100 nA 100 ID±(ON) 10 ID±(OFF) 10 nA ID±(OFF) 1 1 nA 100 pA 10 100 1K 10 K 100 K 1M 0.1 - 60 - 40 - 20 10 M 0 Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency 20 40 60 80 Temperature (°C) 100 120 140 Leakage Current vs. Temperature 1.20 0 1.15 -1 1.05 -2 1.00 VIH 0.95 -3 0.90 Gain (dB) VT - Switching Threshold (V) 1.10 VIL 0.85 0.80 -4 -5 0.75 0.70 -6 0.65 0.60 -7 0.55 0.50 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 -8 4.5 1 10 100 1000 Frequency (MHz) V+ - Supply Voltage (V) Gain vs. Frequency, V+ = 3.3 V 0 0 - 10 - 10 - 20 - 20 - 30 - 30 Crosstalk (dB) Off Isolation (dB) Switching Threshold vs. Supply Voltage - 40 - 50 - 60 - 40 - 50 - 60 - 70 - 70 - 80 - 80 - 90 - 90 - 100 1 10 100 Frequency (MHz) Off-Isolation, V+ = 3.3 V Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 10 000 1000 - 100 1 10 100 1000 Frequency (MHz) Crosstalk, V+ = 3.3 V www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input HSD1± or HSD2± Switch Input V+ VINL Switch Output D± tr  5 ns tf  5 ns 50 % VOUT 0.9 x V OUT Logic Input Switch Output S RL 50  OE GND CL 35 pF 0V tON tOFF 0V Logic "1" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT  D± (R L RL  R ON ) Figure 1. Switching Time V+ Logic Input V+ VHSD1± VHSD2± D± HSD1± VINH tr < 5 ns tf < 5 ns VINL VO HSD2± RL 50  S CL 35 pF HSD1± = HSD2± 90 % VO GND OE Switch 0V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen VOUT V+ HSD1± or HSD2± D± VOUT VOUT + IN OE Vgen CL = 1 nF VIN = 0 - V+ GND On On Off S Q= OUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com 6 Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG2722 Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ HSD1± or HSD2± OE D± 0 V, 2.4 V Meter D± OE 0 V, 2.4 V RL GND HSD1± or HSD2± S S HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz Analyzer VD± Off Isolation = 20 log V HSD2± or HSD1± Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68379. Document Number: 68379 S11-2216-Rev. F, 14-Nov-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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