DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
4 , 360 MHz, Dual SPST Analog Switches
DESCRIPTION
FEATURES
The DG3537, DG3538, DG3539, DG3540 are dual SPST
analog switches which operate from 1.8 V to 5.5 V single rail
power supply. They are design for audio, video, and USB
switching applications.
The devices have 4 on-resistance and 360 MHz 3 dB
bandwidth. 0.2 on-resistance matching and 1 flatness
make the device high linearity. The devices are 1.6 V logic
compatible within the full operation voltage range.
These switches are built on a sub-micron high density
process that brings low power consumption and low voltage
performance.
The switches are packaged in MICRO FOOT chip scale
package of 3 x 3 bump array.
•
•
•
•
•
•
1.8 V to 5.5 V operation
3 at 2.7 V RON
360 MHz - 3 dB bandwidth
ESD method 3015.7 > 2 kV
Latch-up current 0.300 mA (JESD 78)
1.6 V logic compatible
BENEFITS
•
•
•
•
•
As a committed partner to the community and environment,
Vishay Siliconix manufactures this product with the lead
(Pb)-free device terminations. For MICRO FOOT analog
switch products manufactured with tin/silver/copper
(SnAgCu) device termination, the lead (Pb)-free “-E1” suffix
is being used as a designator.
Space saving MICRO FOOT® package
High linearity
Low power consumption
High bandwidth
Full rail Signal swing range
APPLICATIONS
•
•
•
•
•
•
Cellular phones
MP3
Media players
Modems
Hard drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3537
MICRO FOOT 8-Bump
1
2
3
V+
A
IN2
GND
NO2
Device Marking
IN1
NO1
COM1
NO2
COM2
IN2
B
COM1
C
NO1
COM2
V+
Top View
Bumps Down
IN1
A1 Locator
XXX
3537
3537 = Device Marking
xxx = Data/Lot Traceability Code
GND
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
www.vishay.com
1
DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3538
MICRO FOOT 8-Bump
1
2
3
V+
A
IN2
GND
B
COM1
C
NC1
NC2
Device Marking
IN1
A1 Locator
COM1
NC1
COM2
XXX
3538
COM2
NC2
V+
IN1
3538 = Device Marking
IN2
Top View
Bumps Down
xxx = Data/Lot Traceability Code
GND
DG3539
MICRO FOOT 8-Bump
1
2
3
V+
A
IN2
GND
B
COM1
C
NO1
NC2
Device Marking
IN1
A1 Locator
COM1
NO1
COM2
XXX
3539
COM2
NC2
V+
IN1
3539 = Device Marking
IN2
Top View
Bumps Down
xxx = Data/Lot Traceability Code
GND
DG3540
MICRO FOOT 8-Bump
1
2
3
A
IN1
V+
NO1
B
COM2
V+
Device Marking
IN1
A1 Locator
NO1
COM1
NO2
C
COM2
NO2
COM1
GND
XXX
3540
IN2
3540 = Device Marking
IN2
Top View
Bumps Down
xxx = Data/Lot Traceability Code
GND
TRUTH TABLE
ORDERING INFORMATION
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
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2
Temp. Range
- 40 °C to 85 °C
Package
Part Number
MICRO FOOT: 8 Bump
(3 x 3, 0.5 mm Pitch,
238 µm Bump Height)
DG3537DB-T5-E1
DG3538DB-T5-E1
DG3539DB-T5-E1
DG3540DB-T1-E1
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Reference V+ to GND
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM)
± 100
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature
(D Suffix)
Package Solder Reflow Conditions
b
IR/Convection
(Packages)c
mA
- 65 to 150
°C
250
ESD per Method 3015.7
Power Dissipation
Unit
- 0.3 to + 6
MICRO FOOT: 8 Bump (3 x 3 mm)
d
>2
kV
400
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps welded or soldered to PC Board.
d. Derate 5.0 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
V+ = 2.7 to 3.6 V, VIN = 0.5 V or 1.4 Ve
Temp.a
Min.b
VNO, VNC,
VCOM
Full
0
RON
Room
Full
3
4
4.3
Room
0.75
1.2
Symbol
Typ.c
Max.b
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistanced
RON
Flatness
RON Flatnessd
On-Resistance
RDS(on)
Match Between Channelsd
Switch Off Leakage Current
V+ = 2.7 V, VCOM = 0.2/1.5 V
INO, INC = 10 mA
f
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
Room
V+ = 3.6 V,
VNO, VNC = 0.3 V/3.3 V, VCOM = 3.3 V/0.3 V
V+ = 3.6 V,
VNO, VNC = VCOM = 0.3 V/3.3 V
0.25
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
1.4
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
f
Input Current
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
IINL or IINH
VIN = 0 or V+
Full
0.5
8
1
V
pF
1
µA
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DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 2.7 to 3.6 V, VIN = 0.5 V or 1.4 Ve
Temp.a
Min.b
Typ.c
Max.b
Room
Full
16
46
48
Room
Full
7
37
39
Room
1
Room
- 78.5
Room
- 113
Room
- 58
Room
- 66
Unit
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectiond
QINJ
d
OIRR
Off-Isolation
d
XTALK
Crosstalk
d
Off-Isolation
OIRR
Crosstalkd
XTALK
Off Capacitanced
Channel-On Capacitance
d
V+ = 2.7 V, VNO or VNC = 1.5 V
RL = 300 , CL = 35 pF
CL = 1 nF, VGEN = 2 V, RGEN = 0
RL = 50, CL = 5 pF, f = 1 MHz
RL = 50, CL = 5 pF, f = 10 MHz
CNO/NC(off)
Room
8
CCOM(off)
Room
14
Room
27
Room
27
Room
Full
0.001
CNO/NC(on)
VIN = 0 or V+, f = 1 MHz
CCOM(on)
ns
pC
dB
pF
Power Supply
Power Supply Current
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4
I+
VIN = 0 or V+
1.0
1.0
µA
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
- 40 °C to 85 °C
Test Conditions
Otherwise Unless Specified
Parameter
V+ = 4.2 to 5.5 V, VIN = 0.8 V or 2.0 Ve
Temp.a
Min.b
VNO, VNC,
VCOM
Full
0
RON
Room
Full
2.6
3.5
3.7
Room
0.8
1.2
Symbol
Typ.c
Max.b
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistanced
rON Flatnessd
RON
Flatness
On-Resistance
RDS(on)
Match Between Channelsd
Switch Off Leakage Current
INO(off)
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 4.2 V, VCOM = 0.5/3.5 V
INO, INC = 10 mA
Room
V+ = 5.5 V,
VNO, VNC = 1.0 V/4.5 V, VCOM = 4.5 V/1.0 V
V+ = 5.5 V, VNO, VNC = VCOM = 1.0 V/4.5 V
0.2
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
Room
Full
-2
- 20
2
20
2.0
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
0.8
8
1
V
pF
1
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectiond
QINJ
Off Capacitanced
Channel-On Capacitanced
V+ = 4.2 V, VNO or VNC = 3.0 V
RL = 300 , CL = 35 pF
CL = 1 nF, VGEN = 2 V, RGEN = 0
Room
Full
11
41
43
Room
Full
7
37
39
Room
1
CNO/NC(off)
Room
8
CCOM(off)
Room
14
Room
28
Room
28
Room
Full
0.001
CNO/NC(on)
VIN = 0 or V+, f = 1 MHz
CCOM(on)
ns
pC
pF
Power Supply
Power Supply Current
I+
VIN = 0 or V+
1.0
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
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DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6.0
T = 25 °C
IS = 10 mA
V+ = 1.8 V
5.5
5.0
V+ = 2.0 V
R ON - On-Resistance ()
4.5
4.0
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.6 V
V+ = 4.2 V
V+ = 5.0 V
3.5
3.0
2.5
2.0
1.5
V+ = 5.5 V
1.0
0.5
0.0
0
1
2
3
4
5
6
VCOM - Analog Voltage (V)
RON vs. VCOM and Supply Voltage
4.0
5
V+ = 2.7 V
IS = 10 mA
- 40 °C
85 °C
RON - On-Resistance ()
4
RON - On-Resistance ()
V+ = 4.2 V
IS = 10 mA
3.5
25 °C
3
2
- 40 °C
3.0
85 °C
2.5
25 °C
2.0
1.5
1.0
1
0.5
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
3
4
5
VCOM - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
10 mA
1 mA
V+ = 3.0 V
VIN = 0 V
I+ - Supply Current (A)
I+ - Supply Current (nA)
2
VCOM - Analog Voltage (V)
100 000
10 000
1
1000
100
V+ = 3 V
100 µA
10 µA
1 µA
100 nA
10 nA
1 nA
10
- 60
100 pA
- 40
- 20
0
20
40
60
80
Temperature (°C)
Supply Current vs. Temperature
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100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
300
10 000
250
V+ = 3.6 V
V+ = 3.6 V
200
INO(off)
INC(off)
ICOM(on)
100
ICOM(off)
10
150
Leakage Current (pA)
Leakage Current (pA)
1000
INO(off), INC(off)
100
ICOM(off)
50
0
ICOM(on)
- 50
- 100
- 150
- 200
- 250
1
- 60
- 40
- 20
0
20
40
60
80
- 300
0.0
100
0.5
1.0
Temperature (°C)
20
- 10
tON V+ = 2 V
16
Loss, OIRR, X TALK (dB)
t ON , t OFF - Switching Time (ns)
2.5
3.0
3.5
4.0
10
0
18
14
12
tON V+ = 4.2 V
10
8
tOFF V+ = 2 V
6
tOFF V+ = 4.2 V
Loss
- 20
- 30
- 40
- 50
OIRR
- 60
- 70
XTALK
- 80
- 90
4
V+ = 3.0 V
RL = 50
- 100
2
- 110
0
- 60
- 120
- 40
- 20
0
20
40
60
80
100
100 K
10 M
1M
100 M
1G
Frequency (Hz)
Temperature (°C)
Insertion Loss, Off-Isolation,
Crosstalk vs. Frequency
Switching Time vs. Temperature
10
2.00
8
1.75
6
1.50
Q - Charge Injection (pC)
- Switching Threshold (V)
2.0
Leakage vs. Analog Voltage
Leakage Current vs. Temperature
VT
1.5
VCOM, V NO, V NC - Analog Voltage (V)
1.25
1.00
0.75
0.50
4
V+ = 2.0 V
2
0
-2
-4
V+ = 5.0 V
-6
0.25
V+ = 3.0 V
-8
- 10
0.00
1
2
3
4
5
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
6
0
1
2
3
4
5
VCOM - Analog Voltage (V)
Charge Injection vs. Analog Voltage
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DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
NO or NC
Switch
Input
COM
VINH
50 %
tr 5 ns
tf 5 ns
VINL
Switch Output
VOUT
0.9 x V OUT
IN
Logic
Input
RL
300
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
RL
VOUT = VNOorNC
R L + R ON
Figure 1. Switching Time
V+
VOUT
VOUT
Rgen
V+
COM
NC or NO
IN
VOUT
On
+
IN
Off
On
CL = 1 nF
VIN = 0 - V+
Q = VOUT x CL
GND
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 2. Charge Injection
V+
V+
10 nF
10 nF
V+
NC or NO
V+
IN
COM
0V, 2.4 V
COM
Meter
COM
IN
0 V, 2.4 V
RL
GND
NC or NO
GND
Analyzer
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 3. Off-Isolation
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Figure 4. Channel Off/On Capacitance
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
DG3537, DG3538, DG3539, DG3540
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 8 BUMP (3 x 3, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT)
8 x Ø 0.150 0.229
Note b
Solder Mask Ø Pad Diameter + 0.1
Silicon
0.5
A2
A
A1
Bump
Note a
0.5
3
Recommended Land Pattern
2
1
b Diameter
A
e
Index-Bump A1
Note c
B
E
e
XXX
3540
C
S
S
e
e
Top Side (Die Back)
D
Notes (Unless Otherwise Specified):
a. Bump is Lead (Pb)-free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only.
Millimetersa
Inches
Dim.
Min.
Max.
Min.
Max.
A
0.688
0.753
0.0271
0.0296
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
b
0.306
0.346
0.0120
0.0136
D
1.480
1.520
0.0583
0.0598
E
1.480
1.520
0.0583
e
S
0.5 BASIC
0.230
0.0598
0.0197 BASIC
0.270
0.0091
0.0106
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73320.
Document Number: 73320
S11-0303-Rev. D, 28-Feb-11
www.vishay.com
9
Package Information
Vishay Siliconix
MICRO FOOT: 8-BUMP (3 mm x 3 mm, 0.5 mm PITCH, 0.238 mm BUMP HEIGHT)
8 x Ø 0.150 ~ 0.229
Note b
Solder Mask Ø ~ Pad Diameter + 0.1
Silicon
0.5
A2
A
A1
Bump
Note a
0.5
3
Recommended Land Pattern
2
1
b Diameter
A
e
Index-Bump A1
Note c
B
E
e
XXX
3540
C
S
S
e
e
Top Side (Die Back)
D
Notes
(unless otherwise specified)
a. Bump is lead (Pb)-free Sn/Ag/Cu.
b. Non-solder mask defined copper landing pad.
c. Laser mark on silicon die back; back-lapped, no coating. Shown is not actual marking; sample only.
DIM.
MILLIMETERSa
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.688
0.753
0.0271
0.0296
A1
0.218
0.258
0.0086
0.0102
A2
0.470
0.495
0.0185
0.0195
0.0136
b
0.306
0.346
0.0120
D
1.480
1.520
0.0583
0.0598
E
1.480
1.520
0.0583
0.0598
e
S
0.5 BASIC
0.230
0.0197 BASIC
0.270
0.0091
0.0106
Note
a. Use millimeters as the primary measurement.
ECN: S11-1065-Rev. A, 13-Jun-11
DWG: 6002
Document Number: 63271
Revison: 13-Jun-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
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Document Number: 91000
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