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DG9236DN-T1-E4

DG9236DN-T1-E4

  • 厂商:

    TFUNK(威世)

  • 封装:

    UFQFN10

  • 描述:

    IC ANLG SWITCH DUAL SPST 10QFN

  • 数据手册
  • 价格&库存
DG9236DN-T1-E4 数据手册
DG9236 Vishay Siliconix Dual SPDT Analog Switch DESCRIPTION FEATURES The DG9236 is a CMOS, dual SPDT analog switch designed to operate from V+ = 2.7 V to V+ = 16 V max. operating, single supply. All control logic inputs have a guaranteed 1.8 V logic high threshold when operation from a + 16 V power supply. This makes the DG9236 ideally suited to interface directly with low voltage micro-processor control signals. Processed with high density CMOS technology, the DG9236 while providing ultra low parasitic capacitance of 2 pF for CS(OFF) and 8.4 pF for CD(ON). Other performance features are: 3 dB bandwidth, 800 MHz, - 70 dB crosstalk and 62 dB off isolation at 10 MHz frequency. Key applications for the DG9236 are logic level translation, pulse generator, and high speed or low noise signal switching in precision instrumentations and portable device designs. The operation temperature range is specified from - 40 °C to + 85 °C. The DG9236 is available in space saving 1.4 mm x 1.8 mm miniQFN10 package. • • • • • • As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with lead (Pb)-free device termination. The miniQFN-10 package has a nickel-palladium-gold device termination and is represented by the lead (Pb)-free “-E4” suffix to the ordering part number. The nickel-palladium-gold device terminations meet all JEDEC standards for reflow and MSL rating. • • • • Leakage current < 0.5 nA max. at 85 °C Low switch capacitance (Csoff, 2 pF typ.) RDS(on) 101  max. 800 MHz bandwidth RoHS Fully specified with single supply operation at 16 V COMPLIANT Low voltage, 1.8 V CMOS/TTL compatible Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz) Fully specified from - 40 °C to 85 °C Latch-up current 300 mA per JESD78 Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm x 0.55 mm) Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • • High-end data acquisition Medical instruments Precision instruments High speed communications applications Automated test equipment Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG9236 miniQFN - 10L S2A 7 S2B 6 V+ 8 A1 9 5 D2 4 D1 Logic 3 S1B A0 10 1 Pin 1: LONG LEAD 2 GND S1A Top View 3x Pin 1 Device marking: 3x for DG9236 x = Date/Lot Traceability Code TRUTH TABLE Selected Input On Switches A1 A0 DG9236 X 0 D1 to S1A X 1 D1 to S1B 0 X D2 to S2A 1 X D2 to S2B Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix ORDERING INFORMATION Temp. Range - 40 °C to 85 °C Package 10 pin miniQFN Part Number DG9236DN-T1-E4 Notes: • - 40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit V+ to GND 18 Digital Inputsa, VS, VD Unit V (V+) + 0.3 or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature mA - 65 to 150 °C Power Dissipation (Package)b 10 pin miniQFNc, d 208 mW Thermal Resistance (Package)b 10 pin miniQFN 357 °C/W Notes: a. Signals on SX, DX, or AX exceeding V+ or GND will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.6 mW/°C above 70 °C. d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS (for 16 V Supply) Parameter Test Conditions Unless Otherwise Specified V+ = 16 V, VA0, A1 = 1.8 V, 0.5 Va Temp.b RDS(on) IS = 1 mA, VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V Room Full 101 145 160 RON IS = 1 mA, VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V Room Full 2 14 15 RFLATNESS IS = 1 mA, VD = 0.7 V, 2.6 V, 8 V, 11 V, 15.3 V Room Full 38 55 60 Room Full ± 0.01 -1 -2 1 2 Room Full ± 0.01 -1 -2 1 2 Symbol - 40 °C to 85 °C Typ.c Min.d Max.d Unit 16 V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current Channel On Leakage Current VANALOG IS(off) ID(off) Full V+ = 16 V, VD = 1 V/15 V, VS = 15 V/1 V ID(on) V+ = 16 V, VD = VS 1 V/15 V Room Full ± 0.01 -1 -2 1 2  nA Digital Control Input Current, VIN Low IIL VAX = 0.5 V Full 0.005 - 0.1 0.1 Input Current, VIN High IIH VAX = 1.8 V Full 0.005 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 3 Room Full 30 70 80 Room Full 17 55 65 Room Full 19 25 µA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make tBBM RL = 300 , CL = 35 pF see figure 1, 2 ns 1 1 Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 6 Off Isolatione OIRR RL = 50 , CL = 5 pF, f = 10 MHz Room - 62 dB BW RL = 50  Room 800 MHz XTALK RL = 50 , CL = 5 pF, f = 10 MHz Room - 70 dB Bandwidthe Channel-to-Channel Crosstalke www.vishay.com 2 pC Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix SPECIFICATIONS (for 16 V Supply) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 16 V, VA0, A1 = 1.8 V, 0.5 Va - 40 °C to 85 °C Temp.b Typ.c Min.d Max.d Unit Dynamic Characteristics Source Off Capacitancee CS(off) Channel On Capacitancee CD(on) Total Harmonic Distortione THD f = 1 MHz Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600  Room 2 Room 8.4 Room 0.18 Room Full 0.013 0.022 Room Full 0.01 0.021 pF % Power Supplies Power Supply Current I+ VIN = 0 V, or V+ Ground Current IGND 0.5 1.0 - 0.5 - 1.0 µA SPECIFICATIONS (for 5 V Supply) Parameter Test Conditions Unless Otherwise Specified V+ = 5 V, VA0, A1 = 1.4 V, 0.5 Va Temp.b VANALOG Full RDS(on) IS = 1 mA, VD = 0 V, 3 V, 3.5 V Room Full 301 365 380 RON IS = 1 mA, VD = 0 V, 3 V, 3.5 V Room Full 3 14 15 Room Full ± 0.01 -1 - 1.2 1 1.2 Room Full ± 0.01 -1 - 1.2 1 1.2 Symbol - 40 °C to 85 °C Typ.c Min.d Max.d Unit 5 V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match IS(off) Switch Off Leakage Current ID(off) V+ = 5.5 V, VD = 1 V/4.5 V, VS = 4.5 V/1 V ID(on) V+ = 5.5 V, VS = VD = 1 V/4.5 V Room Full ± 0.01 -1 - 1.2 1 1.2 Input Current, VIN Low IL VAX = 0.5 V Full 0.005 - 0.1 0.1 Input Current, VIN High IH VAX = 1.4 V Full 0.005 - 0.1 0.1 CIN f = 1 MHz Room 3 Room Full 70 100 110 Room Full 17 70 80 Room Full 42 Channel On Leakage Current  nA Digital Control Input Capacitance µA pF Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make-Time tBMM Full 2 f = 10 MHz, RL = 50 , CL = 5 pF - 62 Room - 70 BW RL = 50  Room 570 MHz THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600  Room 2.4 % f = 1 MHz Room OIRR Crosstalke XTALK Total Harmonic Distortion e 5 1 Room QINJ Off-Isolatione Bandwidth ns CL = 1 nF, RGEN = 0 , VGEN = 0 V Charge Injectione e RL = 300 , CL = 35 pF see figure 1, 2 Source Off Capacitancee CS(off) Channel On Capacitancee CD(on) pC dB 2.1 pF 8.1 Power Supplies Power Supply Current I+ VIN = 0 V, or V+ Ground Current Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 IGND Room Full 0.001 Room Full - 0.001 0.5 1 - 0.5 -1 µA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix SPECIFICATIONS (for 3 V Supply) - 40 °C to + 85 °C Test Conditions Unless Otherwise Specified V+ = 3 V, VA0, A1 = 1.4 V, 0.5 Va Temp.b VANALOG Full RDS(ON) IS = 1 mA, VD = + 1.5 V Room Full 732 795 810 On-Resistance Match RON IS = 1 mA, VD = + 1.5 V Room Full 5 16 17 Switch Off Leakage Current (for 16 pin miniQFN) IS(off) Room Full ± 0.01 -1 - 1.2 1 1.2 Room Full ± 0.01 -1 - 1.2 1 1.2 Parameter Symbol Typ.c Min.d Max.d Unit 3 V Analog Switch Analog Signal Rangee On-Resistance ID(off) Channel On Leakage Current (for 16 pin miniQFN) V+ = 3.3 V, V- = 0 V VD = 1 V/3 V, VS = 3 V/1 V ID(on) V+ = 3.3 V, V- = 0 V, VS = VD = 1 V/3 V Room Full ± 0.01 -1 - 1.2 1 1.2 Input Current, VIN Low IL VAX = 0.5 V Full 0.005 - 0.1 0.1 Input Current, VIN High IH VAX = 1.4 V Full 0.005 - 0.1 0.1 CIN f = 1 MHz Room 3.1 Room Full 30 150 170 Room Full 20 110 120 Room Full 19 25  nA Digital Control Input Capacitance µA pF Dynamic Characteristics Enable Turn-On Time tON Enable Turn-Off Time tOFF Break-Before-Make-Time tBMM Charge Injectione QINJ Off-Isolatione OIRR Crosstalke XTALK Bandwidthe Total Harmonic Distortion e e RL = 300 , CL = 35 pF see figure 1, 2 CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 1 f = 10 MHz, RL = 50 , CL = 5 pF Room - 63 Room - 70 5 1 ns not limit pC dB BW RL = 50  Room 183 MHz THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600  Room 5.5 % f = 1 MHz Room Source Off Capacitance CS(off) Channel On Capacitancee CD(on) 2.1 pF 8.3 Power Supplies Power Supply Current I+ VIN = 0 V, or V+ Ground Current IGND Room Full 0.001 Room Full - 0.001 0.5 1 - 0.5 -1 µA Notes: a. VIN = input voltage to perform proper function. b. Room = 25 ºC, Full = as determined by the operating temperature. c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix 150 900 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 T = 25 °C IS = 1 mA VCC = 2.7 V 130 VCC = 12 V 120 VCC = 3.0 V VCC = 5.0 V 110 VCC = 13.2 V 100 90 VCC = 14.6 V 80 70 VCC = 17.6 V VCC = 16 V 60 50 40 30 20 10 VCC = 10.8 V 0 2 4 6 8 0 0 10 2 4 6 10 12 14 16 RON vs. VD and Single Supply Voltage 500 900 450 VCC = 5 V IS = 1 mA 400 VCC = 3 V IS = 1 mA 800 700 + 85 °C RON - On-Resistance () RON - On-Resistance () 8 VD - Analog Voltage (V) VD - Analog Voltage (V) RON vs. VD and Single Supply Voltage 350 300 + 25 °C 250 200 - 40 °C 150 600 + 85 °C 500 + 25 °C 400 300 100 200 50 100 0 - 40 °C 0 0 1 2 3 4 0 5 0.5 1 VD - Analog Voltage (V) 1.5 2 2.5 3 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature RON vs. Analog Voltage and Temperature 200 200 VCC = 12 V IS = 1 mA 175 VCC = 16 V IS = 1 mA 175 + 85 °C 150 RON - On-Resistance () RON - On-Resistance () T = 25 °C IS = 1 mA 140 RON - On-Resistance () RON - On-Resistance () TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) + 25 °C 125 100 75 - 40 °C 50 25 150 + 85 °C 125 + 25 °C 100 75 - 40 °C 50 25 0 0 0 2 4 6 8 10 12 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 14 0 5 10 15 20 VD - Analog Voltage (V) RON vs. Analog Voltage and Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 mA V+ = 16 V 10 mA VCC = 16 V 1 mA I+ - Supply Current (A) Supply Current (nA) 10 1 I+ 0.1 IGND 0.01 100 µA 10 µA 1 µA 100 nA 10 nA 1 nA - 40 °C + 85 °C 100 pA 10 pA 0.001 - 50 + 25 °C 1 pA 0 50 100 150 0 2 4 6 8 10 12 14 16 Temperature (°C) Temperature (°C) Supply Current vs. VIN and Temperature Supply Current vs. Temperature 10 mA 100 000 1 mA VCC = + 13.2 V 10 000 V+ = 17.6 V Leakage Current (pA) ICC - Supply Current (A) 100 µA 10 µA V+ = 16 V 1 µA V+ = 12 V V+ = 3 V 100 nA V+ = 5 V 1000 ID(off) 100 10 nA IS(off) 10 ID(on) 1 nA 100 pA 10 100 1K 10K 100K 1M 1 - 60 - 40 - 20 10M 0 20 Input Switching Frequency (Hz) 40 60 80 100 120 140 Temperature (°C) Leakage Current vs. Temperature Supply Current vs. Input Switching Frequency 100 100 000 80 V+ = 16 V T = 25 °C VCC = + 16 V 60 Leakage Current (pA) Leakage Current (pA) 10 000 ID(off) 1000 ID(on) 100 IS(off) 10 40 IS(off) ID(off) 20 0 - 20 ID(on) - 40 - 60 - 80 1 - 50 www.vishay.com 6 - 100 0 50 100 150 0 2 4 6 8 10 12 14 16 Temperature (°C) VD - Analog Voltage (V) Leakage Current vs. Temperature Leakage Current vs. Analog Voltage 18 Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 500 V+ = 16 V T = 85 °C 300 Leakage Current (pA) tON(EN), tOFF(EN) - Switching Time (ns) 400 200 ID(off) 100 IS(off) 0 ID(on) - 100 - 200 - 300 160 tON VCC = + 3 V 120 tON VCC = + 5 V 80 40 tOFF VCC = + 3 V tOFF VCC = + 5 V - 400 0 - 60 - 40 - 20 - 500 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 20 40 60 80 100 120 140 Temperature (°C) VD - Analog Voltage (V) Switching Time vs. Temperature tON/tOFF Leakage Current vs. Analog Voltage 50 DG9236 40 120 tON VCC = + 12 V tbbm - Switching Time (ns) tON(EN), tOFF(EN) - Switching Time (ns) 140 30 tON VCC = + 16 V 20 tOFF VCC = + 12 V 100 tbbm VCC = + 3 V 80 60 tbbm VCC = + 5 V 40 tbbm VCC = + 12 V 10 20 tOFF VCC = + 16 V 0 - 60 - 40 - 20 0 20 40 60 80 0 - 60 - 40 - 20 100 120 140 tbbm VCC = + 16 V 0 20 Temperature (°C) Switching Time vs. Temperature tON/tOFF 100 120 140 6 T = 25 °C CL = 1 nF 4 V+ = 16 V GND = 0 V RL = 50  Charge Injection (PC) LOSS, OIRR, XTALK (dB) 80 LOSS - 10 - 30 60 Switching Time vs. Temperature 0 - 20 40 Temperature (°C) - 40 - 50 OIRR - 60 XTALK (Adjacent) - 70 - 80 - 90 2 0 VCC = 17.6 V VCC = 3 V -2 VCC = 12 V VCC = 5 V -4 -6 - 100 - 110 100K -8 1M 10M 100M Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 1G 0 2 4 6 8 10 12 14 16 18 Source Volts DG9236 BCFE-C Charge Injection Measured at Drain CL = 1 nF www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 10 000 000 Ipos V + 17.6 V 1 000 000 1.3 Ipos V + 16 V VT- Switching Threshold (V) 100 000 Power Supply Current (nA) 1.4 10 000 1000 100 10 1 0.1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.01 0.5 Ipos V + 12 V Ipos V + 5 V 0.001 0.4 0 2 4 6 8 10 12 14 16 18 2 20 4 6 8 VIN (V) 10 12 14 16 18 20 22 V + - Supply Voltage (V) Supply Current vs. VIN and Temperature Switching Threshold (Lower) vs. Single Supply Voltage 100 DG 9236 V+ = 13.2 V RL = 600  VSignal = 1 VRMS 10 THD (%) 1 0.1 0.01 0.001 10 100 1000 10 000 100 000 Frequency (Hz) THD vs. Frequency TEST CIRCUITS V+ V+ A0 or A1 50 Ω t r < 5 ns t f < 5 ns VCC S1A or S2A V+ VAX 50 % 0V S1B or S2B VS1A or VS2A VO D1 or D2 GND 300 Ω 35 pF 90 % 90 % VO 50 % 0V t ON t OFF S1A or S2A ON Figure 1. Enable Switching Time www.vishay.com 8 Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix TEST CIRCUITS V+ tr < 5 ns tf < 5 ns VCC V+ V+ SxA - SxB A0 50 % VA0,A1 0V A1 50 Ω VSxA or VSxB 80 % D1 or D2 GND VO VO 300 Ω 35 pF 0V tD Figure 2. Break-Before-Make V+ t r < 5 ns t f < 5 ns V+ VCC A0 or A1 ON OFF VAX OFF 0V Rg SxA or SxB VO Vg ΔVO VO D1 or D2 CL 1 nF GND Charge Injection = ΔVO X CL Figure 3. Charge Injection V+ V+ Network Analyzer V+ V+ A0 or A1 Network Analyzer V+ VIN A0 S1A or S2A Vg Rg = 50 Ω VIN SxA or SxB A1 Vg VOUT VOUT D1 or D2 D1 or D2 GND 50 Ω Insertion Loss = 20 log VOUT VIN Figure 4. Insertion Loss Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 Rg = 50 Ω GND 50 Ω Off Isolation = 20 log VOUT VIN Figure 5. Off-Isolation www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9236 Vishay Siliconix TEST CIRCUITS V+ V+ Network Analyzer V+ A0 or A1 V+ S1A or S2A VIN Vg Rg = 50 V+ V+ A0 or A1 D1 or D2 VOUT S1A or S2A | to | S2A or S2B Impedance Analyzer S1B or S2B 50 Ω GND D1 or D2 50 Ω GND Cross Talk = 20 log VOUT VIN Figure 6. Crosstalk V- V- Figure 7. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67049. www.vishay.com 10 Document Number: 67049 S11-0598-Rev. B, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MINI QFN-10L CASE OUTLINE DIM MILLIMETERS INCHES MIN. NAM. MAX. MIN. NAM. MAX. A 0.45 0.55 0.60 0.0177 0.0217 0.0236 A1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 0.150 or 0.127 REF (1) c 0.006 or 0.005 REF (1) D 1.70 1.80 1.90 0.067 0.071 0.075 E 1.30 1.40 1.50 0.051 0.055 0.059 e 0.40 BSC 0.016 BSC L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.0177 0.0197 0.0217 Note (1) The dimension depends on the leadframe that assembly house used. ECN T16-0163-Rev. B, 16-May-16 DWG: 5957 Revision: 16-May-16 1 Document Number: 74496 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 10L 1.700 (0.0669) 9x 0.563 (0.0221) 0.663 (0.0261) 0.200 (0.0079) 1 2.100 (0.0827) 0.400 (0.0157) Pitch 10 x 0.225 (0.0089) Mounting Footprint Dimensions in mm (inch) Document Number: 66554 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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