Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
GI850, GI851, GI852, GI854, GI856, GI858
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Vishay General Semiconductor
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
Note
• These devices are not AEC-Q101 qualified.
IFSM
100 A
MECHANICAL DATA
trr
200 ns
IR
10 μA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF
1.25 V
TJ max.
150 °C
Package
DO-201AD
Diode variation
Single die
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GI850
GI851
GI852
GI854
GI856
GI858
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
V
Maximum non-repetitive peak reverse voltage
VRSM
75
150
250
450
650
880
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 90 °C
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
100
A
TJ, TSTG
-50 to +150
°C
Operating junction and
storage temperature range
Revision: 27-Feb-14
Document Number: 88630
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
GI850, GI851, GI852, GI854, GI856, GI858
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum
instantaneous
forward voltage
3.0 A
SYMBOL
GI850
GI851
GI852
TA = 25 °C
GI854
GI856
GI858
1.25
VF
V
TJ = 175 °C
9.4 A
Maximum DC reverse
current at rated DC
blocking voltage
UNIT
1.10
TA = 25 °C
10
IR
TA = 100 °C
μA
150
150
200
250
300
500
Maximum reverse
recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
trr
200
ns
Maximum reverse
recovery current
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
IRM(REC)
2.0
A
Typical junction
capacitance
4.0 V, 1 MHz
CJ
28
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
GI850
GI851
GI852
GI854
RJA (1)
22
RJL (1)
8.0
GI856
GI858
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GI856-E3/54
1.1
54
1400
13" diameter paper tape and reel
GI856-E3/73
1.1
73
1000
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
8.3 ms Single Half Sine-Wave
L = Lead Length
TL = Lead Temperature
L=
0.2
5" (
6.3
mm
L=
)
0.3
75
" (9
.5
mm
)
6.0
4.0
2.0
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
TA = Ambient Temperature
0.375" (9.5 mm) Lead Length
0
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
8.0
TJ = 25 °C
100
Non-Repetitive
TJ = 150 °C
TJ = 25 °C
Repetitive
TJ = 150 °C
10
30
50
70
90
110
130
150
170
1
10
100
Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Peak Forward Surge Current
Revision: 27-Feb-14
Document Number: 88630
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Not Available for New Designs, Use RGP30A, RGP30B, RGP30D, RGP30G
GI850, GI851, GI852, GI854, GI856, GI858
www.vishay.com
Vishay General Semiconductor
100
10
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
1
0.1
0.01
0.4
10
0.6
0.8
1.0
1.2
1.4
1.6
1
1.8
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
Instantaneous Reverse Current (μA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 100 °C
1
TJ = 50 °C
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
100
Fig. 4 - Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 27-Feb-14
Document Number: 88630
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000