IRF840HPBF

IRF840HPBF www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low figure-of-merit (FOM) Ron x Qg TO-220AB • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) G G D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S S APPLICATIONS N-Channel MOSFET • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C 550 VGS = 10 V Qg max. (nC) 0.740 39 Qgs (nC) 9 Qgd (nC) 12 Configuration Single ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and halogen-free IRF840HPBF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 500 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dv/dt d Soldering recommendations (peak temperature) c For 10 s V 7.3 4.6 A IDM 17 1.0 W/°C EAS 175 mJ Linear derating factor Single pulse avalanche energy b UNIT PD 125 W TJ, Tstg -55 to +150 °C dv/dt 100 0.2 260 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 120 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 5 A c. 1.6 mm from case d. ISD  ID, di/dt = 100 A/μs, starting TJ = 25 °C S22-0794-Rev. A, 19-Sep-2022 Document Number: 92441 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840HPBF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Maximum junction-to-case (drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.56 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 100 Gate-source leakage IGSS Zero gate voltage drain current IDSS μA - 0.740 0.850  gfs VDS = 50 V, ID = 4.8 A - 2.8 - S Input capacitance Ciss 1059 - Coss - 125 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1 MHz - Output capacitance - 14 - Effective output capacitance, energy related a Co(er) - 40 - Effective output capacitance, time  related b Co(tr) - 72 - Drain-source on-state resistance Forward transconductance a RDS(on) VGS = 10 V ID = 4.8 A Dynamic pF VDS = 0 V to 400 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 8 A, VDS = 400 V - 26 39 - 9 - Gate-drain charge Qgd - 12 - Turn-on delay time td(on) - 15 30 VDD = 400 V, ID = 8 A, VGS = 10 V, Rg = 9.1  - 30 60 - 23 46 - 17 34 f = 1 MHz, open drain 0.5 1.0 2.0 - - 7.3 - - 17 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM S22-0794-Rev. A, 19-Sep-2022 MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 8 A, VGS = 0 V TJ = 25 °C, IF = IS = 8 A, di/dt = 100 A/μs, VR = 25 V S - - 1.2 V - 441 882 ns - 2.9 5.8 μC - 12 - A Document Number: 92441 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840HPBF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 3.0 TJ = 25 °C 9V 10 1000 8V 100 5 7V 6V 5V 0 0 5 10 15 2.5 2.0 1000 1.5 VGS = 10 V 1.0 100 0.5 10 10 0 20 -60 -40 -20 0 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Axis Title Axis Title 10000 15 V 14 V 13 V 12 V 11 V 10 V 10 000 TJ = 150 °C Ciss 6 7V 100 3 1000 2nd line C - Capacitance (pF) 1000 8V 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 12 9 20 40 60 80 100 120 140 160 10000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 100 Coss 10 Crss 1st line 2nd line 15 10000 ID = 8 A 1st line 2nd line 15 V 14 V 13 V 12 V 11 V 10 V RDS(on) - Drain-to-Source On-Resistance (Normalized) 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 20 100 6V 5V 0 5 10 15 10 1 10 0 20 100 200 300 400 500 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title 20 8 10 000 10000 1000 10 TJ = 150 °C 100 5 2nd line Coss - Output Capacitance (pF) 15 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) TJ = 25 °C 6 1000 Eoss Coss 4 100 2 VDS = 18 V 10 0 0 5 10 15 20 10 0 0 100 200 300 400 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S22-0794-Rev. A, 19-Sep-2022 Eoss - Output Capacitance Stored Energy (µJ) 2nd line 0 500 Document Number: 92441 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840HPBF www.vishay.com Vishay Siliconix Axis Title Axis Title 10000 VDS = 400 V VDS = 250 V VDS = 100 V 8 6 100 3 1000 6 1st line 2nd line 1000 2nd line ID - Drain Current (A) 9 10000 10 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 4 100 2 0 8 16 24 10 0 10 0 32 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title TJ = 25 °C 10 TJ = 150 °C 100 VGS = 0 V 10 1 0.2 0.4 0.6 0.8 1.0 1.2 10000 1.2 1.1 1000 1st line 2nd line 1000 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) 10000 VDS - Drain-to-Source Breakdown Voltage (normalized) Axis Title 1.0 100 0.9 ID = 250 µA 10 0.8 -60 -40 -20 0 1.4 20 40 60 80 100 120 140 160 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage Axis Title 100 10000 IDM limited 10 100 µs 1000 Limited by RDS(on) a 1 1 ms 10 ms 1st line 2nd line 2nd line ID - Drain Current (A) Operation in this area limited by RDS(on) 100 0.1 BVDSS limited TC = 25 °C, TJ = 150 °C, single pulse 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S22-0794-Rev. A, 19-Sep-2022 Document Number: 92441 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840HPBF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 100 0.02 Single pulse 10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Time (s) Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 16 - Unclamped Inductive Waveforms Fig. 13 - Switching Time Test Circuit VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg 12 V 0.2 μF + - VDD 0.3 μF + IAS D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S22-0794-Rev. A, 19-Sep-2022 Document Number: 92441 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840HPBF www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92441. S22-0794-Rev. A, 19-Sep-2022 Document Number: 92441 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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