IRFB9N30APBF

IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT • Fast Switching • Ease of Paralleling • Simple Drive Requirements Single • Lead (Pb)-free Available D TO-220 DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFB9N30APbF SiHFB9N30A-E3 IRFB9N30A SiHFB9N30A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta SYMBOL LIMIT UNIT VGS ± 30 V ID IDM Linear Derating Factor 9.3 5.9 A 37 0.77 W/°C Single Pulse Avalanche Energyb EAS 160 mJ Repetitive Avalanche Currenta IAR 9.3 A Repetitive Avalanche Energya EAR 9.6 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 96 W dV/dt 4.6 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.7 mH, RG = 25 Ω, IAS = 9.3 A (see fig. 12). c. ISD ≤ 9.3 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 www.vishay.com 1 IRFB9N30A, SiHFB9N30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC 0.50 - 62 1.3 °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 300 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.38 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 300 V, VGS = 0 V - - 25 VDS = 240 V, VGS = 0 V, TJ = 125 °C - - Ω S VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance - - 250 0.45 gfs VDS = 50 V, ID = 5.6 Ab 6.6 - - VGS = 0 V, VDS = 25 V f = 1.0 MHz, see fig. 5 - 920 - - 160 - - 8.7 - VGS = 0 V, VDS = 1.0 V, f = 1.0 MHz - 1200 - RDS(on) ID = 5.6 Ab VGS = 10 V µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge Coss eff. Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-Off Delay Time Fall Time - 52 - VGS = 0 V, VDS = 0 V to 240 V - 102 - - - 33 - - 6.9 - - 12 - Qg Gate-Source Charge Rise Time VGS = 0 V, VDS = 240 V, f = 1.0 MHz tr td(off) tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 10 V ID = 9.3 A, VDS = 240 V, see fig. 6 and 13b - 10 VDD = 150 V, ID = 9.3 A - 25 - RG = 12 Ω, RD = 16 Ω, see fig. 10b - 35 - Between lead, 6 mm (0.25") from package and center of D G Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage - 29 - - 4.5 - - 7.5 - - - 9.3 - - 37 pF nC ns nH S IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D G A S TJ = 25 °C, IS = 9.3 A, VGS = 0 Vb TJ = 25 °C, IF = 9.3 A, di/dt = 100 A/µsb - - 1.5 V - 280 420 ns - 1.5 2.3 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. ia a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS www.vishay.com 2 Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 IRFB9N30A, SiHFB9N30A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 4.5V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 TJ = 25 ° C TJ = 150 ° C 10 1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.5V 20µs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 Fig. 3 - Typical Transfer Characteristics TOP 1 5.0 VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 V DS = 50V 20µs PULSE WIDTH ID = 9.3A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFB9N30A, SiHFB9N30A Vishay Siliconix 100 000 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 10 000 100 Ciss Coss 1000 100 Crss 10 1 10 TJ = 150° C TJ = 25 ° C 1 A 1 10 100 0.1 0.0 1000 VDS , Drain-to-Source Voltage (V) 0.8 1.2 1.6 Fig. 7 - Typical Source-Drain Diode Forward Voltage 100 ID = 9.3A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 240V VDS = 150V VDS = 60V 16 10us ID , D r a in C u r r e n t ( A ) VGS , Gate-to-Source Voltage (V) 0.4 VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 V GS = 0 V 12 8 10 100us 1ms 1 10ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 20 30 40 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 TC = 25 ° C TJ = 150 ° C Single Pulse 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 IRFB9N30A, SiHFB9N30A Vishay Siliconix rD 10.0 VDS VGS ID , Drain Current (A) D.U.T. rG 8.0 + - VDD 10 V 6.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4.0 Fig. 10a - Switching Time Test Circuit 2.0 90 % VDS 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS tp 15 V L VDS D.U.T. RG IAS 20 V tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFB9N30A, SiHFB9N30A 400 TOP BOTTOM ID 4.2A 5.9A 9.3A 300 200 100 0 400 V DSav , Avalanche Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 380 360 340 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current A 0 2 4 6 8 10 I av , Avalanche Current (A) Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS + QGD D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 IRFB9N30A, SiHFB9N30A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91102. Document Number: 91102 S09-0062-Rev. A, 02-Feb-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1