IRFBC40LC
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
• Ultra low gate charge
• Reduced gate drive requirement
• Enhanced 30 V, VGS rating
TO-220AB
D
• Extremely high frequency operation
• Repetitive avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
S
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
600
VGS = 10 V
Qg max. (nC)
DESCRIPTION
1.2
This new series of low charge power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
39
Qgs (nC)
10
Qgd (nC)
19
Configuration
Available
• Reduced Ciss, Coss, Crss
G
G
Available
Single
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
IRFBC40LCPbF
Lead (Pb)-free and halogen-free
IRFBC40LCPbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current a
Linear derating factor
Single pulse avalanche energy b
Repetitive avalanche current a
Repetitive avalanche energy a
Maximum power dissipation
Peak diode recovery dV/dt c
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
Mounting torque
SYMBOL
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
For 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
LIMIT
600
± 30
6.2
3.9
25
1.0
530
6.2
13
125
3.0
-55 to +150
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12)
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
S21-0868-Rev. E, 16-Aug-2021
Document Number: 91114
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum junction-to-ambient
RthJA
-
62
Case-to-sink, flat, greased surface
RthCS
0.50
-
Maximum junction-to-case (drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.70
-
V/°C
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-source leakage
IGSS
VGS = ± 20
-
-
± 100
nA
Zero gate voltage drain current
IDSS
Gate-source threshold voltage
Drain-source on-state resistance
RDS(on)
VDS = 600 V, VGS = 0 V
-
-
100
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
-
-
1.2
Ω
-
S
ID = 3.7 A b
VGS = 10 V
gfs
VDS = 100 V, ID = 3.7 A b
3.7
-
Input capacitance
Ciss
1100
-
Coss
-
140
-
Reverse transfer capacitance
Crss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
-
Output capacitance
-
15
-
-
-
39
-
-
10
Forward transconductance
μA
Dynamic
pF
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
-
-
19
Turn-on delay time
td(on)
-
12
-
tr
-
20
-
-
27
-
-
17
-
-
4.5
-
-
7.5
-
0.6
-
3.9
-
-
6.2
S
-
-
25
TJ = 25 °C, IS = 6.2 A, VGS = 0 V b
-
-
1.5
V
-
440
680
ns
-
2.1
3.2
μC
Rise time
Turn-off delay time
td(off)
Fall time
tf
Internal drain inductance
LD
Internal source inductance
LS
Gate input resistance
Rg
VGS = 10 V
ID = 6.2 A, VDS = 360 V,
see fig. 6 and 13 b
VDD = 300 V, ID = 6.2 A
Rg = 9.1 Ω, RD = 47 Ω, see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
nC
ns
nH
G
S
f = 1 MHz, open drain
Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulsed diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Forward turn-on time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
S21-0868-Rev. E, 16-Aug-2021
Document Number: 91114
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC
www.vishay.com
Vishay Siliconix
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
ID, Drain Current (A)
101
100
4.5 V
10-1
20 µs Pulse Width
TC = 25 °C
10-2
10-2
10-1
101
100
102
VDS, Drain-to-Source Voltage (V)
91114_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Top
100
2000
4.5 V
Capacitance (pF)
ID, Drain Current (A)
Fig. 4 - Normalized On-Resistance vs. Temperature
2400
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10-1
1600
Ciss
1200
Coss
800
Crss
400
20 µs Pulse Width
TC = 150 °C
10-2
10-2
100
10-1
101
0
102
VDS, Drain-to-Source Voltage (V)
91114_02
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
ID, Drain Current (A)
25 °C
100
20 µs Pulse Width
VDS = 100 V
10-1
4
91114_03
5
6
7
8
9
Fig. 3 - Typical Transfer Characteristics
ID = 5.2 A
VDS = 300 V
16
VDS = 240 V
VDS = 180 V
12
8
4
For test circuit
see figure 13
0
10
VGS, Gate-to-Source Voltage (V)
S21-0868-Rev. E, 16-Aug-2021
VGS, Gate-to-Source Voltage (V)
20
150 °C
101
VDS, Drain-to-Source Voltage (V)
91114_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
101
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
91114_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
ID = 6.2 A
VGS = 10 V
0
91114_06
8
16
24
32
40
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91114
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC
www.vishay.com
Vishay Siliconix
ISD, Reverse Drain Current (A)
7.0
101
ID, Drain Current (A)
6.0
150 °C
25 °C
5.0
4.0
3.0
2.0
1.0
VGS = 0 V
100
0.6
0.8
1.0
0.0
25
1.4
1.2
VSD, Source-to-Drain Voltage (V)
91114_07
2
125
150
RD
VDS
VGS
102
ID, Drain Current (A)
100
Fig. 9 - Maximum Drain Current vs. Case Temperature
Operation in this area limited
by RDS(on)
5
75
TC, Case Temperature (°C)
91114_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
50
D.U.T.
Rg
5
+
- VDD
10 µs
2
10
10 V
100 µs
5
2
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
1 ms
1
10 ms
5
2
Fig. 10a - Switching Time Test Circuit
0.1
TC = 25 °C
TJ = 150 °C
Single Pulse
5
2
10-2
0.1
2
5
1
2
5
10
2
2
5
102
VDS
5
103
2
5
90 %
104
VDS, Drain-to-Source Voltage (V)
91114_08
Fig. 8 - Maximum Safe Operating Area
10 %
VGS
td(on)
td(off)
tr
tf
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 − 0.5
PDM
0.2
0.1
0.1
t1
0.05
t2
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91114_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0868-Rev. E, 16-Aug-2021
Document Number: 91114
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC
www.vishay.com
Vishay Siliconix
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T.
Rg
+
- VDD
VDS
IAS
10 V
tp
0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
2.8 A
3.9 A
Bottom 5.2 A
Top
1000
800
600
400
200
0
VDD = 50 V
25
91114_12c
50
75
100
150
125
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
Qg
VGS
12 V
0.2 μF
0.3 μF
Qgs
Qgd
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S21-0868-Rev. E, 16-Aug-2021
Fig. 13b - Gate Charge Test Circuit
Document Number: 91114
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40LC
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
3
+
2
-
-
4
+
1
Rg
•
•
•
•
1 Driver gate drive
Period
P.W.
+
V
- DD
dv/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
D=
P.W.
Period
V GS = 10 V a
2
D.U.T. ISD waveform
Reverse
recovery
current
3 D.U.T. VDS
Body diode forward
current
di/dt
waveform
Diode recovery
dv/dt
Re-applied
voltage
V DD
Body diode forward drop
4 Inductor current
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91114.
S21-0868-Rev. E, 16-Aug-2021
Document Number: 91114
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
C
b
e
J(1)
e(1)
MILLIMETERS
DIM.
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
J(1)
2.41
2.92
0.095
0.115
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
Document Number: 66542
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 04-Nov-2021
Legal Disclaimer Notice
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Vishay
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Revision: 01-Jan-2022
1
Document Number: 91000