IRFZ20

IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance. In addition to this feature all have documented reliability and parts per million quality! The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ20PbF SiHFZ20-E3 IRFZ20 SiHFZ20 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltagea Gate-Source Voltagea Continuous Drain Current Pulsed Drain Currentb Single Pulse Avalanche Energyc Linear Derating Factor (see fig. 16) Maximum Power Dissipation (see fig. 16) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS TC = 25 °C for 10 s PD TJ, Tstg LIMIT 50 ± 20 15 10 60 5 0.32 40 - 55 to + 150 300 (0.063" (1.6 mm) from case UNIT V A mJ W/°C W °C Notes a. TJ = 25 °C to 150 °C b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11). c. Starting TJ = 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 1 IRFZ20, SiHFZ20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. 80 Typical Socket Mount, Junction-to-Ambient RthJA - Case-to-Sink, Mounting Surface Flat, Smooth, and Greased RthCS 1.0 - Junction-to-Case RthJC - 3.12 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static VDS VGS = 0 V, ID = 250 μA 50 - - VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA VDS > Max. Rating, VGS = 0 V - - 250 Zero Gate Voltage Drain Current IDSS VDS = Max. Rating x 0.8, VGS = 0 V, TC = 125 °C - - 1000 Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current Drain-Source On-State Resistanceb Forward Transconductanceb μA ID(on) VGS = 10 V VDS > ID(on) x RDS(on) max. - - 15 A RDS(on) VGS = 10 V ID = 10 A - 0.080 0.10  S gfs VDS > ID(on) x RDS(on) max., ID = 9.0 A 5.0 6.0 - Input Capacitance Ciss - 560 860 Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 11 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Dynamic Rise Time Turn-Off Delay Time - 250 350 - 60 100 - 12 17 - 9.0 - - 3.0 - td(on) - 15 30 tr - 45 90 - 20 40 - 15 30 - 3.5 - - 4.5 - - - 15 - - 60 - - 1.5 V - 100 - ns - 0.4 - μC td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 10 V ID = 20 A, VDS = 0.8 max. rating, see fig. 18 for test circuit (Gate charge is essentially independent of operating temperature) VDD = 25 V, ID = 9.0 A, Z0 = 50 , see fig. 5b Modified MOSFET symbol showing the internal device inductances D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltageb VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction rectifier D A G S TC = 25 °C, IS = 15 A, VGS = 0 V TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5). b. Pulse test: Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Saturation Characteristics Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration VDS tp VDD VDS IAS Fig. 12a - Clamped Inductive Test Circuit Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 13 - Typical Transconductance vs. Drain Current Fig. 14 - Breakdown Voltage vs. Temperature Fig. 16 - Power vs. Temperature Derating Curve Fig. 15 - Typical On-Resistance vs. Drain Current Fig. 17 - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91340. Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000