Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
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Vishay Semiconductors
Optocoupler, Phototriac Output, Non-Zero Crossing, 250 VDRM
FEATURES
A 1
6 MT2
C 2
5 NC
• 250 V blocking voltage
• Wide range of trigger current
• 100 mARMS on-state current
• Wide temperature range -55 °C to +100 °C
4 MT1
NC 3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
22897-1
APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
• Power TRIAC driver
3D 3D
3D Models
• Isolated AC load switch
Design Tools
Related
Documents
Models
• Air condition
Footprints
• Heaters
• White goods
Schematics
• Industrial controls
DESCRIPTION
• Office equipment
The K301xP series consists of a phototriac optically coupled
to a gallium arsenide infrared-emitting diode in a 6-lead
plastic dual inline package.
AGENCY APPROVALS
The non-zero crossing functionality enables full wave
control. Featuring galvanic and electrical noise isolation, the
output is able to directly switch AC loads or drive medium to
high power TRIACs.
• cUL
• UL
• DIN EN 60747-5-5 (VDE 0884-5)
• CQC: GB4943-1-2011
• CQC: GB8898-2011
• FIMKO
ORDERING INFORMATION
K
3
0
1
X
TRIGGER
CURRENT
IFT
PART NUMBER
AGENCY CERTIFIED / PACKAGE
7.62 mm
TRIGGER CURRENT, IFT
VDE, cUL, CQC, FIMKO
DIP-6
DIP-6
P
5 mA
15 mA
K3012P
K3010P
Note
• Additional options may be possible, please contact sales office
Document Number: 83504
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
80
mA
Forward surge current
tp ≤ 10 μs
IFSM
3
A
Pdiss
100
mW
Tj
125
°C
Off state output terminal voltage
VDRM
250
V
On state RMS current
ITRM
100
mA
Power dissipation
Junction temperature
OUTPUT
Peak surge current, non-repetitive
tp ≤ 10 ms
Power dissipation
ITMS
1.5
A
Pdiss
300
mW
Tj
125
°C
Junction temperature
COUPLER
Total power dissipation
Ptot
350
mW
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +100
°C
Tsld
260
°C
Soldering temperature
2 mm from case, t ≤ 10 s
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
-
1.25
1.6
V
VR = 0, f = 1 MHz
Cj
-
50
-
pF
Forward peak off-state voltage
(repetitive)
IRDM = 100 nA
VDRM (1)
250
-
-
V
Peak on-state voltage
ITM = 100 mA
Junction capacitance
OUTPUT
Critical rate of rise of off-state voltage
VTM
-
1.5
3
V
dV/dtcr
-
10
-
V/μs
dV/dtcrq
0.1
0.2
-
V/μs
K3010P
IFT
-
8
15
mA
K3012P
IFT
-
2
5
mA
IH
-
100
-
μA
IFT = 0, IFT = 30 mA
COUPLER (2)
Collector emitter trigger current
VS = 3 V, RL = 150 Ω
Holding current
IF = 10 mA, VS ≥ 3 V
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1) Test voltage must be applied within dV/dt ratings
(2) I
FT is defined as a minimum trigger current
Document Number: 83504
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
www.vishay.com
Vishay Semiconductors
RS
Test condition:
dV/dt cr
VS = 2/3 VDRM
(sine wave)
R L = 33 kΩ
V~
I FT
dV/dt crq
Veff. = 30 V
RL
(sine wave)
R L = 2 kΩ
95 10813
Fig. 1 - Test Circuit for dV/dtcr and dV/dtcrq
I F ≥ I FT
IF = 0
dV/dt crq
dV/dt cr
dV/dt crq
95 10814
dV/dt cr
Highest value of the “rate of rise of off-state voltage” which does not cause any switching from the
off state to the on state
Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,
after the voltage has decreased to zero and the trigger current is switched from I FT to zero
Fig. 2
SAFETY AND INSULATION RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Climatic classification
According to IEC 68 part 1
Pollution degree
According to DIN VDE 0109
Comparative tracking index
Maximum rated withstanding isolation voltage
SYMBOL
VALUE
UNIT
55 / 100 / 21
2
Insulation group IIIa
CTI
175
According to UL1577, t = 1 min
VISO
4420
VRMS
VRMS
Tested withstanding isolation voltage
According to UL1577, t = 1 s
VISO
5300
Maximum transient isolation voltage
According to DIN EN 60747-5-5
VIOTM
8000
Vpeak
Maximum repetitive peak isolation voltage
According to DIN EN 60747-5-5
VIORM
890
Vpeak
Tamb = 25 °C, VIO = 500 V
RIO
≥ 1012
Ω
Tamb = 100 °C, VIO = 500 V
RIO
≥ 1011
Ω
PSO
265
mW
Input safety current
ISI
130
mA
Input safety temperature
TS
150
°C
≥7
mm
Isolation resistance
Output safety power
Creepage distance
Clearance distance
DIP-6
Insulation thickness
Input to output test voltage, method A
VIORM x 1.6 = VPR, 100 % sample test
with tM = 10 s, partial discharge < 5 pC
≥7
mm
DTI
≥ 0.4
mm
VPR
1424
Vpeak
Note
• According to DIN EN60747-5-5 (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits
Document Number: 83504
3
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
www.vishay.com
Vishay Semiconductors
VIOTM
300
Psi (mW)
t1, t2
t3 , t4
ttest
tstres
Max. Safety Ratings
250
200
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
150
VIOWM
VIORM
Isi (mA)
100
50
0
0
0
25
50
75
100
125
t3 ttest t4
150
t1
13930
Tamb - Ambient Temperature (°C)
tTr = 60 s
t2
t stres
t
Fig. 3 - Safety Parameter Derating Diagram
Fig. 4 - Test Pulse Diagram for Sample Test according to
DIN EN60747-5-5 / DIN EN60747-; IEC 60747
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10000
Output
300
1000
1st line
2nd line
2nd line
Pdiss - Power Dissipation (mW)
Total
200
100
Input
100
I FTrel - Relative Threshold Forward Current
Axis Title
400
10
0
-60 -40 -20
0
20
40
60
1.5
1.4
1.3
VS = 3 V
R L = 150
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-30 -20 -10 0 10 20 30 40 50 60 70 80
80 100 120
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 5 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Relative Threshold Forward Current vs.
Ambient Temperature
1.5
VTMrel - Relative On-State Voltage
IF - Forward Current (mA)
1000
100
10
1
0.1
0
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
1.4
1.3
1.2
IF = I FT
I T = 100 mA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-30 -20 -10 0 10 20 30 40 50 60 70 80
Tamb - Ambient Temperature (°C)
Fig. 8 - Relative On-State vs. Ambient Temperature
Document Number: 83504
4
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
www.vishay.com
Vishay Semiconductors
100
250
I TM - On-State Current (mA)
I DRM - Off-State Current (nA)
200
V DR = 100 V
IF = 0
10
150
I FT = 15 mA
100
50
0
- 50
- 100
- 150
- 200
1
20
- 250
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
V TM - On-State Voltage (V)
Fig. 9 - Off-State Current vs. Ambient Temperature
Fig. 10 - On-State Current vs. On-State Voltage
PACKAGE DIMENSIONS (in millimeters)
DIP-6
9.00 max.
7.62 typ.
8.60 ± 0.10
6.50 ± 0.25
0.79 min.
3.10 ± 0.50
3.55 ± 0.25
0.90 min.
0.85 ± 0.10
0.50 ± 0.10
3° to 9°
0.25 ± 0.10
1.27 ± 0.10
2.54 typ.
6
5
4
1
2
3
Pin one I.D.
Document Number: 83504
5
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
www.vishay.com
Vishay Semiconductors
PACKAGE MARKING
K3010P
V YWW 68
Fig. 11 - Example of K3010P
Notes
• “YWW” is the date code marking (Y = year code, WW = week code)
• The VDE logo is only marked on option1 parts
PACKING INFORMATION (in millimeters)
Tube
528 ± 0.2
330 ± 0.5
260 ± 0.5
200 ± 0.5
150 ± 0.5
125 ± 0.5
– 1.0
30 ± 0.5
B
VISHAY OPTOSEMICONDUCTOR MADE IN MALAYSIA ANTISTATIC
Detail B
Detail A
A
– 1.0
– 1.0
3 ± 0.5
– 1.0
380 ± 1
0.7 ± 0.5
1.0 14 x
13 x 10 = 130
17996-3
Fig. 12 - Shipping Tube Specifications for DIP Packages
DEVICES PER TUBES
TYPE
UNITS/TUBE
TUBES/BOX
UNITS/BOX
DIP-6
50
40
2000
DIP-6
12 ± 0.3
B
6.6 ± 0.3
Transparent rigid PVC
2.7 ± 0.2
R
0.
1
6°
4.4 ± 0.3
0.
5
11 ± 0.3
R
0.6 ± 0.1
10°
A
// 0.2 B
Detail A
Detail B
5.7 ± 0.15
17996-4
Section A - B
Not to scale
Fig. 13 - Tube Shipping Medium
Document Number: 83504
6
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Not for New Designs - Alternative Device: VO3021, VO3022, VO3023
K3010P, K3012P
www.vishay.com
Vishay Semiconductors
SOLDER PROFILES
Axis Title
Axis Title
10000
5s
10000
300
Lead temperature
1000
ca. 2 K/s
ca. 200 K/s
150
Full line: typical
Dotted lines:
process limits
Second
wave
100 °C to
130 °C
100
100
2 K/s
50
2nd line
Temperature (°C)
200
Max. 260 °C
10
100
150
200
Max. 30 s
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
Max. ramp up 3 °C/s
Fig. 14 - Wave Soldering Double Wave Profile
According to J-STD-020 for DIP Devices
10
0
0
250
Time (s)
948626
1000
200
50
0
50
245 °C
ca. 5 K/s
Forced cooling
0
255 °C
240 °C
217 °C
250
235 °C to
260 °C
First wave
1st line
2nd line
2nd line
Temperature (°C)
250
1st line
2nd line
300
19841
50
100
150
200
250
300
Time (s)
Fig. 15 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020 for SMD Devices
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
Document Number: 83504
7
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.8, 06-Oct-2022
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
1
Document Number: 91000