MBR1090-M3/4W

MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS® • Trench MOS Schottky technology TO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. CASE PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C Package TO-220AC Diode variations Single die MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A dV/dt 10 000 V/μs TJ, TSTG -65 to +150 °C Voltage rate of change (rated VR) Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage TEST CONDITIONS IF = 10 A IF = 20 A Maximum reverse current per diode at working peak reverse voltage SYMBOL TC = 25 °C TC = 125 °C TJ = 25 °C TJ = 100 °C VALUE UNIT 0.80 VF (1) 0.65 V 0.75 IR (2) 100 μA 6.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 10-May-16 Document Number: 89193 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MBR1090 MBR10100 RJA 60 RJC 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AC PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.845 4W 50/tube Tube MBR10100-M3/4W  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 100 Instantaneous Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Case Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 160 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave Instantaneous Reverse Current (mA) Peak Forward Surge Current (A) TJ = 150 °C 10 140 120 100 80 60 TJ = 150 °C 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 40 1 10 100 10 20 30 40 50 60 70 80 90 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics 100 Revision: 10-May-16 Document Number: 89193 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR1090-M3, MBR10100-M3 www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 1000 100 10 1 10 1 MBR 0.1 0.01 100 10 Junction to Case 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) 0.380 (9.65) 0.161 (4.08) DIA. 0.139 (3.53) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 10-May-16 Document Number: 89193 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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