MBR745, MBR760, MBRF745
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
FEATURES
TO-220AC
• Power pack
ITO-220AC
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
2
1
MBR745
MBR760
1
MBRF745
PIN 1
PIN 1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
CASE
PIN 2
PIN 2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VRRM
45 V, 60 V
IFSM
150 A
VF
0.57 V, 0.65 V
TJ max.
150 °C
Package
TO-220AC, ITO-220AC
Diode variations
Single
Case: TO-220AC, ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR745
MBR760
Maximum repetitive peak reverse voltage
VRRM
45
60
Working peak reverse voltage
VRWM
45
60
Maximum DC blocking voltage
VDC
45
60
Maximum average forward rectified current (fig. 1)
IF(AV)
7.5
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
150
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
Voltage rate of change (rated VR)
dV/dt
10 000
1.0
UNIT
V
A
0.5
Operating junction temperature range
TJ
-65 to +150
Operating storage temperature range
TSTG
-65 to +175
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
VAC
1500
°C
V
Revision: 27-Nov-17
Document Number: 88680
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR745, MBR760, MBRF745
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 7.5 A
Maximum instantaneous forward voltage
VF (1)
Maximum reverse current at
DC blocking voltage
IR (2)
MBR745
MBR760
TC = 25 °C
-
0.75
IF = 7.5 A
TC = 125 °C
0.57
0.65
IF = 15 A
TC = 25 °C
0.84
-
IF = 15 A
TC = 125 °C
0.72
-
TC = 25 °C
0.1
0.5
TC = 125 °C
15
50
Rated VR
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
SYMBOL
MBR
MBRF
UNIT
RJC
3.0
5.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
(1)
TO-220AC
MBR745-E3/45
ITO-220AC
MBRF745-E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.80
45
50/tube
Tube
1.94
45
50/tube
Tube
Note
(1) 60 V device available in TO-220AC package only
Revision: 27-Nov-17
Document Number: 88680
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR745, MBR760, MBRF745
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
10
Instantaneous Reverse Current (mA)
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
2
MBR745
MBR760
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
100
50
0
0
150
20
40
60
80
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Junction Capacitance (pF)
150
125
100
75
50
1000
100
MBR745
MBR760
10
25
0.1
100
10
1
1
100
10
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
100
10
TJ = 125 °C
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
1
0.1
MBR745
MBR760
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
10 000
175
Peak Forward Surge Current (A)
MBR745
MBR760
10
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 27-Nov-17
Document Number: 88680
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR745, MBR760, MBRF745
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
PIN
1
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
2
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
PIN 1
CASE
PIN 2
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AC
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 27-Nov-17
Document Number: 88680
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2019
1
Document Number: 91000