MBRB15H45CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
D2PAK
• Power pack
(TO-263AB)
•
•
•
•
•
•
•
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
2
1
MBRB15H45CT
PIN 1
PIN 2
DESIGN SUPPORT TOOLS
K
HEATSINK
click logo to get started
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
Models
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 7.5 A
VRRM
45 V
IFSM
150 A
VF
0.55 V
IR
50 μA
TJ max.
Package
Circuit configuration
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
175 °C
D2PAK
per
Polarity: as marked
(TO-263AB)
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB15H45CT
Maximum repetitive peak reverse voltage
VRRM
45
Working peak reverse voltage
VRWM
45
Maximum DC blocking voltage
VDC
45
Maximum average forward rectified current (fig. 1)
total device
per diode
IF(AV)
15
7.5
UNIT
V
A
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH per diode
EAS
80
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated
load per diode
IFSM
150
Peak repetitive reverse surge current per diode at tp = 2.0 μs, 1 kHz
IRRM
1.0
Peak non-repetitive reverse energy (8/20 μs waveform)
ERSM
20
mJ
VC
25
kV
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
Electrostatic discharge capacitor voltage
Human body model: C = 100 F, R = 1.5 k
Voltage rate of change (rated VR)
Operating junction and storage temperature range
mJ
A
Revision: 26-Sep-2018
Document Number: 88782
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB15H45CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage per
diode
VF (1)
IR (2)
Maximum reverse current per diode
MBRB15H45CT
TEST CONDITIONS
TYP.
MAX.
IF = 7.5 A
TJ = 25 °C
-
0.63
IF = 7.5 A
TJ = 125 °C
0.50
0.55
IF = 15 A
TJ = 25 °C
-
0.75
IF = 15 A
TJ = 125 °C
0.61
0.66
Rated VR
UNIT
V
TJ = 25 °C
-
50
μA
TJ = 125 °C
3.0
10
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance per diode
SYMBOL
MBRB15H45CT
UNIT
RJC
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
MBRB15H45CTHE3_B/P (1)
1.35
P
50/tube
Tube
TO-263AB
MBRB15H45CTHE3_B/I (1)
1.35
I
800/reel
Tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
175
Peak Forward Surge Current (A)
Average Forward Current (A)
20
15
10
5
TJ = TJ max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve Per Diode
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 26-Sep-2018
Document Number: 88782
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB15H45CT
www.vishay.com
Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
TJ = 125 °C
0.1
0.01
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (mA)
10
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
0.001
TJ = 25 °C
0.1
0.01
0.0001
0
20
40
60
80
1
100
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 26-Sep-2018
Document Number: 88782
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2019
1
Document Number: 91000