MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
FEATURES
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
2
3
1
2
3
1
MBR30H100CT
MBRF30H100CT
PIN 1
PIN 2
PIN 3
CASE
PIN 1
PIN 2
PIN 3
D2PAK (TO-263AB)
K
2
1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
MBRB30H100CT
PIN 1
• Low leakage current
click logo to get started
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VRRM
100 V
Polarity: As marked
IFSM
275 A
VF
0.67 V
Mounting Torque: 10 in-lbs maximum
IR
5.0 μA
TJ max.
175 °C
Package
TO-220AC, ITO-220AC, D2PAK (TO-263AB)
Circuit configuration
Dual common cathode
per
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H100CT
Maximum repetitive peak reverse voltage
VRRM
100
Working peak reverse voltage
VRWM
100
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
(fig.1)
total device
per diode
IF(AV)
30
IFSM
275
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
IRRM
1.0
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
V
15
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
Operating junction and storage temperature range
UNIT
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Revision: 11-Jun-2018
Document Number: 88791
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF (1)
Maximum instantaneous forward voltage per diode
IR (2)
Maximum reverse current per diode
TEST CONDITIONS
VALUE
IF = 15 A
TJ = 25 °C
0.82
IF = 15 A
TJ = 125 °C
0.67
IF = 30 A
TJ = 25 °C
0.93
IF = 30 A
TJ = 125 °C
0.80
Rated VR
UNIT
V
TJ = 25 °C
5.0
μA
TJ = 125 °C
6.0
mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width, 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
1.9
4.6
1.9
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR30H100CT-E3/45
1.85
45
50/tube
Tube
ITO-220AB
MBRF30H100CT-E3/45
1.99
45
50/tube
Tube
TO-263AB
MBRB30H100CT-E3/45
1.35
45
50/tube
Tube
TO-263AB
MBRB30H100CT-E3/81
1.35
81
800/reel
Tape and reel
Revision: 11-Jun-2018
Document Number: 88791
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
10 000
Instantaneous Reverse Current (µA)
Average Forward Current (A)
35
30
25
20
MBRF30H100CT
15
10
MBR30H100CT
MBRB30H100CT
5
0
TJ = 150 °C
TJ = 125 °C
100
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0.01
0
25
50
75
100
125
150
175
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
300
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
Junction Capacitance (pF)
Peak Forward Surge Current (A)
TJ = 175 °C
1000
200
150
100
50
1000
100
10
0
1
10
0.1
100
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
TJ = 25 °C
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
1
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-Jun-2018
Document Number: 88791
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) max.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
PIN
1 2 3
0.635 (16.13)
0.625 (15.87)
0.160 (4.06)
0.140 (3.56)
0.145 (3.68)
0.135 (3.43)
0.057 (1.45)
0.045 (1.14)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
PIN
1
2
3
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 11-Jun-2018
Document Number: 88791
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000