MBRB30H45CTHE3_B/I

MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES ITO-220AB • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop 2 3 1 2 3 1 MBR30H100CT MBRF30H100CT PIN 1 PIN 2 PIN 3 CASE PIN 1 PIN 2 PIN 3 D2PAK (TO-263AB) K 2 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS MBRB30H100CT PIN 1 • Low leakage current click logo to get started For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test VRRM 100 V Polarity: As marked IFSM 275 A VF 0.67 V Mounting Torque: 10 in-lbs maximum  IR 5.0 μA TJ max. 175 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configuration Dual common cathode per     MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H100CT Maximum repetitive peak reverse voltage VRRM 100 Working peak reverse voltage VRWM 100 Maximum DC blocking voltage VDC 100 Maximum average forward rectified current  (fig.1) total device per diode IF(AV) 30 IFSM 275 Peak repetitive reverse surge current per diode  at tp = 2.0 μs, 1 kHz IRRM 1.0 Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 15 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range UNIT A dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C VAC 1500 V Revision: 11-Jun-2018 Document Number: 88791 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VF (1) Maximum instantaneous forward voltage per diode IR (2) Maximum reverse current per diode TEST CONDITIONS VALUE IF = 15 A TJ = 25 °C 0.82 IF = 15 A TJ = 125 °C 0.67 IF = 30 A TJ = 25 °C 0.93 IF = 30 A TJ = 125 °C 0.80 Rated VR UNIT V TJ = 25 °C 5.0 μA TJ = 125 °C 6.0 mA Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width,  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RJC 1.9 4.6 1.9 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR30H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF30H100CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB30H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB30H100CT-E3/81 1.35 81 800/reel Tape and reel Revision: 11-Jun-2018 Document Number: 88791 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 10 000 Instantaneous Reverse Current (µA) Average Forward Current (A) 35 30 25 20 MBRF30H100CT 15 10 MBR30H100CT MBRB30H100CT 5 0 TJ = 150 °C TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 0 25 50 75 100 125 150 175 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Derating Curve Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode 10 000 300 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 175 °C 1000 200 150 100 50 1000 100 10 0 1 10 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 11-Jun-2018 Document Number: 88791 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H100CT, MBRF30H100CT, MBRB30H100CT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 7° REF. 0.076 (1.93) REF. 45° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 2 3 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 11-Jun-2018 Document Number: 88791 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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