MBRF10100-M3/4W

MBRF1090, MBRF10100 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AC • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 2 MBRF1090 MBRF10100 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 PIN 1 TYPICAL APPLICATIONS PIN 2 For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF at IF = 10 A 0.65 V TJ max. 150 °C Package ITO-220AC Circuit configuration Single Case: ITO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRF1090 MBRF10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A dV/dt 10 000 V/μs Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -65 to +150 °C Voltage rating of change (rated VR) Revision: 22-Mar-18 Document Number: 89320 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRF1090, MBRF10100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL VALUE TC = 25 °C IF = 10 A VF (1) TC = 125 °C IF = 20 A 0.65 V 0.75 TJ = 25 °C Maximum reverse current at working peak reverse voltage UNIT 0.80 IR (2) TJ = 100 °C 100 μA 6.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRF UNIT RJC 3.5 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE ITO-220AC PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.384 4W 50/tube Tube MBRF10100-M3/4W  RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 10 160 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetititve Peak Forward Surge Current Revision: 22-Mar-18 Document Number: 89320 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRF1090, MBRF10100 www.vishay.com Vishay General Semiconductor 10 000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 1000 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.0 100 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 10 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 0.1 0.01 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 22-Mar-18 Document Number: 89320 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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