MBRF10H100CTHE3/45

MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES ITO-220AB • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current 2 3 1 2 3 1 MBR10H100CT MBRF10H100CT PIN 1 PIN 2 PIN 3 CASE PIN 1 PIN 2 PIN 3 D2PAK (TO-263AB) K 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. click logo to get started MECHANICAL DATA MBRB10H100CT K PIN 1 DESIGN SUPPORT TOOLS • High frequency operation TYPICAL APPLICATIONS 1 PIN 2 • High forward surge capability Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Models Available 2x5A Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test VRRM 100 V Polarity: as marked IFSM 150 A Mounting Torque: 10 in-lbs maximum VF 0.61 V IR 3.5 μA     PRIMARY CHARACTERISTICS IF(AV) TJ max. 175 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Common cathode per MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR10H100CT Maximum repetitive peak reverse voltage VRRM 100 Working peak reverse voltage VRWM 100 Maximum DC blocking voltage VDC 100 Maximum average forward rectified current at TC = 105 °C total device per diode IF(AV) IFSM 150 Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz IRRM 0.5 Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 10 5.0 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range UNIT A dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C VAC 1500 V Revision: 08-Jun-2018 Document Number: 88668 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VF (1) Maximum instantaneous forward voltage per diode IR (1) Maximum reverse current per diode VALUE TEST CONDITIONS IF = 5 A TJ = 25 °C UNIT 0.76 IF = 5 A TJ = 125 °C 0.61 IF = 10 A TJ = 25 °C 0.85 IF = 10 A TJ = 125 °C 0.71 TJ = 25 °C 3.5 μA TJ = 100 °C 4.5 mA Rated VR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RJC 2.2 5.2 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE MBR10H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF10H100CT-E3/45 1.79 45 50/tube Tube TO-263AB MBRB10H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB10H100CT-E3/81 1.35 81 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 12 Average Forward Current (A) MBR, MBRB 10 8 6 MBRF 4 2 Peak Forward Surge Current (A) 175 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Per Diode Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 08-Jun-2018 Document Number: 88668 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C TJ = 150 °C 10 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.1 TJ = - 40 °C 0.3 0.7 0.5 0.9 Junction to Case 10 1 MBR, MBRB 0.1 0.01 1.1 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 000 TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 20 40 60 80 10 1 MBRF 0.1 0.01 0.01 0 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 1000 100 10 0.1 1 10 100 Reverse Voltage (V)  Fig. 5 - Typical Junction Capacitance Per Diode Revision: 08-Jun-2018 Document Number: 88668 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100CT, MBRF10H100CT, MBRB10H100CT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters TO-220AB 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.145 (3.68) 0.135 (3.43) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 7° REF. 0.076 (1.93) REF. 45° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 2 3 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 08-Jun-2018 Document Number: 88668 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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