MBRF10H45-E3/45

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier TO-220AC FEATURES ITO-220AC • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability 2 2 1 1 MBR1090 MBR10100 MBRF1090 MBRF10100 PIN 1 PIN 2 PIN 1 CASE PIN 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K 2 1 MBRB1090 MBRB10100 PIN 1 PIN 2 • High frequency operation TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. K HEATSINK LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configuration Single MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 130 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -65 to +150 °C Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min Operating junction and storage temperature range V Revision: 17-Mar-2021 Document Number: 89034 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL IF = 10 A TC = 25 °C IF = 10 A TC = 125 °C IF = 20 A TC = 125 °C UNIT 0.80 VF (1) V 0.65 0.75 TJ = 25 °C Maximum reverse current per at working peak reverse voltage MAX. IR (2) TJ = 125 °C 100 µA 6.0 mA UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB RθJA 60 - 60 RθJC 2.0 3.5 2.0 Typical thermal resistance °C/W ORDERING INFORMATION (Example) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AC MBR10100-E3/4W 1.845 4W 50/tube Tube ITO-220AC MBRF10100-E3/4W 1.661 4W 50/tube Tube TO-263AB MBRB10100-E3/4W 1.384 4W 50/tube Tube TO-263AB MBRB10100-E3/8W 1.384 8W 800/reel Tape and reel PACKAGE PREFERRED P/N DELIVERY MODE RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 160 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 0 50 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 17-Mar-2021 Document Number: 89034 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 0.9 10 1 MBR(B) 0.1 0.01 1.0 0.1 1 100 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance 100 10 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 0.5 Junction to Case 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 60 50 70 80 90 100 Junction to Case 1 0.1 0.01 MBRF 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 7 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 17-Mar-2021 Document Number: 89034 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.415 (10.54) 0.380 (9.65) TO-220AC 0.161 (4.08) DIA. 0.139 (3.53) 0.113 (2.87) 0.103 (2.62) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 17-Mar-2021 Document Number: 89034 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3 www.vishay.com Vishay General Semiconductor D2PAK (TO-263AB) 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0 to 0.01 (0 to 0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Revision: 17-Mar-2021 Document Number: 89034 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: MBR10100/45 MBRB10100/31 MBRF10H45-E3/45