MBRF16H45HE3/45

MBRB16H35, MBRB16H45, MBRB16H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES D2PAK (TO-263AB) • • • • • • • • Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K 2 1 PIN 1 PIN 2 K HEATSINK LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 16 A VRRM 35 V, 45 V, 60 V IFSM 150 A VF 0.56 V, 0.62 V IR 100 μA TJ max. 175 °C Package D2PAK (TO-263AB) Circuit configuration Single MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: as marked MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB16H35 MBRB16H45 MBRB16H60 Maximum repetitive peak reverse voltage VRRM 35 45 60 Working peak reverse voltage VRWM 35 45 60 Maximum DC blocking voltage VDC 35 45 60 UNIT V Maximum average forward rectified current (fig. 1) IF(AV) 16 A Non-repetitive avalanche energy  at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 20 mJ VC 25 kV dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction and storage temperature range 1.0 1.0 A 0.5 Revision: 10-Aug-2020 Document Number: 88784 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB16H35, MBRB16H45, MBRB16H60 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage VF (1) Maximum reverse current IR (2) MBRB16H35, MBRB16H45 TEST CONDITIONS TYP. MAX. MBRB16H60 TYP. MAX. UNIT IF = 16 A TJ = 25 °C - 0.66 - 0.73 IF = 16 A TJ = 125 °C 0.52 0.56 0.58 0.62 TJ = 25 °C - 100 - 100 μA TJ = 125 °C 6.0 20 4.0 20 mA Rated VR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB16H35, MBRB16H45, MBRB16H60 UNIT RJC 1.5 °C/W Typical thermal resistance, junction to case ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE 1.33 P 50/tube Tube 1.33 I 800/reel Tape and reel (1) TO-263AB MBRB16H60HE3_B/P TO-263AB MBRB16H60HE3_B/I (1) BASE QUANTITY DELIVERY MODE Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Peak Forward Surge Current (A) Average Forward Current (A) 20 15 10 5 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 10-Aug-2020 Document Number: 88784 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB16H35, MBRB16H45, MBRB16H60 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 0.1 100 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1000 MBRB16H35, MBRB16H45 MBRB16H60 MBRB16H35, MBRB16H45 MBRB16H60 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 0.1 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 10 100 Fig. 5 - Typical Junction Capacitance 100 10 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (mA) 1 Reverse Voltage (V) TJ = 150 °C TJ = 125 °C 1 0.1 MBRB16H35, MBRB16H45 MBRB16H60 0.01 0.001 TJ = 25 °C 0.0001 0 20 40 60 80 1 0.1 0.01 100 Percent of Rated Peak Reverse Voltage (%) 0.1 1 10 t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 10-Aug-2020 Document Number: 88784 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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