MBRF2545CTHE3/45

MBR25xxCT, MBRF25xxCT, MBRB25xxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB 2 3 1 1 MBR25xxCT PIN 1 PIN 2 PIN 3 CASE 2 • • • • • • • Power pack Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 MBRF25xxCT PIN 1 PIN 2 PIN 3 TO-263AB K TYPICAL APPLICATIONS 2 For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. 1 MBRB25xxCT PIN 1 K PIN 2 HEATSINK MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 2 x 12.5 A VRRM 35 V to 60 V IFSM 150 A VF 0.73 V at 30 A, 0.65 V at 15 A Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Common cathode Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 Working peak reverse voltage VRWM 35 45 50 60 Maximum DC blocking voltage VDC 35 45 50 60 Maximum average forward rectified current  at TC = 130 °C total device per diode 25 IF(AV) V A 12.5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz IRRM Peak non-repetitive reverse energy (8/20 μs waveform) per diode ERSM 25 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 k VC 25 kV dV/dt 10 000 V/μs TJ - 65 to + 150 Storage temperature range TSTG - 65 to + 175 Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 Voltage rate of change (rated VR) Operating junction temperature range Revision: 11-Jun-13 150 A 1.0 0.5 °C V Document Number: 88675 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT, MBRB25xxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode IF = 15 A SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT TC = 25 °C - 0.75 TC = 125 °C - 0.65 0.82 - VF (1) TC = 25 °C IF = 30 A Maximum instantaneous reverse current at blocking voltage per diode TC = 125 °C 0.73 - TC = 25 °C 0.2 1.0 40 50 IR (1) TC = 125 °C V mA Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RJC 1.5 4.5 1.5 °C/W Typical thermal resistance from junction to case per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB MBR2545CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF2545CT-E3/45 1.99 45 50/tube Tube TO-263AB MBRB2545CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB2545CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR2545CT-E3/4W 1.85 4W 50/tube Tube (1) TO-220AB MBR2545CTHE3/45 1.85 45 50/tube Tube ITO-220AB MBRF2545CTHE3/45 (1) 1.99 45 50/tube Tube TO-263AB MBRB2545CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB2545CTHE3/81 (1) 1.35 81 800/reel Tape and reel Note AEC-Q101 qualified (1) Revision: 11-Jun-13 Document Number: 88675 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT, MBRB25xxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 100 Instantaneous Reverse Current (mA) Average Forward Current (A) Resistive or Inductive Load 24 18 12 6 0 100 50 TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 0 150 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 150 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ Max. 8.3 ms Single Half Sine-Wave 125 Junction Capacitance (pF) Peak Forward Surge Current (A) 10 0.001 0 100 75 50 25 1000 MBR2535CT, MBR2545CT MBR2550CT, MBR2560CT 100 0 10 1 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 TJ = 150 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 MBR2535CT, MBR2545CT MBR2550CT, MBR2560CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) MBR2535CT, MBR2545CT MBR2550CT, MBR2560CT 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 11-Jun-13 Document Number: 88675 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR25xxCT, MBRF25xxCT, MBRB25xxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.191 (4.85) 0.171 (4.35) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) Revision: 11-Jun-13 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.245 (6.22) MIN. 3 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 2 7° REF. 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 0.671 (17.04) 0.651 (16.54) PIN 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 7° REF. 0.076 (1.93) REF. 45° REF. 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 88675 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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