MBRF750HE3/45

MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier FEATURES TO-220AC • Power pack ITO-220AC • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 2 1 MBR745 MBR760 1 MBRF745 PIN 1 PIN 1 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 CASE PIN 2 PIN 2 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 7.5 A VRRM 45 V, 60 V IFSM 150 A VF 0.57 V, 0.65 V TJ max. 150 °C Package TO-220AC, ITO-220AC Diode variations Single Case: TO-220AC, ITO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR745 MBR760 Maximum repetitive peak reverse voltage VRRM 45 60 Working peak reverse voltage VRWM 45 60 Maximum DC blocking voltage VDC 45 60 Maximum average forward rectified current (fig. 1) IF(AV) 7.5 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM Voltage rate of change (rated VR) dV/dt 10 000 1.0 UNIT V A 0.5 Operating junction temperature range TJ -65 to +150 Operating storage temperature range TSTG -65 to +175 Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min VAC 1500 °C V Revision: 27-Nov-17 Document Number: 88680 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS IF = 7.5 A Maximum instantaneous forward voltage VF (1) Maximum reverse current at  DC blocking voltage IR (2) MBR745 MBR760 TC = 25 °C - 0.75 IF = 7.5 A TC = 125 °C 0.57 0.65 IF = 15 A TC = 25 °C 0.84 - IF = 15 A TC = 125 °C 0.72 - TC = 25 °C 0.1 0.5 TC = 125 °C 15 50 Rated VR UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case SYMBOL MBR MBRF UNIT RJC 3.0 5.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N (1) TO-220AC MBR745-E3/45 ITO-220AC MBRF745-E3/45 UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.80 45 50/tube Tube 1.94 45 50/tube Tube Note (1) 60 V device available in TO-220AC package only Revision: 27-Nov-17 Document Number: 88680 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 100 10 Instantaneous Reverse Current (mA) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 MBR745 MBR760 10 TJ = 125 °C 1 0.1 TJ = 75 °C 0.01 TJ = 25 °C 0.001 0 100 50 0 0 150 20 40 60 80 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = TJ Max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) 150 125 100 75 50 1000 100 MBR745 MBR760 10 25 0.1 100 10 1 1 100 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 100 10 TJ = 125 °C Pulse Width = 300 µs 1 % Duty Cycle TJ = 25 °C 1 0.1 MBR745 MBR760 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 10 000 175 Peak Forward Surge Current (A) MBR745 MBR760 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 27-Nov-17 Document Number: 88680 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR745, MBR760, MBRF745 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 1 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 CASE PIN 2 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AC 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 7° REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) Revision: 27-Nov-17 Document Number: 88680 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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