MMBD6050-E3-18

MMBD6050 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion • AEC-Q101 qualified available 1 2 • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified DESIGN SUPPORT TOOLS click logo to get started • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART MMBD6050 ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single 5AM Tape and reel VALUE UNIT MMBD6050-E3-08 or MMBD6050-E3-18 MMBD6050-HE3-08 or MMBD6050-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Continuous reverse voltage VR 70 V Forward current IF 200 mA IFSM 500 mA Ptot 225 mW Ptot 1.8 mW/°C Ptot 300 mW Ptot 2.4 mW/°C Peak forward surge current Maximum power dissipation on FR-5 board (1) Maximum power dissipation on alumina substrate (2) Derate above 25 °C Derate above 25 °C Notes (1) FR-5 = 1.0" x 0.75" x 0.062" (2) Alumina = 0.4" x 0.3" x 0.024" 99.5 % alumina THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Thermal resistance FR-5 RthJA 556 °C/W Junction to ambient alumina RthJA 417 °C/W Maximum junction temperature TEST CONDITION Tj 150 °C Storage temperature range Tstg -55 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.8, 13-Feb-18 Document Number: 85735 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMBD6050 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse breakdown voltage Forward voltage Reverse leakage current Reverse recovery time Diode capacitance TEST CONDITION SYMBOL MIN. IR = 100 μA V(BR) 70 TYP. MAX. UNIT IF = 1 mA VF 0.55 0.7 V IF = 100 mA VF 0.85 1.1 V VR = 50 V IR 100 nA IF = IR = 10 mA, iR = 1 mA trr 4 ns VR = 0 CD 2.5 pF V TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10000 rf - Dynamic Forward Resistance (Ω) 10 1 1 18861 10 IF - Forward Current (mA) Ptot - Admissible Power Dissipation ( mW ) Fig. 1 - Dynamic Forward Resistance vs. Forward Current 18889 T j = 25 ° C f = 1 kHz 1000 100 10 1 0.01 100 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( °C ) Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 18662 0.1 1 10 IF - Forward Current (mA) 100 Fig. 3 - Dynamic Forward Resistance vs. Forward Current CD (VR)/CD (0 V) - Relative Capacitance (pF) rf - Dynamic Forward Resistance (Ω) 100 T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 18664 2 4 6 8 10 VR - Reverse Voltage (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.8, 13-Feb-18 Document Number: 85735 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMBD6050 www.vishay.com Vishay Semiconductors I R - Leakage Current ( nA ) 10000 1000 100 10 VR = 20 V 1 0 20 18665 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Fig. 5 - Leakage Current vs. Junction Temperature 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 18666 10 ν= 0 ν = t p /T tp T = 1/f p I FRM t T 0.1 0.2 1 0.1 10 -5 0.5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.8, 13-Feb-18 Document Number: 85735 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MMBD6050 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Rev. 1.8, 13-Feb-18 Document Number: 85735 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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