MMSZ5225 to MMSZ5267
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Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• Standard Zener voltage tolerance is ± 5 %
with a “B” suffix (e.g.: MMSZ5225B), suffix “C”
is ± 2 % tolerance
• AEC-Q101 qualified available
DESIGN SUPPORT TOOLS
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• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Model
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
3.3 to 75
V
Test current IZT
1.7 to 20
mA
VZ specification
Thermal equilibrium
Circuit configuration
Single
Rev. 2.0, 20-Feb-18
Document Number: 85774
1
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MMSZ5225-G to MMSZ5267-G
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
MARKING
CODE
PART NUMBER
±2%
±5%
ZENER VOLTAGE
RANGE (1)
VZ at IZT1
V
NOM.
TEST
CURRENT
IZT1
IZT2
mA
REVERSE
LAEKAGE
CURRENT
IR at VR
μA
MAX.
DYNAMIC
RESISTANCE (2)
ZZ at IZT1
ZZK at IZT2
V
MAX.
TEMPERATURE
COEFFICIENT
VZ
%/°C
MAX.
TYP.
MMSZ5225-G
C.0
C0
3
20
0.25
50
1
30
1600
-0.075
MMSZ5226-G
D.6
D6
3.3
20
0.25
25
1
28
1600
-0.07
MMSZ5227-G
D.7
D7
3.6
20
0.25
15
1
24
1700
-0.065
MMSZ5228-G
D.8
D8
3.9
20
0.25
10
1
23
1900
-0.06
MMSZ5229-G
D.9
D9
4.3
20
0.25
5
1
22
2000
-0.055
MMSZ5230-G
D.0
D0
4.7
20
0.25
5
2
19
1900
± 0.030
MMSZ5231-G
E.6
E6
5.1
20
0.25
5
2
17
1600
± 0.030
MMSZ5232-G
E.7
E7
5.6
20
0.25
5
3
11
1600
0.038
MMSZ5233-G
E.8
E8
6
20
0.25
5
3.5
7
1600
0.038
MMSZ5234-G
E.9
E9
6.2
20
0.25
5
4
7
1000
0.045
MMSZ5235-G
E.0
E0
6.8
20
0.25
3
5
5
750
0.05
MMSZ5236-G
F.6
F6
7.5
20
0.25
3
6
6
500
0.058
MMSZ5237-G
F.7
F7
8.2
20
0.25
3
6.5
8
500
0.062
MMSZ5238-G
F.8
F8
8.7
20
0.25
3
6.5
8
600
0.065
MMSZ5239-G
F.9
F9
9.1
20
0.25
3
7
10
600
0.068
MMSZ5240-G
F.0
F0
10
20
0.25
3
8
17
600
0.075
MMSZ5241-G
H.6
H6
11
20
0.25
2
8.4
22
600
0.076
MMSZ5242-G
H.7
H7
12
20
0.25
1
9.1
30
600
0.077
MMSZ5243-G
H.8
H8
13
9.5
0.25
0.5
9.9
13
600
0.079
MMSZ5244-G
H.9
H9
14
9
0.25
0.1
10
15
600
0.082
MMSZ5245-G
H.0
H0
15
8.5
0.25
0.1
11
16
600
0.082
MMSZ5246-G
J.6
J6
16
7.8
0.25
0.1
12
17
600
0.083
MMSZ5247-G
J.7
J7
17
7.4
0.25
0.1
13
19
600
0.084
MMSZ5248-G
J.8
J8
18
7
0.25
0.1
14
21
600
0.085
MMSZ5249-G
J.9
J9
19
6.6
0.25
0.1
14
23
600
0.086
MMSZ5250-G
J.0
J0
20
6.2
0.25
0.1
15
25
600
0.086
MMSZ5251-G
K.6
K6
22
5.6
0.25
0.1
17
29
600
0.087
MMSZ5252-G
K.7
K7
24
5.2
0.25
0.1
18
33
600
0.087
MMSZ5253-G
K.8
K8
25
5
0.25
0.1
19
35
600
0.089
MMSZ5254-G
K.9
K9
27
4.6
0.25
0.1
21
41
600
0.09
MMSZ5255-G
K.0
K0
28
4.5
0.25
0.1
21
44
600
0.091
MMSZ5256-G
M.6
M6
30
4.2
0.25
0.1
23
49
600
0.091
MMSZ5257-G
M.7
M7
33
3.8
0.25
0.1
25
58
700
0.092
MMSZ5258-G
M.8
M8
36
3.4
0.25
0.1
27
70
700
0.093
MMSZ5259-G
M.9
M9
39
3.2
0.25
0.1
30
80
800
0.094
MMSZ5260-G
M.0
M0
43
3
0.25
0.1
33
93
900
0.095
MMSZ5261-G
N.6
N6
47
2.7
0.25
0.1
36
105
1000
0.095
MMSZ5262-G
N.7
N7
51
2.5
0.25
0.1
39
125
1100
0.096
MMSZ5263-G
N.8
N8
56
2.2
0.25
0.1
43
150
1300
0.096
MMSZ5264-G
N.9
N9
60
2.1
0.25
0.1
46
170
1400
0.097
MMSZ5265-G
N.0
N0
62
2
0.25
0.1
47
185
1400
0.097
MMSZ5266-G
P.6
P6
68
1.8
0.25
0.1
52
230
1600
0.097
MMSZ5267-G
P.7
P7
75
1.7
0.25
0.1
56
270
1700
0.098
Notes
• Maximum VF = 0.9 V, at IF = 10 mA
(1) Measured with device junction in thermal equilibrium
(2) The Zener impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the
Zener current (IZT1 or IZT2) is superimposed on IZT1 or IZT2. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units
Rev. 1.3, 20-Feb-18
Document Number: 83387
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
Axis Title
Axis Title
10
MMSZ5262
8
MMSZ5263
7
MMSZ5265
4
MMSZ5266
1st line
2nd line
5
2nd line
IZ (mA)
1000
MMSZ5264
6
100
3
40
MMSZ5240
35
MMSZ5241
30
MMSZ5242
25
MMSZ5243
20
MMSZ5244
15
MMSZ5267
2
10
1
5
0
0
20
10000
45
40
60
80
100
1000
1st line
2nd line
9
2nd line
IZ (mA)
50
10000
100
MMSZ5245
MMSZ5246
0
10
10
0
5
10
VZ (V)
2nd line
Fig. 1 - Breakdown Characteristics
Fig. 4 - Breakdown Characteristics
Axis Title
Axis Title
MMSZ5254
14
MMSZ5255
12
MMSZ5256
10
MMSZ5257
8
MMSZ5258
6
MMSZ5259
1000
2nd line
IZ (mA)
16
100
MMSZ5260
2
80
MMSZ5232
70
MMSZ5233
60
MMSZ5234
50
MMSZ5235
40
MMSZ5236
30
MMSZ5237
20
MMSZ5238
1000
100
10
MMSZ5261
0
20
40
MMSZ5239
0
10
0
10000
MMSZ5231
90
1st line
2nd line
MMSZ5253
1st line
2nd line
2nd line
IZ (mA)
100
10000
4
20
VZ (V)
2nd line
20
18
15
60
10
0
2
4
6
8
10
VZ (V)
2nd line
VZ (V)
2nd line
Fig. 2 - Breakdown Characteristics
Fig. 5 - Breakdown Characteristics
Axis Title
Axis Title
200
10000
30
10000
180
MMSZ5247
MMSZ5249
15
MMSZ5250
MMSZ5251
10
100
MMSZ5252
2nd line
IZ (mA)
1000
MMSZ5248
1st line
2nd line
2nd line
IZ (mA)
20
160
MMSZ5225
140
MMSZ5226
120
MMSZ5227
100
MMSZ5228
80
MMSZ5229
60
100
MMSZ5230
40
5
1000
1st line
2nd line
25
20
0
10
0
5
10
15
20
25
30
0
10
0
1
2
3
4
5
VZ (V)
2nd line
VZ (V)
2nd line
Fig. 3 - Breakdown Characteristics
Fig. 6 - Breakdown Characteristics
6
Rev. 1.3, 20-Feb-18
Document Number: 83387
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Vishay Semiconductors
0.10 (0.004)
0.15 (0.006)
8°
0.45 (0.018)
0.25 (0.010)
0° to
0.2 (0.008)
1 (0.039)
1.35 (0.053)
0.1 (0.004) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
2.5 (0.098)
0.85 (0.033)
3.55 (0.140)
1.40 (0.055)
3.85 (0.152)
1.7 (0.067)
0.45 (0.018)
0.65 (0.026)
0.85 (0.033)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.3, 20-Feb-18
Document Number: 83387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000