MSE1PBHM3/I

MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor Surface-Mount ESD Capability Rectifier FEATURES eSMP ® Series • Very low profile - typical height of 0.65 mm K Available • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current A Top View Bottom View • ESD capability • Meets MSL level 1, per LF maximum peak of 260 °C MicroSMP (DO-219AD) • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models General purpose, polarity protection, and rail-to-rail protection in both consumer and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 200 V, 400 V, 600 V IFSM 20 A VF at IF = 1.0 A 0.925 V IR 1 μA TJ max. 175 °C Package MicroSMP (DO-219AD) Circuit configuration Single MECHANICAL DATA Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Device marking code MSE1PB MSE1PD MSE1PG MSE1PJ SB SD SG SJ 100 200 400 600 UNIT Max. repetitive peak reverse voltage VRRM Max. average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A TJ, TSTG -55 to +175 °C Operating junction and storage temperature range V Revision: 06-Aug-2020 Document Number: 89067 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A TA = 25 °C IF = 1.0 A Max. instantaneous forward voltage VF (1) IF = 0.5 A TA = 125 °C IF = 1.0 A Max. reverse current SYMBOL TA = 25 °C Rated VR IR (2) TA = 125 °C TYP. MAX. 0.940 - 1.016 1.1 0.834 - 0.925 0.98 - 1.0 3.7 50 UNIT V μA Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 780 - ns Typical junction capacitance 4.0 V, 1 MHz CJ 5 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance MSE1PB MSE1PD MSE1PG RθJA (1) 110 RθJL (1) 30 RθJC (1) 40 MSE1PJ UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas. R θJL is measured at the terminal of cathode band. IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C, unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 kΩ H3B > 8 kV AEC-Q101-002 Machine model (contact mode) C = 200 pF, R = 0 Ω M4 > 400 V JESD22-A114 Human body model (contact mode) C = 100 pF, R = 1.5 kΩ JESD22-A115 Machine model (contact mode) C = 200 pF, R = 0 Ω Human body model (contact mode) C = 150 pF, R = 330 Ω 4 > 8 kV Human body model (air-discharge mode) (1) C = 150 pF, R = 330 Ω 4 > 15 kV IEC 61000-4-2 (2) VC 3B > 8 kV C > 400 V Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSE1PJ-M3/89A 0.006 89A 4500 7" diameter plastic tape and reel MSE1PJHM3/89A (1) 0.006 89A 4500 7" diameter plastic tape and reel MSE1PGHM3/I (1) 0.006 I 16 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 06-Aug-2020 Document Number: 89067 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 100 2nd line Instantaneous Reverse Current (µA) 1.0 0.8 0.6 0.4 TL Measured at the Cathode Band Terminal 0.2 0 10000 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 1000 TJ = 75 °C 0.1 1st line Average Forward Rectified Current (A) 1.2 TJ = 25 °C 100 0.01 TJ = -40 °C 0.001 10 0.0001 95 105 115 125 135 145 155 165 175 10 Lead Temperature (°C) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 10 1.2 D = 0.8 D = 0.5 0.8 D = 0.3 Junction Capacitance (pF) Average Power Loss (W) 1.0 D = 1.0 D = 0.2 0.6 D = 0.1 T 0.4 0.2 D = tp/T tp 0.8 1.0 1 0 0 0.2 0.4 0.6 1.2 0.1 10 100 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 10 1000 TJ = 175 °C Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 1 Average Forward Current (A) TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C TJ = 25 °C TJ = -40 °C 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Junction to Ambient 100 10 1 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 06-Aug-2020 Document Number: 89067 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MSE1PB, MSE1PD, MSE1PG, MSE1PJ www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) MicroSMP (DO-219AD) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) 0.030 (0.75) 0.022 (0.55) Mounting Pad Layout 0.079 (2.00) 0.029 (0.73) 0.025 (0.63) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 06-Aug-2020 Document Number: 89067 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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