P4KE120-E3/73

P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in unidirectional and bidirectional • 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time DO-41 (DO-204AL) • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 5.8 V to 459 V VBR unidirectional 6.8 V to 540 V VBR bidirectional 6.8 V to 440 V PPPM 400 W PD 1.5 W IFSM (unidirectional only) 40 A TJ max. 175 °C Polarity Unidirectional, bidirectional Package DO-41 (DO-204AL) DEVICES FOR BI-DIRECTION APPLICATIONS For bidirectional types, use CA suffix (e.g. P4KE440CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: DO-41 (DO-204AL), molded epoxy body over passivated chip Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note • P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for commercial grade only Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig.1) PPPM 400 W Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A PD 1.5 W IFSM 40 A VF 3.5/5.0 V TJ, TSTG -55 to +175 °C Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) Peak forward surge current 8.3 ms single half-sine wave unidirectional only (2) Maximum instantaneous forward voltage at 25 A for unidirectional only (3) Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for P4KE220A and below; V = 5.0 V for P4KE250A and above F F Revision: 16-Sep-2021 Document Number: 88365 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (μA) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 P4KE6.8A 6.45 7.14 10 5.80 P4KE7.5A 7.13 7.88 10 6.40 P4KE8.2A 7.79 8.61 10 7.02 P4KE9.1A 8.65 9.55 1.0 7.78 P4KE10A 9.5 10.5 1.0 8.55 P4KE11A 10.5 11.6 1.0 9.40 P4KE12A 11.4 12.6 1.0 10.2 P4KE13A 12.4 13.7 1.0 11.1 P4KE15A 14.3 15.8 1.0 12.8 P4KE16A 15.2 16.8 1.0 13.6 P4KE18A 17.1 18.9 1.0 15.3 P4KE20A 19.0 21.0 1.0 17.1 P4KE22A 20.9 23.1 1.0 18.8 P4KE24A 22.8 25.2 1.0 20.5 P4KE27A 25.7 28.4 1.0 23.1 P4KE30A 28.5 31.5 1.0 25.6 P4KE33A 31.4 34.7 1.0 28.2 P4KE36A 34.2 37.8 1.0 30.8 P4KE39A 37.1 41.0 1.0 33.3 P4KE43A 40.9 45.2 1.0 36.8 P4KE47A 44.7 49.4 1.0 40.2 P4KE51A 48.5 53.6 1.0 43.6 P4KE56A 53.2 58.8 1.0 47.8 P4KE62A 58.9 65.1 1.0 53.0 P4KE68A 64.6 71.4 1.0 58.1 P4KE75A 71.3 78.8 1.0 64.1 P4KE82A 77.9 86.1 1.0 70.1 P4KE91A 86.5 95.5 1.0 77.8 P4KE100A 95.0 105 1.0 85.5 P4KE110A 105 116 1.0 94.0 P4KE120A 114 126 1.0 102 P4KE130A 124 137 1.0 111 P4KE150A 143 158 1.0 128 P4KE160A 152 168 1.0 136 P4KE170A 162 179 1.0 145 P4KE180A 171 189 1.0 154 P4KE200A 190 210 1.0 171 P4KE220A 209 231 1.0 185 P4KE250A 237 263 1.0 214 P4KE300A 285 315 1.0 256 P4KE350A 333 368 1.0 300 P4KE400A 380 420 1.0 342 P4KE440A 418 462 1.0 376 P4KE480A 456 504 1.0 408 P4KE510A 485 535 1.0 434 P4KE540A 513 567 1.0 459 Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bidirectional types with V WM of 10 V and less the ID limit is doubled (4) All terms and symbols are consistent with ANSI/EEE CA62.35 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.9 2.6 2.4 2.2 1.9 1.8 1.7 1.6 1.5 1.2 1.2 1.00 0.83 0.73 0.66 0.61 0.57 0.54 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT AT VBR (%/°C) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.060 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Revision: 16-Sep-2021 Document Number: 88365 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to lead RθJL 66 Typical thermal resistance, junction to ambient LLead = 10 mm RθJA 100 UNIT °C/ W ORDERING INFORMATION (Example) PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE P4KE6.8A-E3/54 0.350 54 5500 13" diameter paper tape and reel P4KE6.8AHE3/54 (1) 0.350 54 5500 13" diameter paper tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 10 1 tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0.1 0.1 1 10 100 1000 10 000 0 1.0 3.0 2.0 td - Pulse Width (µs) 4.0 t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 10 000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current Decays to 50 % of IPPM 75 50 25 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 Measured at Zero Bias 100 Measured at Stand-Off Voltage VWM 10 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 1 10 100 1000 VBR - Breakdown Voltage (V) Fig. 4 - Typical Junction Capacitance Unidirectional Revision: 16-Sep-2021 Document Number: 88365 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) PD - Power Dissipation (%) 100 60 Hz Resistive or Inductive Load 75 50 L = 0.375" (9.5 mm) Lead Lengths 25 0 0 25 50 75 100 125 150 175 200 10 1 0.001 0.01 0.1 1 10 100 1000 TL - Lead Temperature (°C) tp - Pulse Duration (s) Fig. 5 - Power Derating Curve Fig. 7 - Typical Transient Thermal Impedance 100 Peak Forward Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave 10 1 10 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Forward Surge Current Unidirectional Only Revision: 16-Sep-2021 Document Number: 88365 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-41 (DO-204AL) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Revision: 16-Sep-2021 Document Number: 88365 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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