P6SMB400AHE3_A/H

P6SMB Series www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in unidirectional and bidirectional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate Available (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) Cathode Anode (unidirectional) Available (bidirectional) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. PRIMARY CHARACTERISTICS VWM (unidirectional) 5.8 V to 459 V VWM (bidirectional) 5.8 V to 185 V VBR (unidirectional) 6.8 V to 540 V VBR (bidirectional) 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (unidirectional only) 100 A MECHANICAL DATA TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) DEVICES FOR BIDIRECTION APPLICATIONS For bidirectional devices use CA suffix (e.g. P6SMB10CA). Electrical characteristics apply in both directions. Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the band denotes cathode end, no marking on bidirectional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 μs waveform SYMBOL (1)(2) (fig. 1) VALUE UNIT W PPPM 600 Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A Power dissipation on infinite heatsink at TA = 50 °C PD 5.0 W Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2) Operating junction and storage temperature range IFSM 100 A TJ, TSTG -65 to +150 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 29-Sep-2022 Document Number: 88370 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P6SMB Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PART NUMBER DEVICE MARKING CODE UNI BI BREAKDOWN STAND-OFF VOLTAGE TEST VBR AT IT (1) CURRENT VOLTAGE VWM (V) IT (V) (mA) MIN. MAX. 6V8A 6V8C 6.45 7.14 10 5.80 P6SMB6.8A 7V5A 7V5C 7.13 7.88 10 6.40 P6SMB7.5A 8V2A 8V2C 7.79 8.61 10 7.02 P6SMB8.2A 9V1A 9V1C 8.65 9.55 1.0 7.78 P6SMB9.1A 10A 10C 9.50 10.5 1.0 8.55 P6SMB10A 11A 11C 10.5 11.6 1.0 9.40 P6SMB11A 12A 12C 11.4 12.6 1.0 10.2 P6SMB12A 13A 13C 12.4 13.7 1.0 11.1 P6SMB13A 15A 15C 14.3 15.8 1.0 12.8 P6SMB15A 16A 16C 15.2 16.8 1.0 13.6 P6SMB16A 18A 18C 17.1 18.9 1.0 15.3 P6SMB18A 20A 20C 19.0 21.0 1.0 17.1 P6SMB20A 22A 22C 20.9 23.1 1.0 18.8 P6SMB22A 24A 24C 22.8 25.2 1.0 20.5 P6SMB24A 27A 27C 25.7 28.4 1.0 23.1 P6SMB27A 30A 30C 28.5 31.5 1.0 25.6 P6SMB30A 33A 33C 31.4 34.7 1.0 28.2 P6SMB33A 36A 36C 34.2 37.8 1.0 30.8 P6SMB36A 39A 39C 37.1 41.0 1.0 33.3 P6SMB39A 43A 43C 40.9 45.2 1.0 36.8 P6SMB43A 47A 47C 44.7 49.4 1.0 40.2 P6SMB47A 51A 51C 48.5 53.6 1.0 43.6 P6SMB51A 56A 56C 53.2 58.8 1.0 47.8 P6SMB56A 62A 62C 58.9 65.1 1.0 53.0 P6SMB62A 68A 68C 64.6 71.4 1.0 58.1 P6SMB68A 75A 75C 71.3 78.8 1.0 64.1 P6SMB75A 82A 82C 77.9 86.1 1.0 70.1 P6SMB82A 91A 91C 86.5 95.5 1.0 77.8 P6SMB91A 100A 100C 95.0 105 1.0 85.5 P6SMB100A 110A 110C 105 116 1.0 94.0 P6SMB110A 120A 120C 114 126 1.0 102 P6SMB120A 130A 130C 124 137 1.0 111 P6SMB130A 150A 150C 143 158 1.0 128 P6SMB150A 160A 160C 152 168 1.0 136 P6SMB160A 170A 170C 162 179 1.0 145 P6SMB170A 180A 180C 171 189 1.0 154 P6SMB180A 200A 200C 190 210 1.0 171 P6SMB200A 220A 220C 209 231 1.0 185 P6SMB220A 250A 237 263 1.0 214 P6SMB250A 300A 285 315 1.0 256 P6SMB300A 350A 333 368 1.0 300 P6SMB350A 400A 380 420 1.0 342 P6SMB400A 440A 418 462 1.0 376 P6SMB440A 480A 456 504 1.0 408 P6SMB480A 510A 485 535 1.0 434 P6SMB510A 540A 513 567 1.0 459 P6SMB540A Notes (1) Pulse test: t ≤ 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types with V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE CA62.35 (5) V = 3.5 V at I = 50 A (unidirectional only) F F MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (μA) 1000 500 200 50 10 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.8 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.9 3.6 3.4 2.9 2.7 2.6 2.4 2.2 1.8 1.74 1.45 1.24 1.10 1.00 0.91 0.86 0.81 MAXIMUM MAXIMUM CLAMPING TEMPERATURE COEFFICIENT VOLTAGE OF VBR AT IPPM VC (V) (%/°C) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.088 0.090 0.092 0.094 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.108 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Revision: 29-Sep-2022 Document Number: 88370 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P6SMB Series www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient air (1) RθJA 100 Typical thermal resistance, junction to lead RθJL 20 UNIT °C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) VOLTAGE RANGE (V) UNI BI PACKAGE CODE BASE QUANTITY DELIVERY MODE 7" diameter plastic tape and reel P6SMB6.8A-E3/52 0.096 6.8 to 220 6.8 to 220 52 750 P6SMB6.8A-M3/52 0.096 6.8 to 540 6.8 to 220 52 750 7" diameter plastic tape and reel P6SMB6.8A-E3/5B 0.096 6.8 to 220 6.8 to 220 5B 3200 13" diameter plastic tape and reel P6SMB6.8A-M3/5B 0.096 6.8 to 540 6.8 to 220 5B 3200 13" diameter plastic tape and reel 0.096 6.8 to 220 6.8 to 220 H 750 7" diameter plastic tape and reel 0.096 6.8 to 220 6.8 to 220 I 3200 13" diameter plastic tape and reel P6SMB250AHM3_D/H (2) 0.096 250 to 540 - H 750 7" diameter plastic tape and reel P6SMB250AHM3_D/I (2) 0.096 250 to 540 - I 3200 13" diameter plastic tape and reel P6SMB6.8AHE3_B/H (1) P6SMB6.8AHM3_B/H (1) P6SMB6.8AHE3_B/I (1) P6SMB6.8AHM3_B/I (1) Notes _B is available for P6SMB6.8(C)A to P6SMB220(C)A, AEC-Q101 qualified (2) _D is available for P6SMB250A to P6SMB540A, AEC-Q101 qualified (1) Revision: 29-Sep-2022 Document Number: 88370 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P6SMB Series www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 6000 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional Bi-Directional 10 10 ms 1 10 100 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (°C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (°C) tp - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 29-Sep-2022 Document Number: 88370 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P6SMB Series www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 29-Sep-2022 Document Number: 88370 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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