SBL3030PT, SBL3040PT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
3
• High forward surge capability
2
• High frequency operation
1
TO-3P (TO-247AD)
PIN 1
PIN 2
PIN 3
CASE
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
30 V, 40 V
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
IFSM
275 A
VF
0.55 V
TJ max.
125 °C
Package
TO-3P (TO-247AD)
Circuit configuration
Common cathode
MECHANICAL DATA
Case: TO-3P (TO-247AD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL3030PT
SBL3040PT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum RMS voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
275
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +125
°C
40
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum instantaneous forward voltage
per diode
VF (1)
Maximum instantaneous reverse current at rated
DC blocking voltage per diode
IR (1)
TEST CONDITIONS
15 A
SBL3030PT
SBL3040PT
UNIT
0.55
V
TC = 25 °C
1.0
mA
TC = 100 °C
75
mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 27-May-2020
Document Number: 88732
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL3030PT, SBL3040PT
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Thermal resistance, junction to case per diode
SBL3030PT
SBL3040PT
RJC
UNIT
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-247AD
SBL3030PT-E3/45
6.13
45
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
30
Instantaneous Forward Current (A)
100
Average Forward Current (A)
Resistive or Inductive Load
24
18
12
6
Pulse Width = 300 µs
1 % Duty Cycle
10
1
TJ = 25 °C
0.1
0.01
0
0
100
50
150
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
300
100
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)
TJ = 125 °C
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
250
200
150
100
50
TJ = 125 °C
10
TJ = 75 °C
1
0.1
TJ = 25 °C
0.01
0
1
10
100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 27-May-2020
Document Number: 88732
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBL3030PT, SBL3040PT
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
10
1
100
0.1
1
0.1
0.01
100
10
1
0.1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3P (TO-247AD)
0.645 (16.4)
0.625 (15.9)
0.245 (6.2)
0.225 (5.7)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.078 (1.98) REF.
10
0.170
(4.3)
0.840 (21.3)
0.142 (3.6)
0.138 (3.5)
0.820 (20.8)
1
2
10° TYP.
Both Sides
3
1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.160 (4.1)
0.140 (3.5)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.795 (20.2)
0.775 (19.6)
0.048 (1.22)
0.044 (1.12)
0.225 (5.7)
0.205 (5.2)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 2
PIN 3
CASE
Revision: 27-May-2020
Document Number: 88732
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000