SD103A-TR

SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems • These diodes are also available in the SOD-123 and SOD-323 case with type designations SD103AW(S) to SD103CW(S), and in the MiniMELF case with type designations LL103A thru LL103C • For general purpose application • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA APPLICATIONS Case: DO-35 (DO-204AH) • • • • Weight: approx. 125 mg Cathode band color: black Packaging codes/options: HF-detector Protection circuit Small battery charger AC/DC, DC/DC converters TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS SD103A VR = 40 V SD103A-TR or SD103A-TAP SD103A Single Tape and reel/ammopack SD103B VR = 30 V SD103B-TR or SD103B-TAP SD103B Single Tape and reel/ammopack SD103C VR = 20 V SD103C-TR or SD103C-TAP SD103C Single Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Peak inverse voltage PART SYMBOL VALUE UNIT SD103A VR 40 V SD103B VR 30 V SD103C VR 20 V Ptot 400 mW IFSM 15 A SYMBOL VALUE UNIT RthJA 310 K/W Tj 125 °C Tstg -55 to +150 °C Power dissipation (infinite heat sink) (1) Peak forward surge current tp = 300 μs square pulse Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Storage temperature range Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Rev. 2.0, 16-Nov-2021 Document Number: 85754 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse breakdown voltage PART SYMBOL MIN. SD103A V(BR) 40 V SD103B V(BR) 30 V SD103C V(BR) 20 SD103A IR 5 μA VR = 20 V SD103B IR 5 μA VR = 10 V SD103C IR 5 μA VF 370 mV 600 mV IR = 50 μA VR = 30 V Leakage current IF = 20 mA Forward voltage drop Diode capacitance Reverse recovery time TYP. MAX. UNIT V IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 100 IR - Reverse Current (µA) IF - Forward Current (mA) 1000 10 1 0.1 0.01 1000 100 10 0.001 1 0 100 200 300 400 500 600 700 800 900 1000 0 16767 VF - Forward Voltage (mV) 16765 Fig. 1 - Forward Current vs. Forward Voltage 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Fig. 3 - Reverse Current vs. Junction Temperature 5 30 CD - Diode Capacitance (pF) IF - Forward Current (A) f = 1 MHz 4 3 2 1 25 20 15 10 5 0 0 0.0 16766 0.5 1.0 1.5 0 2.0 VF - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage 16768 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.0, 16-Nov-2021 Document Number: 85754 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors Itot - Typ. Non Repetitve Forward Surge Current (A) 25 20 15 10 5 0 0.1 1.0 10.0 tP - Pulse width (ms) 16769 Fig. 5 - Typical Non-Repetitive Forward Surge Current vs. Pulse Width PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.0, 16-Nov-2021 Document Number: 85754 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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