SD103CW-G3-08

SD103AW-G, SD103BW-G, SD103CW-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems DESIGN SUPPORT TOOLS click logo to get started Models Available • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • For general purpose applications Case: SOD-123 • AEC-Q101 qualified available  (part number on request) Weight: approx. 9.4 mg • Base P/N-G3 - green, commercial grade Cathode band color: black • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Packaging codes/options:   18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART SD103AW-G ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING Single Z6 SD103AW-G3-08 or SD103AW-G3-18 SD103BW-G SD103BW-G3-08 or SD103BW-G3-18 Single Z7 SD103CW-G SD103CW-G3-08 or SD103CW-G3-18 Single Z8 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Forward continuous current PART SYMBOL VALUE UNIT SD103AW-G VRRM 40 V SD103BW-G VRRM 30 V SD103CW-G VRRM 20 V (1) IF 350 mA Ptot 400 mW IFSM 2 A SYMBOL VALUE UNIT RthJA 300 K/W Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -55 to +150 °C Power dissipation (infinite heat sink) (1) Single cycle surge 10 μs square wave Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.8, 22-Feb-18 Document Number: 85160 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD103AW-G, SD103BW-G, SD103CW-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MAX. UNIT VR = 30 V SD103AW-G IR 5 μA μA Leakage current SD103BW-G IR 5 VR = 10 V SD103CW-G IR 5 μA VF 370 mV 600 mV IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns Diode capacitance Reverse recovery time TYP. VR = 20 V IF = 20 mA Forward voltage drop MIN. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 1000 IR - Reverse Current (µA) I F - Forward Current (mA) Tamb = 125 °C 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 50 °C 1 25 °C 0.1 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 5 tp = 300 ms 4 C D - Diode Capacitance (pF) I F - Forward Current (A) 75 °C 10 20084 Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage duty cycle = 2 % 3 2 1 10 1 0 0 18489 100 °C 0.01 0 1.0 VF - Forward Voltage (V) 18488 100 0.5 1.0 0 1.5 VF - Forward Voltage (V) Fig. 2 - Typical High Current Forward Conduction Curve 18491 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.8, 22-Feb-18 Document Number: 85160 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SD103AW-G, SD103BW-G, SD103CW-G www.vishay.com Vishay Semiconductors VR - Reverse Voltage (V) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 0 100 200 Tamb - Ambient Temperature (°C) 18492 Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.40 (0.055) 3.85 (0.152) 1.7 (0.067) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.8, 22-Feb-18 Document Number: 85160 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000