SI1034X-T1-GE3

Si1034X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.5 V Rated • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V • Compliant to RoHS Directive 2002/95/EC SC-89 BENEFITS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code: L Top View • • • • • Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS Ordering Information: Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Currentb IS Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) TA = 25 °C TA = 85 °C PD V 190 180 140 130 IDM Continuous Source Current (Diode Conduction) Maximum Power Dissipationa ID Unit 650 450 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S10-2544-Rev. C, 08-Nov-10 www.vishay.com 1 Si1034X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit 1.2 V VDS = 0 V, VGS = ± 2.8 V VDS = VGS, ID = 250 µA 0.40 ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0 VDS = 16 V, VGS = 0 V 1 500 Static VGS(th) Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State VDS = 16 V, VGS = 0 V, TJ = 85 °C VDS = 5 V, VGS = 4.5 V RDS(on) Resistancea 10 5 VGS = 2.5 V, ID = 175 mA 7 VGS = 1.8 V, ID = 150 mA 9 VDS = 10 V, ID = 200 mA Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V µA mA VGS = 4.5 V, ID = 200 mA gfs nA 250 VDS = 1.5 V, ID = 40 mA Forward Transconductancea µA  10 0.5 S 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 750 VDS = 10 V, VGS = 4.5 V, ID = 150 mA 50 VDD = 10 V, RL = 47  ID  200 mA, VGEN = 4.5 V, Rg = 10  tr Rise Time td(off) Turn-Off Delay Time pC 75 225 25 tf Fall Time ns 50 25 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 600 0.5 TJ = - 55 °C VGS = 5 V thru 1.8 V 500 I D - Drain Current (mA) I D - Drain Current (A) 0.4 0.3 0.2 0.1 25 °C 400 125 °C 300 200 100 1V 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71427 S10-2544-Rev. C, 08-Nov-10 Si1034X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 40 80 30 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 20 VGS = 1.8 V Ciss 60 40 10 Coss 20 VGS = 2.5 V VGS = 4.5 V 0 50 100 150 200 0 250 4 8 12 16 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.60 VDS = 10 V ID = 150 mA 4 1.40 3 2 VGS = 4.5 V ID = 200 mA (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Crss 0 0 1 1.20 VGS = 1.8 V ID = 175 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 - 50 0.8 - 25 Q g - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 1000 ID = 200 mA R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 40 ID = 175 mA 30 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71427 S10-2544-Rev. C, 08-Nov-10 6 www.vishay.com 3 Si1034X Vishay Siliconix 0.3 3.0 0.2 2.5 ID = 0.25 mA 2.0 0.1 IGSS - (µA) VGS(th) Variance (V) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 2.8 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) IGSS vs. Temperature Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 25 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10-2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71427. www.vishay.com 4 Document Number: 71427 S10-2544-Rev. C, 08-Nov-10 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000