SI1965DH-T1-E3

Si1965DH www.vishay.com Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Single D 6 • TrenchFET® power MOSFET S 4 D 5 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 1 D Top View 2 D Available • Load switch for portable devices 3 G S1 S2 Marking Code: DE G1 G2 PRODUCT SUMMARY VDS (V) -12 RDS(on) max. () at VGS = -4.5 V 0.390 RDS(on) max. () at VGS = -2.5 V 0.535 RDS(on) max. () at VGS = -1.8 V 0.710 Qg typ. (nC) ID (A) d Configuration D1 D2 P-Channel MOSFET P-Channel MOSFET 1.7 -1.3 Dual ORDERING INFORMATION Package SC70-6 Lead (Pb)-free Si1965DH-T1-E3 Lead (Pb)-free and halogen-free Si1965DH-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage VGS ±8 TC = 70 °C -1.2 ID TA = 25 °C -1.14 b, c -0.9 b, c TA = 70 °C Pulsed drain current IDM TC = 25 °C Continuous source-drain diode current -1 -0.6 b, c TC = 25 °C 1.25 TC = 70 °C 0.8 PD TA = 25 °C W 0.74 b, c 0.47 b, c TA = 70 °C Operating junction and storage temperature range A -3 IS TA = 25 °C Maximum power dissipation V -1.3 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t5s RthJA 130 170 Maximum junction-to-foot (drain) Steady state RthJF 80 100 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 220 °C/W S10-0792-Rev. B, 05-Apr-10 Document Number: 68765 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1965DH www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -12 - - V - -14 - - 2 Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1.0 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance Forward transconductance a a VDS = -12 V, VGS = 0 V - - -1 VDS = -12 V, VGS = 0 V, TJ = 85 °C - - -10 ID(on) VDS  -5 V, VGS = -4.5 V -3 - - VGS = -4.5 V, ID = -1.0 A - 0.315 0.390 RDS(on) VGS = -2.5 V, ID = -0.86 A - 0.425 0.535 VGS = -1.8 V, ID = -0.25 A - 0.550 0.710 VDS = -6 V, ID = -1.0 A - 2.5 - - 120 - VDS = -6 V, VGS = 0 V, f = 1 MHz - 41 - - 25 - - 2.8 4.2 - 1.7 2.6 VDS = -6 V, VGS = -4.5 V, ID = -1.1 A - 0.3 - - 0.4 - f = 1 MHz - 7.5 - - 12 20 gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -6 V, VGS = -8 V, ID = -1.1 A td(on) tr - 27 40 - 15 25 tf - 10 15 td(on) - 2 5 VDD = -6 V, RL = 6.7 ID  -0.9 A, VGEN = -4.5 V, Rg = 1  td(off) VDD = -6 V, RL = 6.7  ID  -0.9 A, VGEN = -8 V, Rg = 1  tr td(off) tf - 12 20 - 12 20 - 10 15 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -0.9 A IF = -0.9 A, dI/dt = 100 A/μs, TJ = 25 °C - - -1.0 - - -3.0 - -0.8 -1.2 V - 20 40 ns - 10 20 nC - 9.5 - - 11.5 - A ns Notes a. Pulse test; pulse width 300 μs, duty cycle  2% b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0792-Rev. B, 05-Apr-10 Document Number: 68765 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1965DH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 1.0 VGS = 5 V thru 2.5 V 0.8 2.0 I D - Drain Current (A) I D - Drain Current (A) 2.5 VGS = 2 V 1.5 1.0 VGS = 1.5 V 0.6 TC = 25 °C 0.4 TC = 125 °C 0.2 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 1.0 200 0.8 160 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 1.8 V 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 0.2 1.0 Ciss 120 80 Coss 40 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 ID - Drain Current (A) 9 12 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 8 1.5 ID = 1.1 A 1.4 VGS = 4.5 V; 2.5 V; ID = 1 A VDS = 6 V 4 VDS = 9.6 V 2 1.3 (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 1.2 1.1 VGS = 1.8 V; ID = 0.14 A 1.0 0.9 0.8 0 0.0 0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC) Gate Charge S10-0792-Rev. B, 05-Apr-10 2.5 3.0 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68765 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1965DH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 10 0.1 0.0 VGS(th) (V) R DS(on) - On-Resistance (Ω) TJ = 150 °C TJ = 25 °C 1 0.6 TJ = 125 °C 0.4 TJ = 25 °C 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 5 0.7 4 0.6 ID = 250 µA 0.5 0.4 0.3 - 50 1 VSD - Source-to-Drain Voltage (V) Power (W) I S - Source Current (A) ID = 1 A 0.8 3 2 1 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 10 I D - Drain Current (A) Limited by RDS(on)* 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S10-0792-Rev. B, 05-Apr-10 Document Number: 68765 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1965DH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.4 2.0 1.2 1.2 Power Dissipation (W) I D - Drain Current (A) 1.6 Package Limited 0.8 1.0 0.8 0.6 0.4 0.4 0.2 0.0 0.0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Foot 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S10-0792-Rev. B, 05-Apr-10 Document Number: 68765 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1965DH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 220 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68765. S10-0792-Rev. B, 05-Apr-10 Document Number: 68765 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION 87 (mil) 26 (mil) The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the dual-channel version. 6 5 96 (mil) 71 (mil) 48 (mil) 23 (mil) 61 (mil) 1 PIN-OUT 4 2 3 0.0 (mil) Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device. 26 (mil) 16 (mil) FIGURE 2. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended. Increasing the drain pad pattern (Figure 2) yields a reduction in thermal resistance and is a preferred footprint. Document Number: 71405 12-Dec-03 8 (mil) SC-70 (6 leads) Dual EVALUATION BOARD FOR THE DUALCHANNEL SC70-6 The 6-pin SC-70 evaluation board (EVB) shown in Figure 3 measures 0.6 in. by 0.5 in. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows for examination from the outer pins to the 6-pin DIP connections, permitting test sockets to be used in evaluation testing. The thermal performance of the dual 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was then repeated using the 1-inch2 PCB with dual-side copper coating. A helpful way of displaying the thermal performance of the 6-pin SC-70 dual copper leadframe is to compare it to the traditional Alloy 42 version. www.vishay.com 1 AN816 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 S1 D1 G1 G2 D2 S2 vishay.com SC70−6 DUAL FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) COOPER LEADFRAME Room Ambient 25 _C Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the drain lead of the device as it connects with the body. The junction-to-foot thermal resistance for this device is typically 80_C/W, with a maximum thermal resistance of approximately 100_C/W. This data compares favorably with another compact, dual-channel package – the dual TSOP-6 – which features a typical thermal resistance of 75_C/W and a maximum of 90_C/W. PD + Elevated Ambient 60 _C T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 224 CńW o o P D + 150 Co* 60 C 224 CńW P D + 558 mW P D + 402 mW Although they are intended for low-power applications, devices in the 6-pin SC-70 dual-channel configuration will handle power dissipation in excess of 0.5 W. TESTING Power Dissipation The typical RθJA for the dual-channel 6-pin SC-70 with a copper leadframe is 224_C/W steady-state, compared to 413_C/W for the Alloy 42 version. All figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at varying ambient temperatures. To further aid the comparison of copper and Alloy 42 leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin SC-70 thermal performance on two different board sizes and pad patterns. The measured steady-state values of RθJA for the dual 6-pin SC-70 with varying leadframes are as follows: LITTLE FOOT 6-PIN SC-70 1) Minimum recommended pad pattern on the EVB board (see Figure 3). Alloy 42 Leadframe 1-inch2 2) Industry standard PCB with maximum copper both sides. ALLOY 42 LEADFRAME Room Ambient 25 _C PD + T J(max) * T A PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 413 CńW o o P D + 150 Co* 60 C 413 CńW P D + 303 mW P D + 218 mW www.vishay.com 2 Rq JA Elevated Ambient 60 _C Alloy 42 Copper 518_C/W 344_C/W 413_C/W 224_C/W The results indicate that designers can reduce thermal resistance (θJA) by 34% simply by using the copper leadframe device as opposed to the Alloy 42 version. In this example, a 174_C/W reduction was achieved without an increase in board area. If an increase in board size is feasible, a further 120_C/W reduction can be obtained by utilizing a 1-inch2. PCB area. The Dual copper leadframe versions have the following suffix: Dual: Compl.: Si19xxEDH Si15xxEDH Document Number: 71405 12-Dec-03 AN816 500 500 400 400 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix 300 Alloy 42 200 Copper 100 300 Alloy 42 200 100 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Dual SC70-6 Comparison on 1-inch2 PCB www.vishay.com 3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000