SI4122DY-T1-GE3

Si4122DY www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES SO-8 Single D 8 D 7 D 6 D 5 • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 S 2 S 3 S APPLICATIONS 4 G D • DC/DC conversion PRODUCT SUMMARY G VDS (V) 40 RDS(on) max. () at VGS = 10 V 0.0045 RDS(on) max. () at VGS = 4.5 V 0.0060 Qg typ. (nC) ID (A) a Configuration S 29 N-Channel MOSFET 27.2 Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4122DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 25 TC = 25 °C 20.1 ID TA = 25 °C 19.2 b, c 15.3 b, c TA = 70 °C Pulsed drain current IDM TC = 25 °C Continuous source-drain diode current L = 0.1 mH Avalanche energy 5.4 2.7 b, c IAS 40 EAS 80 TC = 25 °C 3.3 PD TA = 25 °C W 3 b, c 1.9 b, c TA = 70 °C Operating junction and storage temperature range mJ 6 TC = 70 °C Maximum power dissipation A 70 IS TA = 25 °C Single pulse avalanche current V 27.2 TC = 70 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, d t  10 s RthJA 33 42 Maximum junction-to-foot (drain) Steady state RthJF 16 21 UNIT °C/W Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. Maximum under steady state conditions is 85 °C/W S-81220-Rev. A, 02-Jun-08 Document Number: 68665 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4122DY www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - V - 43 - - -6 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS , ID = 250 μA 1.2 - 2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 25 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 30 - - A  VGS = 10 V, ID = 15 A - 0.0036 0.0045 VGS = 4.5 V, ID = 10 A - 0.0048 0.0060 VDS = 15 V, ID = 15 A - 65 - - 4200 - - 475 - - 225 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 10 A - 62 95 - 29 44 VDS = 20 V, VGS = 4.5 V, ID = 10 A - 12 - - 9 - f = 1 MHz 0.2 1 2 - 42 70 - 34 60 td(on) Rise time tr Turn-off delay time td(off) Fall time Turn-on delay time Rise time - 45 75 tf - 28 45 td(on) - 14 25 tr Turn-off delay time td(off) Fall time VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf pF nC  ns - 10 20 - 35 60 - 9 18 - - 5.4 - - 70 - 0.72 1.1 V - 31 50 ns - 31 50 nC - 18 - - 13 - Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current a Body diode voltage IS TC = 25 °C ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb IS = 3 A IF = 5 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-81220-Rev. A, 02-Jun-08 Document Number: 68665 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4122DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 5 VGS = 10 thru 4 V 4 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 3 2 TC = 25 °C 1 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6600 5500 0.0054 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.0060 0.0048 0.0042 VGS = 10 V Ciss 4400 3300 2200 Coss 0.0036 1100 0.0030 Crss 0 0 14 28 42 56 70 0 8 16 24 32 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 40 1.8 VGS = 10 V ID = 15 A VDS = 10 V ID = 10 A 8 VDS = 20 V 6 VDS = 30 V 4 2 0 0 13 26 39 52 65 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1 VGS = 4.5 V 1.2 0.9 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S-81220-Rev. A, 02-Jun-08 Document Number: 68665 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4122DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 ID = 10 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.016 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 - 0.1 ID = 5 mA - 0.4 Power (W) VGS(th) Variance (V) 0.001 0.0 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 TJ - Temperature (°C) 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S-81220-Rev. A, 02-Jun-08 Document Number: 68665 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4122DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 I D - Drain Current (A) 24 18 12 6 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.5 2.0 6.0 1.6 4.5 1.2 Power (W) Power (W) Current Derating a 3.0 1.5 0.8 0.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S-81220-Rev. A, 02-Jun-08 Document Number: 68665 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4122DY www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68665. S-81220-Rev. A, 02-Jun-08 Document Number: 68665 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000