SI4456DY-T1-E3

Si4456DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0038 at VGS = 10 V 33 0.0045 at VGS = 4.5 V 31 VDS (V) 40 Qg (Typ.) 37.5 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Secondary Rectification • Point of Load SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 40 ± 20 33 27 23b, c 18b, c 70 7.0 3.0b, c 40 80 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4456DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C -7 1.5 2.8 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS = ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A 30 0.0038 VGS = 4.5 V, ID = 15 A 0.0037 0.0045 VDS = 15 V, ID = 20 A 110 5670 VDS = 20 V, VGS = 0 V, f = 1 MHz 621 pF 287 VDS = 20 V, VGS = 10 V, ID = 20 A 81 122 37.5 57 VDS = 20 V, VGS = 4.5 V, ID = 20 A 17 f = 1 MHz 1.05 1.6 145 220 208 320 nC 11 VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 85 tf 15 23 td(on) 21 32 58 90 tr Ω S 56 td(off) µA A 0.0031 td(on) td(off) V 54 VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf 55 85 8 15 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 7 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 IS = 3 A IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.71 1.1 V 38 60 ns 42 65 nC ns 21 17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 70 1.2 VGS = 10 V thru 4 V 0.9 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 0.6 TC = 25 °C 0.3 14 VGS = 3 V 0 0.0 TC = 125 °C TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0045 7000 0.0041 5600 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) Ciss 0.0037 0.0033 4200 2800 VGS = 10 V 0.0029 1400 Coss Crss 0 0.0025 0 10 20 30 40 50 0 60 8 16 32 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.6 ID = 20 A VGS = 10 V, ID = 20 A 8 VDS = 10 V VDS = 20 V 6 VDS = 30 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 1.2 VGS = 4.5 V, ID = 20 A 1.0 0.8 0 0 17 34 51 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 68 85 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 R DS(on) - Drain-to-Source On-Resistance (Ω) 0.020 I S - Source Current (A) 10 TA = 150 °C 1 0.1 TA = 25 °C 0.01 0.001 0.0 0.016 0.012 0.008 TA = 125 °C 0.004 TA = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 200 0.2 160 Power (W) VGS(th) (V) 4 - 0.1 ID = 5 mA - 0.4 120 80 ID = 250 µA - 0.7 - 1.0 - 50 40 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse DC 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 40 I D - Drain Current (A) 32 24 16 8 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 0.8 0.4 2 0.0 0 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 5 Si4456DY Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Notes: 0.1 PDM t1 t2 t1 t2 2. Per Unit Base = RthJA = 60 °C/W 1. Duty Cycle, D = 3. TJM – T = PDMZthJA(t) 4. Surface Mounted 0.01 10-1 10-2 10-3 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73852. www.vishay.com 6 Document Number: 73852 S09-0138-Rev. B, 02-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000