SI4567DY-T1-GE3

Si4567DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 N-Channel - 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 0.085 at VGS = - 10 V - 4.4 0.122 at VGS = - 4.5 V - 3.7 Qg (Typ.) 5.6 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • CCFL Inverter D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 Top View Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free) Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) 5 - 4.4 TC = 70 °C 4.7 - 3.7 ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current TC = 25 °C TA = 25 °C 4.1 b, c - 3.6b, c 3.3 b, c - 2.9b, c 20 IS 2.3 - 2.5 1.5b, c - 1.6b, c - 20 ISM 20 Single Pulse Avalanche Current IAS 7 12 EAS 2.5 7.2 TC = 25 °C 2.75 2.95 TC = 70 °C 1.75 1.90 Maximum Power Dissipation L = 0.1 mH TA = 25 °C PD 1.95b, c 1.18b, c 1.25b, c TJ, Tstg Operating Junction and Storage Temperature Range mJ b, c 1.85 TA = 70 °C A - 20 Pulsed Source-Drain Current Single Pulse Avalanche Energy V ± 16 TC = 25 °C TA = 25 °C Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) P-Channel Symbol Typ. Max. t ≤ 10 s RthJA 57 67.5 54 64 Steady State RthJF 35 45 33 42 Typ. Max. Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 1 Si4567DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 40 VGS = 0 V, ID = - 250 µA P-Ch - 40 ID = 250 µA N-Ch P-Ch - 40 ID = 250 µA N-Ch - 4.6 3.5 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs V IID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.8 2.2 VDS = VGS, ID = - 250 µA P-Ch - 0.8 - 2.2 VDS = 0 V, VGS = ± 16 V VDS = 40 V, VGS = 0 V Zero Gate Voltage Drain Current 40 ID = - 250 µA N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 40 V, VGS = 0 V P-Ch -1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS = 5 V, VGS = 10 V N-Ch 20 VDS = - 5 V, VGS = - 10 V P-Ch - 20 VGS = 10 V, ID = 4.1 A N-Ch 0.048 VGS = - 10 V, ID = - 3.6 A P-Ch 0.068 0.085 VGS = 4.5 V, ID = 3.8 A N-Ch 0.056 0.070 VGS = - 4.5 V, ID = - 2.9 A P-Ch 0.097 0.122 VDS = 15 V, ID = 4.1 A N-Ch 15 VDS = - 15 V, ID = - 3.6 A P-Ch 7 nA µA A 0.060 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 5 A Total Gate Charge Gate-Source Charge Qg VDS = - 20 V, VGS = - 10 V, ID = - 5 A 355 P-Ch 480 N-Ch 50 P-Ch 80 N-Ch 29 P-Ch 56 N-Ch 8 12 P-Ch 12 18 3.7 6 9 P-Ch 6 N-Ch 1.1 P-Ch 1.5 N-Ch 1.4 P-Ch 2.7 Qgs Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz pF N-Ch N-Channel VDS = 20 V, VGS = 4.5 V ID = 5 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A www.vishay.com 2 N-Ch N-Ch 1.6 3.4 5.2 P-Ch 2.8 5.7 8.6 nC Ω Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Si4567DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica td(on) Turn-On Delay Time N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω td(on) Turn-On Delay Time N-Channel VDD = 20 V, RL = 4 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time tf P-Channel VDD = - 20 V, RL = 4 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 16 Ω IS TC = 25 °C td(off) Turn-Off Delay Time Fall Time N-Ch 8 13 P-Ch 10 15 N-Ch 20 30 P-Ch 16 25 N-Ch 23 35 P-Ch 19 30 N-Ch 27 42 P-Ch 10 15 N-Ch 74 110 P-Ch 23 35 N-Ch 95 145 140 P-Ch 93 N-Ch 31 48 P-Ch 30 45 N-Ch 33 50 P-Ch 25 38 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage ISM N-Ch 2.3 P-Ch - 2.5 N-Ch 20 P-Ch VSD A - 20 IS = 1.5 A N-Ch 0.8 1.2 IS = - 1.6 A P-Ch - 0.8 - 1.2 N-Ch 26 40 P-Ch 26 40 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C N-Ch 26 40 P-Ch 22 35 Reverse Recovery Fall Time ta P-Channel IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C N-Ch 13 P-Ch 12 Reverse Recovery Rise Time tb N-Ch 13 P-Ch 14 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 3 Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 1.2 1.0 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 thru 4 V 16 12 3V 8 4 0.8 0.6 TC = 125 ˚C 0.4 25 ˚C 0.2 - 55 ˚C 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 550 450 0.07 C - Capacitance (pF) R DS(on) - On-Resistance (m Ω) 500 VGS = 4.5 V 0.06 VGS = 10 V 0.05 400 Ciss 350 300 250 200 150 0.04 Crss 100 Coss 50 0.03 0 0 4 8 12 16 20 0 16 24 32 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance ID = 5 A ID = 5 A 1.8 VDS = 20 V VDS = 30 V 4 www.vishay.com 4 1.5 VGS = 10 V 1.2 0.9 2 0 0.0 VGS = 4.5 V (Normalized) 6 VDS = 10 V R DS(on) - On-Resistance 8 40 2.1 10 V GS - Gate-to-Source Voltage (V) 8 2.5 5.0 7.5 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 ˚C 1 TJ = 25 ˚C 0.1 0.01 0.00 0.2 0.4 0.6 0.8 1.0 ID = 5 A 0.20 0.15 0.10 TA = 125 °C 0.05 TA = 25 °C 0.00 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 50 0.2 40 0.0 Power (W) VGS(th) Variance (V) 5 ID = 5 mA - 0.2 - 0.4 30 20 ID = 250 µA 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 5 Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 5 ID - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (˚C) Current Derating* 3.5 1.25 3.0 Power Dissipation (W) Power Dissipation (W) 1.00 2.5 2.0 1.5 1.0 0.75 0.50 0.25 0.5 0.0 0.00 0 25 50 75 100 125 TC - Case Temperature (˚C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Si4567DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 7 Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 20 VGS = 10 thru 5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 16 4V 12 1.2 0.8 TC = 125 °C 4 0.4 25 °C 0 0.0 0.0 0.0 8 - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 800 600 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 700 0.17 0.14 VGS = 4.5 V 0.11 400 300 200 VGS = 10 V 0.08 Ciss 500 Coss 100 0.05 Crss 0 0 4 8 12 16 20 0 8 ID - Drain Current (A) 16 1.8 ID = 5 A ID = 3.6 A VGS = 10 V 1.6 8 VDS = 10 V 6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 40 Capacitance 10 VDS = 20 V 4 VDS = 30 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 2.5 5.0 7.5 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0 0.0 24 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 R DS(on) - Drain-to-Source On-Resistance ( Ω) 20 I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 ID = 3.6 A 0.4 0.3 0.2 0.1 TA = 25 °C 0.0 0.01 0.00 0.2 0.4 0.6 0.8 1.0 TA = 125 °C 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 80 0.4 64 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.3 ID = 5 mA 0.1 48 32 0.0 - 0.1 16 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 1 10 ms 0.1 0.01 0.1 100 ms 1s 10 s DC TA = 25 °C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 9 Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 5 ID - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4.0 1.5 3.5 1.2 Power Dissipation (W) Power Dissipation (W) 3.0 2.5 2.0 1.5 1.0 0.9 0.6 0.3 0.5 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 Si4567DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73426. Document Number: 73426 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000