SI4621DY-T1-E3

Si4621DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ.) 4.5 nC • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 20 0.45 at 1 A 2 • Portable Devices - Ideal for Boost Circuits - Ideal for Buck Circuits SO-8 A A S G 8 K 2 7 K 3 6 D 4 5 D 1 S K D A G Top View Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free) Si4621DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ID TA = 25 °C - 5a - 5b, c - 4b, c IDM TC = 25 °C IS - 25 1.7b, c IF 2b Pulsed Forward Current (Schottky) IFM 5 TC = 25 °C 2 TA = 25 °C 2b, c TC = 25 °C Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 3.1 TC = 70 °C TA = 70 °C A - 2.6 Average Forward Current (Schottky) Maximum Power Dissipation (MOSFET) V - 6.2 TA = 70 °C Pulsed Drain Current (MOSFET) Unit - 20 PD 1.3b, c 2.7 TC = 70 °C 1.7 TA = 25 °C 1.6b, c TA = 70 °C 1b, c TJ, Tstg - 55 to 150 W °C www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJF RthJA RthJF Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g Maximum Junction-to-Foot (Drain) (Schottky) Typical Maximum Unit 55 33 63 39 62.5 40 78 47 °C/W Notes: b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. f. Maximum under Steady State conditions is 110 °C/W. g. Maximum under Steady State conditions is 115 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 tr mV/°C 3.6 -1 -3 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS  5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A - 25 0.054 VGS = - 4.5 V, ID = - 1.1 A 0.073 0.094 VDS = - 10 V, ID = - 5 A 10 VDS = - 10 V, VGS = 0 V, f = 1 MHz 160 450 pF 105 VDS = - 10 V, VGS = - 10 V, ID = - 6.2 A VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A 8.7 13 4.5 6.8 1.7 VDD = - 10 V, RL = 2.5  ID  - 4 A, VGEN = - 4.5 V, Rg = 1   9 15 25 60 90 22 35 15 25 5 10 tf nC 1.8 f = 1 MHz tf tr  S td(on) td(off) µA A 0.042 td(on) td(off) V - 16 VDD = - 10 V, RL = 2.5  ID  - 4 A, VGEN = - 10 V, Rg = 1  60 90 20 30 7 15 ns Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 6.2 - 25 IS = - 1.7 A, VGS = 0 V IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 21 40 ns 10 20 nC 7 ns 16 Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 1 A Min. Typ. Max. 0.41 0.45 IF = 1 A, TJ = 125 °C 0.36 0.41 0.20 Vr = 20 V 0.02 Vr = 20 V, TJ = 85 °C 0.7 7 Vr = 20 V, TJ = 125 °C 5 50 Vr = 10 V 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 25 10 VGS = 10 V thru 6 V 8 ID - Drain Current (A) ID - Drain Current (A) 20 VGS = 5 V 15 VGS = 4 V 10 5 6 4 TJ = 125 °C 2 VGS = 3 V TJ = 25 °C 0 TJ = - 55 °C 0 0 0.5 1 1.5 2 2.5 3 0 1 Output Characteristics 3 4 Transfer Characteristics 0.30 800 700 0.25 VGS = 4.5 V 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.20 0.15 0.10 Ciss 500 400 300 Coss 200 VGS = 10 V 0.05 100 0.00 Crss 0 0 5 10 15 ID - Drain Current (A) 20 25 0 2 4 6 8 10 12 14 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 20 Capacitance 10 1.6 8 RDS(on) - On-Resistance (Normalized) ID = 6.2 A VGS - Gate-to-Source Voltage (V) 18 VDS = 10 V 6 VDS = 16 V 4 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 8 10 VGS = 10 V, 5 A ID = 5 A 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.30 R DS(on) - Drain-to-Source On-Resistance (W) IS - Source Current (A) 100 30 10 ID = 5 A 0.25 0.20 0.15 0.10 TA = 125 °C 0.05 TA = 25 °C 0.00 1 0 0.2 0.4 0.8 1 0.6 VSD - Source-to-Drain Voltage (V) 1.2 0 1.4 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 2.3 50 2.2 ID = 250 µA 40 2.0 Power (W) VGS(th) (V) 2.1 1.9 1.8 30 20 1.7 10 1.6 1.5 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 TJ - Junction Temperature (°C) 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 100 µs 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix 8 4 6 3 Power Dissipation (W) ID - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 4 2 2 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 10 IF - Forward Current (A) IF - Reverse Current (mA) 10 1 20 V 0.1 10 V 0.01 0.001 1 TJ = 150 °C TJ = 25 °C 0.1 0.0001 0.00001 - 50 - 25 0 25 50 100 75 125 0.01 0.0 150 0.1 TJ - Junction Temperature (°C) Reverse Current vs. Junction Temperature 0.2 0.3 0.4 VF - Forward Voltage Drop (V) 0.5 Forward Voltage Drop CT - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 VRS - Reverse Voltage (V) 16 20 Capacitance www.vishay.com 8 Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4621DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 1 10-1 Square Wave Pulse Duration (s) 10-2 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.02 0.05 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73855. Document Number: 73855 S11-1648-Rev. D, 15-Aug-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000