SI4830ADY-T1-E3

Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 at 1 A 2.0 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • Si4830DY Pin Compatible • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter D1 D2 SO-8 S1/D2 1 8 D1 G1 2 7 D1 S2 3 6 S1/D2 G2 4 5 S1/D2 Schottky Diode G1 G2 Top View Ordering Information: Si4830ADY-T1-E3 (Lead (Pb)-free) Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C 7.5 6.0 ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Maximum Power Dissipationa 10 s 1.7 2.0 1.3 PD TJ, Tstg Operating Junction and Storage Temperature Range Steady State 30 ± 20 5.7 4.6 30 0.9 1.1 0.7 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS MOSFET Parameter Symbol a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State RthJA RthJF Typ. 52 93 35 Max. 62.5 110 40 SCHOTTKY Typ. Max. 53 62.5 93 110 35 40 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72021 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Si4830ADY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 µA IGSS VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) RDS(on) gfs VSD Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime 1.4 1 Ch-2 100 Ch-1 15 Ch-2 VGS = 4.5 V, ID = - 6.5 A A 0.017 0.022 0.024 0.030 VDS = 15 V, ID = 7.5 A 19 0.75 1.2 Ch-2 0.47 0.5 7 11 VDS = 15 V, VGS = 4.5 V, ID = 7.5 A Fall Time tf Source-Drain Reverse Recovery Time trr Ω S Ch-1 2.9 V nC 2.5 Rg tr µA 2000 20 0.5 1.5 2.4 9 15 td(on) td(off) V nA Ch-1 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A IS= 1 A, VGS = 0 V 3.0 ± 100 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 µs 10 17 19 30 9 15 Ch-1 35 55 Ch-2 32 55 Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions Min. Typ. Max. IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125 °C 0.36 0.42 VR = 30 V 0.004 0.100 VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 VR = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72021 S09-0868-Rev. G, 18-May-09 Si4830ADY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 5 V 4V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) Output Characteristics 4 5 1200 Ciss 960 C - Capacitance (pF) 0.030 VGS = 4.5 V 0.020 VGS = 10 V 720 480 Coss 0.010 240 0.000 Crss 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 VDS = 15 V ID = 7.5 A 1.6 8 6 4 2 VGS = 10 V I D = 7.5 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 Transfer Characteristics 0.040 R DS(on) - On-Resistance (Ω) 2 VGS - Gate-to-Source Voltage (V) 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72021 S09-0868-Rev. G, 18-May-09 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4830ADY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 0.06 0.05 R DS(on) - On-Resist ance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.04 ID = 7.5 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 100 0.2 80 0.0 60 Power (W) V GS(th) Variance (V) ID = 250 µA - 0.2 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 1 10 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 1 100 ms 0.1 1s 10 s TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot www.vishay.com 4 Document Number: 72021 S09-0868-Rev. G, 18-May-09 Si4830ADY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 93 °C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72021 S09-0868-Rev. G, 18-May-09 www.vishay.com 5 Si4830ADY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 20 10 I F - Forward Current (A) IR - Reverse Current (mA) TJ = 150 °C 1 30 V 0.1 24 V 0.01 TJ = 25 °C 0.001 1 0.0 0.0001 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) TJ - Temperature (°C) Forward Voltage Drop Reverse Current vs. Junction Temperature 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72021. www.vishay.com 6 Document Number: 72021 S09-0868-Rev. 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