SI5509DC-T1-E3

Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V - 3.6a 3.9 nC 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1206-8 ChipFET® 1 D1 S2 S1 D1 G1 D1 Marking Code S2 D2 G2 ED D2 G2 XXX G1 Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5509DC-T1-E3 (Lead (Pb)-free) Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Source Drain Current Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C P-Channel 20 - 20 ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range 4.8a - 3.8a - 3.9b, c - 3.1b, c - 15 - 3.7 - 1.7b, c 4.5 2.88 2.1b, c 1.33b, c 4.9a 5.0b, c 3.9b, c 10 3.7 1.7b, c 4.5 2.88 2.1b, c 1.33b, c - 55 to 150 260 Soldering Recommendations (Peak Temperature)d, e Unit V ± 12 6.1a IDM Pulsed Drain Current N-Channel A W °C THERMAL RESISTANCE RATINGS N-Channel Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF P-Channel Typ. Max. Typ. Max. Unit 50 30 60 40 50 30 60 40 °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W for both channels. Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 1 Si5509DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA N-Ch 20 VGS = 0 V, ID = - 250 µA P-Ch - 20 ID = 250 µA N-Ch 18.4 ID = - 250 µA P-Ch - 15.1 ID = 250 µA N-Ch - 3.4 2.2 On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb IDSS ID(on) RDS(on) gfs mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.7 2 VDS = VGS, ID = - 250 µA P-Ch - 0.7 -2 VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current V N-Ch 100 P-Ch - 100 N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≤ 5 V, VGS = 4.5 V N-Ch 10 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 15 VGS = 4.5 V, ID = 5.0 A N-Ch 0.043 VGS = - 4.5 V, ID = - 3.9 A P-Ch 0.074 0.090 VGS = 2.5 V, ID = 3.9 A N-Ch 0.068 0.084 VGS = - 2.5 V, ID = - 2.9 A P-Ch 0.128 0.160 VDS = 10 V, ID = 5.0 A N-Ch 10.4 VDS = - 10 V, ID = - 3.9 A P-Ch 8.2 N-Ch 455 P-Ch 300 V nA µA A 0.052 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 4.0 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Qg VDS = - 10 V, VGS = - 5 V, ID = - 3.9 A Rg 85 P-Ch 95 N-Ch 50 P-Ch 65 N-Ch 4.4 6.6 P-Ch 4.1 6.2 3.8 5.7 5.9 P-Ch 3.9 N-Ch 0.9 P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.9 A P-Ch 0.7 N-Ch 0.95 f = 1 MHz pF N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 4.0 A Qgs Qgd N-Ch P-Ch 1.25 N-Ch 1.9 P-Ch 8 nC Ω Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 Si5509DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr N-Channel VDD = 10 V, RL = 2.5 Ω ID ≅ 4.0 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 10 V, RL = 3.2 Ω ID ≅ - 3.14 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 6 9 P-Ch 8 12 N-Ch 95 143 P-Ch 75 113 N-Ch 12 18 38 P-Ch 25 N-Ch 6 9 P-Ch 60 90 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD - 3.75 N-Ch 10 P-Ch 0.8 1.2 IS = - 1.5 A, VGS = 0 V P-Ch - 0.8 - 1.2 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta P-Channel IF = - 1.5 A, dI/dt = - 100 A/µs, TJ = 25 °C A - 15 N-Ch trr tb 3.75 P-Ch IS = 2.4 A, VGS = 0 V N-Channel IF = 2.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time N-Ch N-Ch 12 18 P-Ch 18 27 N-Ch 5 8 P-Ch 8 12 N-Ch 7.5 P-Ch 14 N-Ch 4.5 P-Ch 4 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 3 Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 VGS = 5 V thru 3.5 V VGS = 3 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 2.5 V 6 3 3 TC = 25 °C 2 TC = 125 °C 1 VGS = 2 V TC = - 55 °C VGS = 1.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 3.0 600 Ciss 500 0.15 C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) 2.0 VGS = 2.5 V 0.10 400 300 200 VGS = 4.5 V 0.05 Coss 100 Crss 0.00 0 3 6 9 15 0 15 0 4 8 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 20 1.6 ID = 4 A VGS = 4.5 V ID = 5 A 4 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS = 10 V 3 VDS = 16 V 2 1 VGS = 2.5 V ID = 3.9 A 1.2 1.0 0.8 0 0 www.vishay.com 4 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 5 A 10 TA = 150 °C TA = 25 °C 1 0.15 0.10 TA = 125 °C 0.05 TA = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.5 50 1.3 40 Power (W) VGS(th) (V) ID = 250 μA 1.1 0.9 0.7 0.5 - 50 30 20 10 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 10-1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on) * 10 ID - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 0.01 0.001 0.1 DC TA = 25 °C Single Pulse 1 BVDSS Limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 5 Si5509DC Vishay Siliconix 7 4.0 6 3.5 3.0 5 Power Dissipation (W) ID - Drain Current (A) N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 4 3 2 2.5 2.0 1.5 1.0 1 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 1. Duty Cycle, D = t2 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 7 Si5509DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 V thru 3 V 4 ID - Drain Current (A) ID - Drain Current (A) 8 VGS = 2.5 V 6 4 VGS = 2 V 2 3 TC = 25 °C 2 1 TC = 125 °C VGS = 1.5 V TC = - 55 °C 0 0 0 0.6 1.2 1.8 2.4 3.0 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 2.5 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 500 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 400 Ciss 300 200 Coss 0.05 100 Crss 0.00 0 2 4 6 8 0 10 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 20 1.6 4 1.4 VDS = 10 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 3.9 A VDS = 16 V 3 2 1 VGS = 4.5 V, ID = 5 A VGS = 2.5 V, ID = 3.9 A 1.2 1.0 0.8 0 0 www.vishay.com 8 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 Si5509DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.3 ID = 3.9 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TA = 125 °C 1 0.1 TA = 25 °C 0.2 TA = 125 °C 0.1 TA = 25 °C 0.01 0.001 0.0 0 0.4 0.8 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.2 50 1.1 40 ID = 250 μA Power (W) VGS(th) (V) 1.0 0.9 30 20 0.8 10 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 TJ - Junction Temperature (°C) 10-2 10-1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* 10 ID - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 DC 0.01 BVDSS Limited TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 9 Si5509DC Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4.0 3.5 5 Power Dissipation (W) ID - Drain Current (A) 3.0 4 Package Limited 3 2 2.5 2.0 1.5 1.0 1 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 Si5509DC Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 1. Duty Cycle, D = t2 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 4. Surface Mounted 0.01 10-4 -3 -2 10 -1 10 10 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73629. Document Number: 73629 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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