SI5905BDC-T1-E3

Si5905BDC Vishay Siliconix Dual P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.080 at VGS = - 4.5 V - 4a 0.117 at VGS = - 2.5 V - 4a 0.170 at VGS = - 1.8 V - 3.5 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices ® 1206-8 ChipFET (Dual) 1 S1 D1 S1 S2 G1 D1 S2 D2 G2 D2 Bottom View Marking Code DH XXX G1 G2 Lot Traceability and Date Code Part # Code Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free) Si5905BDC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit -8 ±8 - 4a - 4a - 3.5b, c - 2.8b, c - 10 - 2.6 - 1.2b, c 3.1 2 1.5b, c 0.94b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 70 85 Maximum Junction-to-Ambientb, f °C/W 33 40 Maximum Junction-to-Foot (Drain) Steady State RthJF Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 120 °C/W. Document Number: 74650 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 1 Si5905BDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V -7 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 V IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 85 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2 - 0.45 - 10 µA A VGS = - 4.5 V, ID = 3.3 A 0.066 0.080 VGS = - 2.5 V, ID = - 2.5 A 0.097 0.117 VGS = - 1.8 V, ID = - 0.6 A 0.140 0.170 VDS = - 4 V, ID = - 3.3 A 8 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 350 VDS = - 4 V, VGS = 0 V, f = 1 MHz 85 VDS = - 4 V, VGS = - 8 V, ID = - 3.7 A VDS = - 4 V, VGS = - 4.5 V, ID = - 3.7 A td(off) 7 11 4 6 0.65 f = 1 MHz VDD = - 4 V, RL = 1.3 Ω ID ≅ - 3 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 5.5 10 15 25 40 20 30 tf 7 15 td(on) 5 10 10 15 17 30 10 15 tr td(off) nC 0.75 td(on) tr pF 140 VDD = - 4 V, RL = - 1.3 Ω ID ≅ - 3 A, VGEN = - 8 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -4 - 10 IS = - 3 A, VGS = 0 V IF = - 3 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 55 85 ns 25 50 nC 14 41 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74650 S10-0547-Rev. B, 08-Mar-10 Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 5 VGS = 5 V thru 2.5 V 8 4 I D - Drain Current (A) I D - Drain Current (A) 2V 6 4 1.5 V 3 2 TC = 125 °C 2 1 TC = 25 °C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.30 450 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 VGS = 1.8 V VGS = 2.5 V 0.15 0.10 VGS = 4.5 V Ciss 300 Coss 150 0.05 Crss 0 0.00 0 2 4 6 8 0 10 2 6 8 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On Resistance vs. Drain Current Capacitance 8 1.5 ID = 3.3 A ID = 3.7 A 1.4 VDS = 4 V 4 VDS = 6.4 V 2 1.3 (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74650 S10-0547-Rev. B, 08-Mar-10 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 10 ID = 3.3 A RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 TJ = 150 °C TJ = 25 °C 0.20 0.15 TA = 125 °C 0.10 TA = 25 °C 0.05 1 0.0 0.2 0.4 0.6 0.8 1.0 0.00 0.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temperature On-Resistance vs. Gate-to-Source Voltage 50 0.7 40 0.6 30 Power (W) VGS(th) (V) ID = 250 µA 0.5 20 0.4 10 0.3 - 50 - 25 0 25 50 75 100 125 0 0.0001 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power 10 Limited by RDS(on)* I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.01 * VGS BVDSS Limited 0.1 1 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74650 S10-0547-Rev. B, 08-Mar-10 Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 4 3 Package Limited Power Dissipation (W) I D - Drain Current (A) 5 4 3 2 2 1 1 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74650 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 5 Si5905BDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 100 10 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74650. www.vishay.com 6 Document Number: 74650 S10-0547-Rev. 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