Si7138DP
Vishay Siliconix
N-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
ID
(A)a
0.0078 at VGS = 10 V
30
0.009 at VGS = 6 V
30
Qg (Typ.)
55
PowerPAK SO-8
• Halogen-free According to IEC 61249-2-21
Definition
• Low Thermal Resistance PowerPAK® Package
• 100 % Rg and Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
6.15 mm
• Primary Side Switch
- Very Low Rg and Qgd, Critical for Minimizing Losses
5.15 mm
1
S
2
S
3
D
G
4
D
8
D
7
D
6
D
G
5
Bottom View
S
N-Channel MOSFET
Ordering
rdering Information: Si7138DP-T1-E3 (Lead (Pb)-free)
Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
d, e
Unit
V
19.7b, c
15.7b, c
80
IDM
Pulsed Drain Current
Soldering Recommendations (Peak Temperature)
Limit
60
± 20
30
30
30a
4.5b, c
43
93
96
61.5
A
mJ
5.4b, c
3.5b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
18
1.0
Maximum
23
1.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
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1
Si7138DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 1 mA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
60.5
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS ≥ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
gfs
- 8.4
2
4
30
nA
µA
A
VGS = 10 V, ID = 19.7 A
0.0065
0.0078
VGS = 6 V, ID = 18 A
0.0073
0.009
VDS = 15 V, ID = 19.7 A
84
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
6900
VDS = 30 V, VGS = 0 V, f = 1 MHz
200
VDS = 30 V, VGS = 10 V, ID = 19.7 A
Turn-On Delay Time
td(off)
Fall Time
Turn-On Delay Time
f = 1 MHz
0.6
47
70
VDD = 30 V, RL = 3 Ω
ID ≅ 10 A, VGEN = 6 V, Rg = 1 Ω
120
180
40
60
8
15
25
40
12
20
VDD = 30 V, RL = 3 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
0.9
tf
td(off)
Turn-Off Delay Time
83
27.5
td(on)
tr
Rise Time
135
55
nC
11
tr
Turn-Off Delay Time
90
VDS = 30 V, VGS = 6 V, ID = 19.7 A
td(on)
Rise Time
pF
470
50
75
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
30
ISM
80
IS = 2.7 A
VSD
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
45
70
ns
Body Diode Reverse Recovery Charge
Qrr
80
120
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
30
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
80
6V
10 V thru 7 V
5V
70
I D - Drain Current (A)
ID - Drain Current (A)
16
60
50
40
30
25 °C
12
TC = 125 °C
8
20
4
4V
3V
10
- 55 °C
0
0.0
0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
8000
0.0080
Ciss
0.0076
C - Capacitance (pF)
VGS = 6 V
RDS(on)
0.0072
0.0068
VGS = 10 V
6000
4000
2000
0.0064
Coss
Crss
0
0.0060
0
20
40
60
80
0
10
ID - Drain Current (A)
20
40
50
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 19.7 A
ID = 19.7 A
1.6
8
VDS = 30 V
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
30
6
VDS = 48 V
4
2
1.4
VGS = 10,6 V
1.2
1.0
0.8
0
0
20
40
60
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
80
100
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
TJ = 150 °C
RDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 25 °C
10
ID = 19.7 A
0.015
TJ = 125 °C
0.010
TJ = 25 °C
0.005
4
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
5
6
7
8
9
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.7
100
ID = 250 µA
80
Power (W)
VGS(th) (V)
3.2
2.7
2.2
60
40
1.7
1.2
- 50
20
- 25
0
25
50
75
100
125
0
0.001
150
0.01
Threshold Voltage
1
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
IDM limited
100 µs
ID(on) limited
10
I D - Drain Current (A)
0.1
Time (s)
TJ - Temperature (°C)
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS limited
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
ID - Drain Current (A)
80
60
40
Limited by Package
20
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
100
100
80
Peak Avalanche Current (A)
Power (W)
80
60
40
20
TA =
L x ID
BV - V DD
10
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating (Junction-to-Case)
150
0.000001
0.00001
0.0001
0.001
Time (s)
Maximum Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
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5
Si7138DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.5
0.2
0.1
0.1
0.05
Single Pulse
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73530.
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Document Number: 73530
S11-0212-Rev. C, 14-Feb-11
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Revision: 01-Jan-2022
1
Document Number: 91000