SI7972DP-T1-GE3

Si7972DP www.vishay.com Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Dual D2 D2 6 5 6. 15 m m 1 5 5.1 mm Top View D1 7 • • • • D1 8 1 2 S1 3 G1 4 S2 G2 Bottom View TrenchFET® power MOSFET PWM optimized 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • System power DC/DC D1 D2 PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 60 0.018 0.021 7.1 8a Dual G1 G2 N-Channel MOSFET N-Channel MOSFET S1 S2 ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free Si7972DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current Source-drain current diode current Maximum power dissipation ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e IS PD TJ, Tstg LIMIT 60 ± 20 8a 8a 8a 8a 40 19 3 b, c 22 14 3.6 b, c 2.3 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f t ≤ 10 s SYMBOL RthJA TYP. 26 MAX. 35 UNIT °C/W 4 5.5 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W S21-0760-Rev. C, 12-Jul-2021 Document Number: 75360 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7972DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate threshold voltage VDS VGS = 0 V, ID = 250 μA 60 - - ΔVDS/TJ ID = 250 μA - 38 - ΔVGS(th)/TJ ID = 250 μA - -4.9 - mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.7 V Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current b ID(on) Drain-source on-state resistance b Forward transconductance b RDS(on) gfs VDS = 60 V, VGS = 0 V - - 1 VDS = 60 V, VGS = 0 V, TJ = 85 °C - - 10 VDS ≥ 5 V, VGS = 10 V 30 - - VGS = 10 V, ID = 11 A - 0.015 0.018 VGS = 4.5 V, ID = 10 A - 0.017 0.021 VDS = 30 V, ID = 11 A - 38 - - 1050 - VDS = 30 V, VGS = 0 V, f = 1 MHz - 435 - - 20 - - 15.2 23 μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 30 V, VGS = 10 V, ID = 11 A - 7.1 11 VDS = 30 V, VGS = 4.5 V, ID = 11 A - 4.4 - - 1.3 - f = 1 MHz 0.12 0.6 1.2 - 15 120 - 80 30 - 15 30 tf - 15 30 td(on) - 10 15 - 25 40 - 20 30 - 10 15 td(on) tr td(off) tr td(off) VDD = 30 V, RL = 3.45 Ω ID ≅ 8.7 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 30 V, RL = 3.45 Ω ID ≅ 8.7 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode Current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C - - 8 - - 40 IS = 8.7 A - 0.8 1.2 - 34 51 ns IF = 8.7 A, di/dt = 100 A/μs, TJ = 25 °C - 30 45 nC - 16 - - 18 - A V ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0760-Rev. C, 12-Jul-2021 Document Number: 75360 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7972DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 10000 40 20 100 10 0 1 1.5 100 TC = 25 °C TC = -55 °C 0 10 0.5 10 0 2 1 2 3 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 10000 1500 0.025 10000 1st line 2nd line VGS = 4.5 V 0.015 VGS = 10 V 0.01 100 Ciss 1000 900 1st line 2nd line 1000 2nd line C - Capacitance (pF) 1200 0.02 5 VDS - Drain-to-Source Voltage (V) 2nd line 0.03 2nd line RDS(on) - On-Resistance (Ω) 1000 30 15 VGS = 3 V 0 TC = 125 °C 45 1st line 2nd line 1000 2nd line ID - Drain Current (A) 60 30 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 4 V 600 100 Coss 300 0.005 Crss 0 10 0 10 20 30 0 10 0 40 10 20 On-Resistance vs. Drain Current Capacitance 8 1000 1st line 2nd line VDS = 30 V VDS = 48 V 4 100 2 0 10 10 15 20 VGS = 10 V, ID = 11 A 1.5 1000 1.3 1.1 100 0.9 VGS = 4.5 V, ID = 10 A 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S21-0760-Rev. C, 12-Jul-2021 10000 1st line 2nd line VDS = 15 V 5 60 Axis Title 1.7 10000 2nd line RDS(on) - On-Resistance (Normalized) ID = 11.3 A 2nd line VGS - Gate-to-Source Voltage (V) 50 VDS - Drain-to-Source Voltage (V) 2nd line Axis Title 0 40 ID - Drain Current (A) 2nd line 10 6 30 Document Number: 75360 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7972DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 1 TJ = 25 °C 0.1 100 0.01 0.001 0.2 0.4 0.6 0.8 1.0 0.05 1000 0.04 0.03 TJ = 150 °C 0.02 100 TJ = 25 °C 0.01 0 10 0 10000 0.06 1st line 2nd line 100 1.2 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resi.0stance vs. Gate-to-Source Voltage Axis Title 2.3 40 10000 ID = 250 μA 2.1 32 Power (W) 1st line 2nd line 2nd line VGS(th) (V) 1000 1.9 1.7 24 16 100 8 1.5 1.3 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) 2nd line Time (s) Threshold Voltage Single Pulse Power 100 1000 Axis Title 100 10000 IDM limited 100 μs 1000 1 ms 1 Limited by RDS(on) 10 ms (1) 1st line 2nd line 2nd line ID - Drain Current (A) ID limited 10 100 ms 100 0.1 DC, 10 s, 1 s BVDSS limited TA = 25 °C Single pulse 0.01 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S21-0760-Rev. C, 12-Jul-2021 Document Number: 75360 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7972DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 24 1000 1st line 2nd line 2nd line ID - Drain Current (A) 32 16 100 Package limited 8 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 28 10000 10000 2.0 21 1.5 1st line 2nd line 14 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 1.0 100 7 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0760-Rev. C, 12-Jul-2021 Document Number: 75360 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7972DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75360. S21-0760-Rev. C, 12-Jul-2021 Document Number: 75360 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. DIM. A A1 b c D D1 D2 D3 D4 D5 E E1 E2 E3 E4 e K K1 H L L1  W M b D2 E3 Backside View of Dual Pad MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. 0.97 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.66 3.78 0.75 typ. 1.27 BSC 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.84 3.91 0.238 0.228 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.144 0.149 0.030 typ. 0.050 BSC 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 0.33 0.23 5.05 4.80 3.56 1.32 6.05 5.79 3.48 3.68 0.56 0.51 0.51 0.06 0° 0.15 0.246 0.236 0.151 0.154 0.028 0.028 0.008 12° 0.014 ECN: S17-0173-Rev. L, 13-Feb-17 DWG: 5881 Revison: 13-Feb-17 1 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000