SI8447DB-T2-E1

Si8447DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY (A)e VDS (V) RDS(on) (Ω) 0.075 at VGS = - 4.5 V - 11 - 20 0.105 at VGS = - 2.5 V - 9.5 0.260 at VGS = - 1.7 V - 6.0 ID Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Battery Switch • Charger Switch MICRO FOOT S Bump Side View S Backside View G 2 6 XXX S 3 8447 S G 1 D D D 4 P-Channel MOSFET 5 Device Marking: 8447 xxx = Date/Lot Traceability Code Ordering Information: Si8447DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C - 11 TC = 70 °C - 8.9 TA = 25 °C ID Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C Package Reflow Conditionsc A - 15 - 10.8 - 2.3a, b 13 PD 8.4 2.77a, b W 1.77a, b TA = 70 °C Operating Junction and Storage Temperature Range V - 5.1a, b - 4.1a, b TA = 70 °C Unit TJ, Tstg - 55 to 150 VPR 260 IR/Convection 260 °C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TC = 25 °C. Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 www.vishay.com 1 Si8447DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State Symbol Typical RthJA Maximum 37 45 RthJC 7 9.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 20 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2.5 - 0.4 -5 µA A VGS = - 4.5 V, ID = - 1 A 0.060 VGS = - 2.5 V, ID = - 1 A 0.085 0.105 VGS = - 1.7 V, ID = - 0.5 A 0.170 0.260 VDS = - 10 V, ID = - 1 A 7 VDS = - 10 V, VGS = 0 V, f = 1 MHz 160 0.075 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 600 VDS = - 10 V, VGS = - 10 V, ID = - 1 A VDS = - 10 V, VGS = - 4.5 V, ID = 1 A td(off) 15 25 7.5 12 1.2 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 12 25 40 25 40 35 55 tf 12 20 td(on) 7 15 10 15 30 45 15 25 tr td(off) tf nC 2.2 VGS = - 0.1 V, f = 1 MHz td(on) tr pF 105 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 8 V, Rg = 1 Ω ns Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 Si8447DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 11 - 15 IS = - 1 A, VGS = 0 V IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 25 40 ns 10 20 nC 9 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 www.vishay.com 3 Si8447DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 5 VGS = 5 V thru 3 V 4 ID - Drain Current (A) ID - Drain Current (A) TC = 125 °C VGS = 2.5 V 12 9 VGS = 2 V 6 3 3 2 TC = 25 °C 1 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.350 800 VGS = 1.7 V 0.250 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.300 0.200 VGS = 2.5 V 0.150 0.100 Ciss 600 400 Coss 200 0.050 VGS = 4.5 V Crss 0 0.000 0 3 6 9 12 0 15 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 20 1.4 ID = 1 A ID = 1 A VGS = 4.5 V 1.3 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 4 VDS = 10 V 6 VDS = 16 V 4 1.2 1.1 VGS = 2.5 V 1.0 0.9 2 0.8 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 16 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 Si8447DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.25 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1 A 10 TJ = 150 °C TJ = 25 °C 1 0.20 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0.00 0.1 0.0 0.3 0.6 0.9 1.2 1.5 0 1 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 30 0.9 25 0.8 4 5 20 ID = 250 µA Power (W) VGS(th) (V) 3 On-Resistance vs. Gate-to-Source Voltage 1.0 0.7 15 0.6 10 0.5 5 0.4 - 50 2 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 ID - Drain Current (A) Limited by R(DS)on* 10 100 ms 1 ms 1 10 ms TA = 25 °C Single Pulse 100 s 10 s, 1 s 0.1 DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 www.vishay.com 5 Si8447DB Vishay Siliconix 15 15 12 12 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 6 3 9 6 3 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 Si8447DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 0.02 Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 www.vishay.com 7 Si8447DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH) 6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A1 e A2 1 A C B A 2 Bump Note 2 e e Recommended Land S S D S G e 8447 s XXX D D s 6xØb s Mark on Backside of Die e e s E Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. · Dim. Millimetersa Inches Min. Nom. Max. Min. Nom. Max. A 0.510 0.575 0.590 0.0201 0.0224 0.0232 A1 0.220 0.250 0.280 0.0087 0.0098 0.0110 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 E 1.420 1.460 1.500 0.0559 0.0575 0.0591 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64802. www.vishay.com 8 Document Number: 64802 S-09-0664-Rev. A, 20-Apr-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1