SI8901EDB-T2-E1

Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET® Power MOSFET Ultra-Low RSS(on) ESD Protected: 6000 V MICRO FOOT® Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area RoHS COMPLIANT APPLICATIONS • Smart Batteries for Portable Devices S1 MICRO FOOT Bump Side View S2 5 4 Backside View G1 S2 5.4 kΩ Pin 1 Identifier S1 6 3 1 2 8901E xxx G2 G1 5.4 kΩ Device Marking: G2 8901E = P/N Code xxx = Date/Lot Traceability Code Ordering Information: Si8901EDB-T2-E1 (Lead (Pb)-free) S1 P-Channel S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Source1- Source2 Voltage Gate-Source Voltage Continuous Source1- Source2 Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C Package Reflow Conditions VGS ± 12 IS1S2 PD Unit V - 4.4 - 3.5 - 3.2 - 2.5 A - 10 1.7 1 0.8 0.5 TJ, Tstg Operating Junction and Storage Temperature Range c Steady State - 20 ISM Pulsed Source1- Source2 Current Maximum Power Dissipationa 5s VS1S2 - 55 to 150 IR/Convection W °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta Maximum Junction-to-Foot b t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 75 95 120 18 22 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. The foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. Document Number: 72941 S-82119-Rev. C, 08-Sep-08 www.vishay.com 1 Si8901EDB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VSS = VGS, ID = - 350 µA - 0.45 Typ. Max. Unit Static Gate Threshold Voltage - 1.0 V VSS = 0 V, VGS = ± 4.5 V ±4 µA VSS = 0 V, VGS = ± 12 V ± 10 mA VSS = - 20 V, VGS = 0 V -1 VSS = - 20 V, VGS = 0 V, TJ = 85 °C -5 IGSS Gate-Body Leakage Zero Gate Voltage Source Current IS1S2 On-State Source Currenta IS(on) VSS = - 5 V, VGS = - 4.5 V Source1- Source2 On-State Resistancea RS1S2(on) Forward Transconductancea gfs µA -5 A VGS = - 4.5 V, ISS = - 1 A 0.048 0.060 VGS = - 2.5 V, ISS = - 1 A 0.062 0.080 VGS = - 1.8 V, ISS = - 1 A 0.081 0.105 VSS = - 10 V, ISS = - 1 A 7 Ω S b Dynamic td(on) Turn-On Delay Time VSS = - 10 V, RL = 10 Ω ISS ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 2.3 3.5 2.2 3.5 1.3 2 9 14 µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 000 10 1000 I GSS - Gate Current (µA) I GSS - Gate Current (mA) IGSS at 25 °C (mA) 8 6 4 2 100 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.01 0 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage www.vishay.com 2 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Document Number: 72941 S-82119-Rev. C, 08-Sep-08 Si8901EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 5 thru 2 V 8 6 I D - Drain Current (A) ID - Drain Current (A) 8 1.5 V 4 6 4 TC = 125 °C 2 2 25 °C - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.14 1.6 VGS = 4.5 V IS1S2 = 1 A 0.12 1.4 RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Ω) 0.8 0.10 VGS = 1.8 V 0.08 VGS = 2.5 V 0.06 VGS = 4.5 V 0.04 1.2 1.0 0.8 0.02 0.00 0 2 4 6 8 0.6 - 50 10 - 25 ID - Drain Current (A) On-Resistance vs. Drain Current 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.4 0.20 IS1S2 = 5 A 0.3 0.16 IS1S2 = 350 µA IS1S2 = 1 A V GS(th) Variance (V) R DS(on) - On-Resistance (Ω) 0 TJ - Junction Temperature (°C) 0.12 0.08 0.04 0.2 0.1 0.0 - 0.1 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 72941 S-82119-Rev. C, 08-Sep-08 5 - 0.2 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) Threshold Voltage www.vishay.com 3 Si8901EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 30 Limited by RDS(on) * 25 10 µs, 100 µs 10 I D - Drain Current (A) 1 ms Power (W) 20 15 10 10 ms 1 100 ms 1s 0.1 10 s TC = 25 °C Single Pulse DC, 100 s 0.01 5 0.001 0 0.01 0.1 1 100 10 1000 0.1 Time (s) Single Pulse Power, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 4 Document Number: 72941 S-82119-Rev. C, 08-Sep-08 Si8901EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.8 mm PITCH) 6 x 0.30 ∼ 0.31 Note 3 Solder Mask - 0.4 Note 2 A2 A A1 e b Diameter Bump Note 1 e e Recommended Land 8901E XXX e D s Mark on Backside of Die s e e E Notes (Unless Otherwise Specified): 1. 6 solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ag/Ni/Ti layer. 3. Non-solder mask defined copper landing pad. 4. Laser marks on the silicon die back. Dim. A Millimetersa Inches Min. Max. Min. Max. 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.102 0.114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.52 1.6 0.0598 0.0630 E 2.32 2.4 0.0913 0.0945 e 0.750 0.850 0.0295 0.0335 s 0.380 0.400 0.0150 0.0157 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72941. Document Number: 72941 S-82119-Rev. C, 08-Sep-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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