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SI9913DY-T1-E3

SI9913DY-T1-E3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOIC-8

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SO

  • 数据手册
  • 价格&库存
SI9913DY-T1-E3 数据手册
Product is End of Life 3/2014 Si9913 Vishay Siliconix Half-Bridge MOSFET Driver for Switching Power Supplies DESCRIPTION FEATURES The Si9913 is a dual MOSFET high-speed driver with breakbefore-make. It is designed to operate in high frequency dcdc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with "floating" high-side gate drivers. Each driver is capable of switching a 3000 pF load with 60 ns propagation delay and 25 ns transition time. The Si9913 comes with internal breakbefore-make feature to prevent shoot-through current in the external MOSFETs. A synchronous enable pin is used to enable the low-side driver. When disabled, the OUTL is logic low. • • • • • • • • • • The Si9913 is available in both standard and lead (Pb)-free 8-pin SOIC packages for operation over the industrial operation range (- 40 °C to 85 °C). APPLICATIONS 4.5 to 5.5 V Operation Undervoltage Lockout 250 kHz to 1 MHz Switching Frequency Synchronous Switch Enable One Input PWM Signal Generates Both Drive Bootstrapped High-Side Drive Operates from 4.5 to 30 V Supply TTL/CMOS Compatible Input Levels 1 A Peak Drive Current Break-Before-Make Circuit • • • • • Multiphase Desktop CPU Supplies Single-Supply Synchronous Buck Converters Mobile Computing CPU Core Power Converters Standard-Synchronous Converters High Frequency Switching Converters FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE BOOT VDD D1 VDC Q1 CBOOT OUTH Level Shift TRUTH TABLE OUTPUT Undervoltage VS VDD OUTL IN SYN Q2 VS SYN VOUTH L L L L H H H H L L L H H H L H IN VOUTL L L L L L H L H H L H L H H L H L L L L L H L H + - Document Number: 71343 S-40133-Rev. B, 16-Feb-04 VBBM GND www.vishay.com 1 Product is End of Life 3/2014 Si9913 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Low Side Driver Supply Voltage VDD 7.0 Input Voltage on IN VIN - 0.3 to VDD + 0.3 VSYN - 0.3 to VDD + 0.3 Synchronous Pin Voltage V VBOOT 35.0 VBOOT - VS 7.0 TJ - 40 to 125 Tstg - 40 to 150 Power Dissipation (Note a and b) PD 830 mW Thermal Impedance θJA 125 °C/W 300 °C Bootstrap Voltage High Side Driver (Bootstrap) Supply Voltage Operating Junction Temperature Range Storage Temperature Range Lead Temperature (soldering 10 Sec) °C Notes: a. Device Mounted with all leads soldered to P.C. Board. b. Derate 8.3 W/°C above 25 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Bootstrap Voltage (High-Side Drain Voltage) Logic Supply Bootstrap Capacitor Ambient Temperature Symbol Limit VBOOT 4.5 to 30 Unit VDD 4.5 to 5.5 CBOOT 100 n to 1 µ F TA - 40 to 85 °C V SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = - 40 to 85 °C Limits Mina Typb Maxa Unit Power Supplies VDD Supply VDD IDD Supply IDD1(en) SYN = H, IN = H, VS = 0 V 1000 IDD Supply IDD2(en) SYN = H, IN = L, VS = 0 V 500 IDD Supply IDD3(dis) SYN = L, IN = X, VS = 0 V 500 IDD Supply IDD4(en) SYN = H, IN = X, VS = 25 V, VBOOT = 30 V 200 IDD Supply IDD5(dis) SYN = L, IN = X, VS = 25 V, VBOOT = 30 V 200 IDD(en) FIN = 300 kHz, SYN = High, Driving Si4412DY IDD(dis) FIN = 300 kHz, SYN = Low, Driving Si4412DY IBOOT VBOOT = 30 V, VS = 25 V, VOUTH = H IDD Supply Boot Strap Current 4.5 5.5 µA 9 mA 5 0.9 3 VBBM 1.1 3 Input High VIH 0.7 x VDD VDD + 0.3 Input Low VIL - 0.3 0.3 x VDD Reference Voltage Break-Before-Make Reference Voltage V Logic Inputs (SYN, IN) V Undervoltage Lockout VDD Undervoltage VUVL VDD Undervoltage Hysteresis VHYST www.vishay.com 2 VDD Rising 3.7 4.3 0.4 V Document Number: 71343 S-40133-Rev. B, 16-Feb-04 Product is End of Life 3/2014 Si9913 Vishay Siliconix SPECIFICATIONS Symbol Test Conditions Unless Specified VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = - 40 to 85 °C VFD1 Forward Current = 100 mA OUTH Source Current IOUT(H+) VBOOT - VS = 3.7 V, VOUTH - VS = 2 V OUTH Sink Current IOUT(H-) VBOOT - VS = 3.7 V, VOUTH - VS = 1 V OUTL Source Current IOUT(L+) VDD = 4.5 V, VOUTL = 2 V OUTL Sink Current IOUT(L-) VDD = 4.5 V, VOUTL = 1 V Parameter Limits Mina Typb Maxa 0.8 1 Unit Bootstrap Diode Diode Forward Voltage V Output Drive Current - 0.4 0.4 - 0.4 A 0.6 Timing (CLOAD = 3 nF) OUTL Off Propagation Delay tpdl(OUTL) OUTL On Propagation Delay tpdh(OUTL) OUTH Off Propagation Delay tpdl(OUTH) OUTH On Propagation Delay tpdh(OUTH) OUTL Turn On Time 30 VDD = 4.5 V 20 30 VBOOT - VS = 4.5 V tr(OUTL) 20 OUTL = 10 to 90 % 25 OUTL Turn Off Time tf(OUTL) OUTL = 90 to 10 % 25 OUTH Turn On Time tr(OUTH) OUTH - VS = 10 to 90 % 30 OUTH Turn Off Time tf(OUTH) OUTH - VS = 90 to 10 % 30 ns Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. TIMING WAVEFORMS IN 50 % 50 % tpdh(OUTL) tf(OUTL) 90 % 90 % OUTL 10 % 10 % tr(OUTL) tpdl(OUTH) tpdl(OUTL) tf(OUTH) tr(OUTH) tpdh(OUTH) OUTH 90 % 10 % 90 % 10 % VS Document Number: 71343 S-40133-Rev. B, 16-Feb-04 www.vishay.com 3 Product is End of Life 3/2014 Si9913 Vishay Siliconix PIN CONFIGURATION SO-8 OUTH 1 8 VS GND 2 7 BOOT IN 3 6 VDD SYN 4 5 OUTL Top View PIN DESCRIPTION Pin Number Name 1 OUTH Output drive for upper MOSFET. Function 2 GND Ground supply 3 IN 4 SYN Synchronous enable. When logic is high, the low-side driver is enabled. 5 OUTL Output drive for lower MOSFET. 6 VDD 7 BOOT 8 VS CMOS level input signal. Controls both output drives. Input power supply Floating bootstrap supply for the upper MOSFET Floating GND for the upper MOSFET. VS is connected to the buck switching node and the source side of the upper MOSFET. ORDERING INFORMATION Part Number Temperature Range Package - 40 to 85 °C Tape and Reel Si9913DY Bulk Si9913DY-T1 Si9913DY-T1-E3 Lead (Pb)-free Tape and Reel Eval Kit Temperature Range Board Type Si9913DB - 40 to 85 °C Surface Mount TYPICAL WAVEFORMS VS CL = Si4412DY OUTH OUTH See Figure 1 See Figure 1 OUTL OUTL IN IN Si9912 tr, tf, tpd Driver On Switch Delay www.vishay.com 4 CL = Si4412DY VS Si9912 tr, tf, tpd Driver Off Switch Delay Document Number: 71343 S-40133-Rev. B, 16-Feb-04 Product is End of Life 3/2014 Si9913 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 50 30 See Figure 2 40 Rise and Fall times (ns) See Figure 1 Current (mA) 10 tr(OUTH) 30 tf(OUTL) tf(OUTH) 20 tr(OUTL) 10 0 1 1 10 100 0.3 1000 Frequency (kHz) Rise and Fall Time vs. CLOAD 5 0.5 A See Figure 3 4 Output Voltage Drop (V) Output Voltage Drop (V) -1 -2 1A -3 1.5 A 2A 3 1.5 A 2 1A 1 -4 See Figure 3 3.5 4.0 4.5 5.0 5.5 0 3.0 6.0 0.5 A 3.5 4.0 4.5 5.0 Supply Voltage (V) Supply Voltage (V) VOUT(H+) vs. Supply VOUT(H-) vs. Supply 5.5 6.0 2.5 0 0.5 A See Figure 3 -1 2.0 Output Voltage Drop (V) 1A Output Voltage Drop (V) 10 IDD Supply Current vs. Frequency 0 -5 3.0 3 1 Load Capacitance (nF) -2 1.5 A -3 -4 2A 2A 1.5 1.5 A 1.0 1A 0.5 0.5 A -5 See Figure 3 -6 4.0 4.5 5.0 Supply Voltage (V) VOUT(L+) vs. Supply Document Number: 71343 S-40133-Rev. B, 16-Feb-04 5.5 6.0 0.0 4.0 4.5 5.0 5.5 6.0 Supply Voltage (V) VOUT(L-) vs. Supply www.vishay.com 5 Product is End of Life 3/2014 Si9913 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 5 0 See Figure 3 See Figure 3 0.5 A 4 Output Voltage Drop (V) Output Voltage Drop (V) -1 -2 1A -3 2A 1A 0.5 A - 25 0 25 50 75 0 - 50 100 0 25 50 Temperature (°C) VOUT(H+) vs. Temperature VOUT(H-) vs. Temperature 75 100 75 100 2.0 0.5 A See Figure 3 -1 1A Output Voltage Drop (V) Output Voltage Drop (V) - 25 Temperature (°C) 0 -2 1.5 A -3 1.5 2A 1.0 1.5 A 1A 0.5 0.5 A -4 2A -5 - 50 1.5 A 2 1 -4 -5 - 50 3 - 25 0 See Figure 3 25 50 75 100 Temperature (°C) VOUT(L+) vs. Temperature 0.0 - 50 - 25 0 25 50 Temperature (°C) VOUT(L-) vs. Temperature THEORY OF OPERATION Break-Before-Make Function Under Voltage Lockout Function The Si9913 has an internal break-before-make function to ensure that both high-side and low-side MOSFETs are not turned on at the same time. The high-side drive (OUTH) will not turn on until the low-side gate drive voltage (measured at the OUTL pin) is less than VBBM, thus ensuring that the lowside MOSFET is turned off. The low-side drive (OUTL) will not turn on until the voltage at the MOSFET half-bridge output (measured at the VS pin) is less than VBBM, thus ensuring that the high-side MOSFET is turned off. The Si9913 has an internal under-voltage lockout feature to prevent driving the MOSFET gates when the supply voltage (at VDD) is less than the under-voltage lockout specification (VUVL). This prevents the output MOSFETs from being turned on without sufficient gate voltage to ensure they are fully on. There is hysteresis included in this feature to prevent lockout from cycling on and off. www.vishay.com 6 Document Number: 71343 S-40133-Rev. B, 16-Feb-04 Product is End of Life 3/2014 Si9913 Vishay Siliconix time. This is particularly useful for discontinuous operation under light load or pulse skipping mode, where there is a long off time, because it prevents current flowing back from the output to ground during the off time. Bootstrap Supply Operation (see Functional Block Diagram) The power to drive the high-side MOSFET (Q2) gate comes from the bootstrap capacitor (CBOOT). This capacitor charges through D1 during the time when the low-side MOSFET is on (VS is at GND potential ), and then provides the necessary charge to turn on the high-side MOSFET. CBOOT should be sized to be greater than ten times the high-side MOSFET gate capacitance, and large enough to supply the bootstrap current (IBOOT) during the high-side on time, without significant voltage droop. Layout Considerations There are a few critical layout considerations for these parts. Firstly, the IC must be decoupled as closely as possible to the power pins. Secondly the IC should be placed physically close to the high- and low-side MOSFETs it is driving. The major consideration is that the MOSFET gates must be charged or discharged in a few nanoseconds, and the peak current to do this is of the order of 1 A. This current must flow from the decoupling and bootstrap capacitors to the IC, and from the output driver pin to the MOSFET gate, returning from the MOSFET source to the IC. The aim of the layout is to reduce the parasitic inductance of these current paths as much as possible. This is accomplished by making these traces as short as possible, and also running trace and its Synchronous Enable The synchronous enable pin serves to enable and disable the drive to the low-side MOSFET gate. With SYN high, the low-side MOSFET is driven on and off in antiphase with the high-side MOSFET to form a synchronous rectifier. This improves efficiency at high load currents because the flyback current is carried by the MOSFET, thus eliminating the diode drop. With SYN low, the low-side MOSFET is held off all the APPLICATIONS 5 6 7 8 + VDC Q1 4 8 OUTH BOOT 3 6 GND 15 µH 1 µF C5 VDD OUTL 5 C2 0.1 µF RLOAD Q2 4 Si9913 Si4412 1 2 3 SYN C1 0.1 µF 5 6 7 8 7 IN Enable L1 VS 2 4 Si4412 1 2 3 1 GND 15 µF C4 + +5V U1 PWM IN 0.1 µF C3 GND GND Figure 1. Typical Applications Schematic Circuit Used to Obtain Typical Rising and Falling Switching Waveforms Document Number: 71343 S-40133-Rev. B, 16-Feb-04 www.vishay.com 7 Product is End of Life 3/2014 Si9913 Vishay Siliconix +5V +5V U1 U1 1 8 OUTH VS 2 GND PWM IN IN 4 SYN 7 2 6 3 OUTL Si9913 4 5 CLOAD C8 Figure 2. Capacitive Load Test Circuit Used to Measure Rise and Fall Times vs. Capacitance 6 VDD SYN OUTL Si9913 5 ISRC C2 0.1 µF C2 0.1 µF GND BOOT IN Input ISRC 7 GND VDD VS OUTH BOOT 3 8 1 CLOAD C9 GND Figure 3. Load Test Schematic Circuit Used to Measure Driver Output Impedance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71343. www.vishay.com 8 Document Number: 71343 S-40133-Rev. B, 16-Feb-04 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000
SI9913DY-T1-E3 价格&库存

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