Product is End of Life 12/2014
Si9986
Vishay Siliconix
Buffered H-Bridge Driver with Integrate MOSFET
DESCRIPTION
FEATURES
The Si9986 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a
continuous 1 A at VDD = 12 V (room temperature) at
switching rates up to 200 kHz. Internal logic prevents the
upper and lower outputs of either half-bridge from being
turned on simultaneously. Unique input codes allow both
outputs to be forced low (for braking) or forced to a high
impedance level.
•
•
•
•
•
•
1 A H-bridge
200 kHz switching rate
Shoot-through limited
TTL compatible inputs
3.8 V to 13.2 V operating range
Surface mount packaging
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
The Si9986 is available in both standard and lead (Pb)-free,
8-pin SOIC packages, specified to operate over a voltage
range of 3.8 V to 13.2 V, and the commercial temperature
range of 0 °C to 70 °C (C suffix) and the industrial
temperature range of - 40 °C to 85 °C (D suffix).
•
•
•
•
•
•
•
VCM driver
Brushed motor driver
Stepper motor driver
Power converter
Optical disk drives
Power supplies
High performance servo
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
SO-8
SA
1
GND
2
VDD
SB
VDD
(3)
8
OUTA
7
INA
3
6
INB
4
5
OUTB
Si9986
(7)
INA
Top View
Shoot-Through
Protection Logic
TRUTH TABLE
INA
INB
OUTA
OUTB
1
0
1
0
0
1
0
1
0
0
0
0
1
1
HiZ
HiZ
(6)
INB
(2)
GND
PIN DESCRIPTION
Pin
Number
(1)
(8)
SA
(5)
(4)
OUTPUT
A
B
SB
ORDERING INFORMATION
Temperature
Range
Name
Function
Part Number
1
SA
Source of the low-side MOSFET on bridge arm A
Si9986CY-T1
0 °C to 70 °C
2
GND
Ground
Si9986DY-T1
- 40 °C to 85 °C
3
VDD
IC power supply
Si9986CY-T1-E3
0 °C to 70 °C
4
SB
Source of the low-side MOSFET on bridge arm B
Si9986DY-T1-E3
- 40 °C to 85 °C
5
OUTB
Center tap of bridge arm B. Connects to one end
of the load
6
INB
Input signal to control bridge arm B
7
INA
Input signal to control bridge arm A
8
OUTA
Si9986CY
0 °C to 70 °C
Si9986DY
- 40 °C to 85 °C
Package
Tape and reel
Lead (Pb)-free
Tape and reel
Bulk (tubes)
Center tap of bridge arm A. Connects to the other
end of the load
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9986
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Parameter
Limit
Unit
- 0.3 to VDD + 0.3
Voltage on any Pin with Respect to Ground
- 1 to VDD + 1
Voltage on Pins 5, 8 with Respect to Ground
Voltage on Pins 1, 4
V
- 0.3 to GND + 1
Peak Output Current
1.5
Storage Temperature
- 65 to 150
A
°C
Maximum Junction Temperature (TJ)
150
Maximum VDD
15
V
Power Dissipationb
ΘJA
1
W
100
°C/W
Operating Temperature Range
Si9986CY
0 to 70
Si9986DY
- 45 to 85
°C
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
VDD
Maximum Junction Temperature (TJ)
Unit
3.8 to 13.2
V
125
°C
SPECIFICATIONS
Parameter
Input
Input Voltage High
Input Voltage Low
Input Current with Input Voltage High
Input Current with Input Voltage Low
Output
Output Voltage High
Symbol
VINH
VINL
IINH
IINL
VOUTH
Output Voltage Low
VOUTL
Output Leakage Current High
Output Leakage Current Low
Output V Clamp High
Output V Clamp Low
Supply
IOLH
IOLL
VCLH
VCLL
VDD Supply Current
Test Conditions
Unless Otherwise Specified
VDD = 3.8 to 13.2 V
SA at GND, SB at GND
Limits
C Suffix, 0 °C to 70 °C
D Suffix, - 40 °C to 85 °C
Mina
Typb
Maxa
Unit
2
VIN = 2 V
VIN = 0 V
VDD = 10.8 V
VDD = 4.5 V
IOUT = - 300 mA, VDD = 3.8 V
VDD = 10.8 V
IOUT = 500 mA
VDD = 4.5 V
IOUT = 300 mA, VDD = 3.8 V
INA = INB ≥ 2 V, VOUT = VDD = 13.2 V
VOUT = 0, VDD = 13.2 V
IOUT = 100 mA
INA = INB ≥ 2 V
IOUT = - 100 mA
IOUT = - 500 mA
IDD
IN = 100 kHz, VDD = 5 V
INA = INB = 4.5 V, VDD = 5.5 V
TPLH
TPHL
VDD = 5 V
V
1
1
µA
-1
10.5
4.1
3.4
- 10
10.7
4.3
3.7
0.2
0.2
0.1
0
0
VDD + 0.7
- 0.7
V
0.3
0.4
0.4
µA
10
V
2
300
mA
µA
Dynamic
Propogation Delay Time
300
100
nS
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
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Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9986
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
700
15
VDD = 13.2 V
600
12
VOUTL (mV)
VOUTH (V)
500
9
5.5 V
6
3.8 V
5.5 V
400
VDD = 3.8 V
13.2 V
300
200
3
100
0
0.50
0.75
1.00
1.25
0
0.50
1.50
0.75
1.00
1.25
1.50
Output Current (A)
Output Current (A)
Output High Voltage vs. Output Current
Output Low Voltage vs. Output Current
6
140
f = 100 kHz
5
4
100
I DD (mA)
I DD - Standby (µ A)
120
80
3
2
60
1
0
40
4
6
8
10
12
4
14
6
10
12
14
VDD - Supply Voltage (V)
VDD - Supply Voltage (V)
Supply Current vs. Supply Voltage
Supply Current vs. Supply Voltage
8
200
f = 100 kHz
VDD = 13.2 V
180
VDD = 13.2 V
6
I DD (mA)
160
I DD - Standby (µ A)
8
140
120
4
5.5 V
100
2
5.5 V
80
60
- 35
- 20
-5
10
25
40
55
Temperature (°C)
Supply Current vs. Temperature
Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
70
85
0
- 35
- 20
-5
10
25
40
55
70
85
Temperature (°C)
Supply Current vs. Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si9986
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
600
15
500
12
Delay Time (ns)
I DD (mA)
VDD = 13.2 V
9
6
400
300
TPLH
200
5.5 V
3
TPHL
100
3.8 V
0
0
0
50
100
150
200
3
6
9
12
f - Frequency (kHz)
VDD - Supply Voltage (V)
Supply Current vs. Frequency
Propagation Time vs. Supply Voltage
15
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70007.
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Document Number: 70007
S11-0800-Rev. G, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000