SIE844DF-T1-E3

New Product SiE844DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Qg (Typ.) 13.1 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D 1 G 2 S S 3 4 Top View D D 5 5 S 4 G 3 2 • • • • D D VRM, POL DC/DC Conversion Server High-Side Switch G 1 S Bottom View N-Channel MOSFET Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE844DF-T1-E3 (Lead (Pb)-free) SiE844DF-T1-GE3 (Lead (Pb)-free and Halogen-free) For Related Documents www.vishay.com/ppg?69988 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Limit 30 ± 20 44.5 35.6 20.3a, b 16.3a, b 60 20.8 4.3a, b 25 31 25 16 5.2a, b 3.3a, b - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg °C Soldering Recommendations (Peak Temperature)c, d Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Based on TC = 25 °C. Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 New Product SiE844DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC (Drain) RthJC (Source) t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Typical 20 4 5.5 Maximum 24 5 7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 30 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistance a Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 12.1 A VGS = 4.5 V, ID = 9.7 A VDS = 15 V, ID = 12.1 A VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω TC = 25 °C IS ISM Pulse Diode Forward Currenta IS = 10 A VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. V 30 -6 1 mV/°C 3 ± 100 1 10 25 V nA µA A 0.0058 0.0081 65 2150 320 120 29 13.1 6 3.1 1.2 25 10 25 10 10 10 25 10 0.8 30 24 16 14 0.007 0.010 Ω S pF 44 20 1.8 40 15 40 15 15 15 40 15 20.8 60 1.2 45 36 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 New Product SiE844DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 VGS = 10 V thru 4 V TC = - 55 °C 16 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 VGS = 3 V 12 8 TC = 125 °C 4 10 TC = 25 °C VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2500 0.010 Ciss 2000 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.009 0.008 0.007 VGS = 10 V 0.006 1500 1000 Coss 500 0.005 Crss 0.004 0 0 10 20 30 40 50 0 60 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 12.1 A VGS = 10 V, 4.5 V, ID = 12.1 A 1.6 8 VDS = 15 V 6 VDS = 24 V 4 2 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.2 1.0 0.8 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 24 30 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE844DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12.1 A TJ = 150 °C 10 0.015 TJ = 125 °C 0.010 TJ = 25 °C 0.005 TJ = 25 °C 0.000 1 0.0 0.2 0.4 0.6 0.8 0 1.0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 2.0 Power (W) V GS(th) (V) ID = 250 µA 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC BVDSS TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 New Product SiE844DF Vishay Siliconix 50 25 40 20 30 15 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 5 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 New Product SiE844DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69988. www.vishay.com 6 Document Number: 69988 S09-1338-Rev. B, 13-Jul-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000