SIE868DF-T1-GE3

New Product SiE868DF Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC ID (A)a VDS (V) Silicon Limit RDS(on) (Ω) 40 Package Qg (Typ.) Limit 0.0023 at VGS = 10 V 169 60 0.0029 at VGS = 4.5 V 150 60 45 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS • Primary Side Switch • Half Bridge D D S G D D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 Bottom View S N-Channel MOSFET Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE868DF-T1-GE3 (Lead (Pb)-free and Halogen-free) For Related Documents www.vishay.com/ppg?65006 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ID IDM TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS Limit 40 ± 20 169 (Silicon Limit) 60a (Package Limit) 60a 35b, c 34b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 www.vishay.com 1 New Product SiE868DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS = 0 V, ID = 250 µA 40 Gate-Source Threshold Voltage Gate-Source Leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient ID(on) a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Q Body Diode Reverse Recovery Charge rr ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 1.0 VDS = 20 V, VGS = 4.5 V, ID = 20 A VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 6100 700 320 95 45 17 12 1.1 40 165 65 110 15 15 50 10 TC = 25 °C IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2.2 ± 100 1 10 V nA µA A 0.0018 0.0024 105 VDS = 20 V, VGS = 10 V, ID = 20 A VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω mV/°C 25 VDS = 20 V, VGS = 0 V, f = 1 MHz f = 1 MHz V 45 - 5.5 1.6 0.8 50 75 30 20 0.0023 0.0029 Ω S pF 145 65 2.2 60 250 100 165 25 25 75 15 60 100 1.2 75 115 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 20 VGS = 10 V thru 4 V 80 16 ID - Drain Current (A) ID - Drain Current (A) VGS = 3 V 60 40 20 TC = 125 °C 12 8 TC = 25 °C 4 TC = - 55 °C VGS = 2 V 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0030 8000 7000 0.0025 Ciss 6000 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 0.0020 VGS = 10 V 0.0015 0.0010 5000 4000 3000 2000 Coss 0.0005 1000 Crss 0.0000 0 0 20 40 60 80 100 0 5 ID - Drain Current (A) 10 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 ID = 20 A ID = 20 A VGS = 4.5 V 1.8 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 15 VDS = 10 V 6 VDS = 20 V VDS = 32 V 4 1.6 VGS = 10 V 1.4 1.2 1.0 2 0.8 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.008 100 ID = 20 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.007 TJ = 150 °C TJ = 25 °C 10 0.006 0.005 0.004 TJ = 125 °C 0.003 0.002 TJ = 25 °C 0.001 1 0.0 0.000 0.2 0.4 0.6 0.8 0 1.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 µA 30 20 1.2 10 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 BVDSS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 140 120 Power Dissipation (W) ID - Drain Current (A) 160 120 80 Package Limited 100 80 60 40 40 20 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 www.vishay.com 5 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 4. Surface Mounted 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65006. www.vishay.com 6 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M2 M1 M3 D G S 1 2 3 S 4 c D 5 A (Top View) b1 H4 H1 7 S 8 S 9 G b1 H1 10 D K4 6 D θ H3 b2 H2 b3 θ P1 K3 Z P1 T5 θ T3 M3 View A E E1 T2 T4 T1 T3 θ T5 M4 A b4 K4 A1 K3 P1 b4 P1 K2 K1 D1 D 0.26 b5 S 4 b5 S 3 G 2 D 1 b5 View A (Bottom View) 0.13 0.25 DETAIL Z D 5 0.39 A 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 1.08 1.13 1.18 0.043 0.044 0.046 K3 1.37 - - 0.054 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000