SISS27DN-T1-GE3

SiSS27DN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () MAX. ID (A) 0.0056 at VGS = -10 V -50 e 0.0070 at VGS = -6 V -50 e 0.0090 at VGS = -4.5 V -50 e -30 Qg (TYP.) 45 nC • TrenchFET® Power MOSFET • Low thermal resistance PowerPAK® package with small size and low 0.75 mm profile • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8S D D 6 5 D 7 D 8 APPLICATIONS • Notebook computers and mobile computing S - Adaptor switch - Load switch 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S 1 S G - DC/DC converter - Power management D Ordering Information: SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS TC = 70 °C TA = 25 °C Operating Junction and Storage Temperature Range A -47.5 -4 a,b IAS -25 31 mJ 57 PD 36 4.8 a,b W 3 a,b TA = 70 °C Soldering Recommendations (Peak Temperature) c,d -200 EAS TC = 25 °C Maximum Power Dissipation -50 e -23 a,b -18.5 a,b TA = 70 °C Pulsed Drain Current (t = 100 μs) V -50 e TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -50 to 150 260 °C Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. S13-1161-Rev. A, 13-May-13 Document Number: 62847 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS27DN www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a,b Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC t  10 s Steady State TYPICAL 21 1.7 MAXIMUM 26 2.2 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 63 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS = 0 V, ID = - 250 μA -30 - -22 - V VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage VGS(th)/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS -1 -20 - 5.7 0.0046 0.0058 0.0073 52 -2.2 ± 100 -1 -10 0.0056 0.0070 0.0090 - 0.6 - 5250 530 485 92 45 15 16 3 60 45 50 20 16 5 65 10 140 70 6 120 90 100 40 30 10 130 20 - -0.8 30 21 16 14 -50 c -200 -1.2 60 40 - On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current d Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ID(on) RDS(on) gfs Ciss Coss Crss Qg ID = -250 μA VDS = VGS, ID = -250 μA VDS = 0 V, VGS = ± 20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55 °C VDS  -5 V, VGS = -10 V VGS = -10 V, ID = -15 A VGS = -6 V, ID = -10 A VGS = -4.5 V, ID = -5 A VDS = -15 V, ID = -15 A VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -15 V, VGS = -10 V, ID = -20 A Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = -15 V, VGS = -4.5 V, ID = -20 A IS ISM VSD trr Qrr ta tb TC = 25 °C f = 1 MHz VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -10 V, Rg = 1  IF = -10 A IF = -10 A, dI/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A  S pF nC  ns A V ns nC ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. d. t = 100 μs. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1161-Rev. A, 13-May-13 Document Number: 62847 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS27DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 5 V VGS = 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 20 12 TC = 25 °C 8 4 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0120 3.0 3.5 7000 0.0090 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 6000 VGS = 4.5 V VGS = 6 V 0.0060 VGS = 10 V 0.0030 5000 Ciss 4000 3000 2000 Coss 1000 Crss 0.0000 0 0 20 40 60 80 100 0 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 30 1.6 10 ID = 20 A 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VGS = 10 V VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 2 ID = 15 A 1.4 VGS = 6 V 1.2 VGS = 4.5 V 1.0 0.8 0.6 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge S13-1161-Rev. A, 13-May-13 80 100 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62847 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS27DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.020 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 15 A 0.016 TJ = 150 °C 10 1 TJ = 25 °C 0.012 TJ = 125 °C 0.008 TJ = 25 °C 0.004 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 100 1.8 80 Power (W) VGS(th) (V) 1.6 1.4 ID = 250 μA 60 40 1.2 20 1.0 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S13-1161-Rev. A, 13-May-13 Document Number: 62847 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS27DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 100 60 50 60 Power (W) ID - Drain Current (A) 80 Package Limited 40 40 30 20 20 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power, Junction-to-Case  * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1161-Rev. A, 13-May-13 Document Number: 62847 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS27DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.05 t1 t2 2. Per Unit Base = RthJA = 63 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62847. S13-1161-Rev. A, 13-May-13 Document Number: 62847 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S A 0.10 C 2x D 8 7 Z 6 5 D1 5 6 b 4 3 7 8 2 1 K1 E1 E K B L 0.10 C 1 2x 2 3 4 Pin 1 dot e 0.10 M C A B 0.05 M C 0.10 C C A A3 0.08 C A1 A MIN. 0.67 MILLIMETERS NOM. 0.75 MAX. 0.83 MIN. 0.026 INCHES NOM. 0.030 MAX. 0.033 A1 0.00 - 0.05 0.000 - 0.002 DIM. A3 0.20 ref. 0.008 ref b 0.25 0.30 0.35 0.010 0.012 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. 0.026 bsc. K 0.76 ref. 0.030 ref. K1 L 0.41 ref. 0.33 Z 0.43 0.525 ref. 0.014 0.016 ref. 0.53 0.013 0.017 0.021 0.021 ref. ECN: C20-0862-Rev. B, 20-Jul-2020 DWG: 6008 Revision: 20-Jul-2020 Document Number: 63919 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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